专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09653913B2 Resistance change device providing overcurrent protection 有权
公开(公告)号：US09653913B2
公开(公告)日：2017-05-16
申请号：US14624142
申请日：2015-02-17
申请人： LITTELFUSE, INC.
发明人： Gary Mark Bentley
IPC分类号： H02H9/04 , H02H9/02
CPC分类号： H02H9/025 , H02H9/041
摘要： An overcurrent protection device may include an input terminal to receive an input current; an output terminal coupled to the input terminal; and a current limiter circuit integrated into the silicon substrate and arranged between the input terminal and output terminal. The current limiter circuit may include a series pass element having a pass state characterized by a first electrical resistance and a limit state characterized by a second electrical resistance higher than the first electrical resistance, the series pass element comprising a series current sense element integrated into the silicon substrate and configured to receive the input current and to output a sense voltage based upon the received input current, wherein the series pass element is configured to place the current limiter circuit into the limit state when the sense voltage indicates that the input current exceeds a predetermined level.

2. 发明申请

US20160293591A1 TRANSIENT OVERVOLTAGE PROTECTION DEVICE 有权
标题翻译：瞬态过电压保护装置
公开(公告)号：US20160293591A1
公开(公告)日：2016-10-06
申请号：US14678005
申请日：2015-04-03
申请人： LITTELFUSE, INC.
发明人： Gary Mark Bentley , James Allan Peters , Steve Wilton Byatt
IPC分类号： H01L27/02 , H01L29/66
CPC分类号： H01L27/0255 , H01L29/0661 , H01L29/66121 , H01L29/861
摘要： In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100 V when an external voltage is applied between the first surface region and second surface region.
摘要翻译：在一个实施例中，过电压保护装置可以包括包括n型体区域的半导体衬底。过电压保护装置还可以包括设置在半导体衬底的第一表面区域中的第一p型区域，以及与n型体区域形成第一P / N结，以及第二p型区域，所述半导体衬底与所述第一表面相对的第二表面区域，以及与所述n型体区域形成第二P / N结，其中所述n型体区域，第一p型区域和第二p型区域形成当在第一表面区域和第二表面区域之间施加外部电压时，具有大于100V的击穿电压的击穿装置。

3. 发明申请

US20160241023A1 RESISTANCE CHANGE DEVICE PROVIDING OVERCURRENT PROTECTION 有权
标题翻译：提供过流保护的电阻变化器件
公开(公告)号：US20160241023A1
公开(公告)日：2016-08-18
申请号：US14624142
申请日：2015-02-17
申请人： LITTELFUSE, INC.
发明人： Gary Mark Bentley
IPC分类号： H02H9/04
CPC分类号： H02H9/025 , H02H9/041
摘要： An overcurrent protection device may include an input terminal to receive an input current; an output terminal coupled to the input terminal; and a current limiter circuit integrated into the silicon substrate and arranged between the input terminal and output terminal. The current limiter circuit may include a series pass element having a pass state characterized by a first electrical resistance and a limit state characterized by a second electrical resistance higher than the first electrical resistance, the series pass element comprising a series current sense element integrated into the silicon substrate and configured to receive the input current and to output a sense voltage based upon the received input current, wherein the series pass element is configured to place the current limiter circuit into the limit state when the sense voltage indicates that the input current exceeds a predetermined level.
摘要翻译：过电流保护装置可以包括用于接收输入电流的输入端子; 耦合到所述输入端子的输出端子; 以及集成在硅衬底中并设置在输入端子和输出端子之间的限流器电路。电流限制器电路可以包括具有通过状态表征的通过状态的串联通道元件，其特征在于第一电阻和特征在于高于第一电阻的第二电阻的极限状态，串联通过元件包括集成到第一电阻中的串联电流检测元件并且被配置为接收所述输入电流并且基于所接收的输入电流输出感测电压，其中所述串联通过元件被配置为当所述感测电压指示所述输入电流超过所述输入电流时将所述限流器电路置于极限状态预定水平。

4. 发明授权

US09941264B2 Transient overvoltage protection device 有权
公开(公告)号：US09941264B2
公开(公告)日：2018-04-10
申请号：US14678005
申请日：2015-04-03
申请人： LITTELFUSE, INC.
发明人： Gary Mark Bentley , James Allan Peters , Steve Wilton Byatt
IPC分类号： H01L27/02 , H01L29/66 , H01L29/861 , H01L29/06
CPC分类号： H01L27/0255 , H01L29/0661 , H01L29/66121 , H01L29/861
摘要： In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100 V when an external voltage is applied between the first surface region and second surface region.

5. 发明申请

US20170358567A1 TRANSIENT SUPPRESSING CIRCUIT ARRANGEMENTS 审中-公开
公开(公告)号：US20170358567A1
公开(公告)日：2017-12-14
申请号：US15585476
申请日：2017-05-03
申请人： Littelfuse, Inc.
发明人： James Allan Peters , Gary Mark Bentley
IPC分类号： H01L27/02 , H01L29/864 , H01L29/87
CPC分类号： H01L27/0255
摘要： Transient suppression circuit arrangements are disclosed. In one implementation of a transient suppression circuit, at least one avalanche diode is coupled in series with a DIAC, a silicon diode for alternating current (SIDAC) device or SIDACtor.

6. 发明授权

US10325904B2 Transient overvoltage protection device 有权
公开(公告)号：US10325904B2
公开(公告)日：2019-06-18
申请号：US15908903
申请日：2018-03-01
申请人： LITTELFUSE, INC.
发明人： Gary Mark Bentley , James Allan Peters , Steve Wilton Byatt
IPC分类号： H01L27/02 , H01L29/66 , H01L29/861 , H01L29/06
摘要： In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100V when an external voltage is applied between the first surface region and second surface region.

7. 发明申请

US20180190643A1 TRANSIENT OVERVOLTAGE PROTECTION DEVICE 审中-公开
公开(公告)号：US20180190643A1
公开(公告)日：2018-07-05
申请号：US15908903
申请日：2018-03-01
申请人： LITTELFUSE, INC.
发明人： Gary Mark Bentley , James Allan Peters , Steve Wilton Byatt
IPC分类号： H01L27/02 , H01L29/06 , H01L29/66 , H01L29/861
CPC分类号： H01L27/0255 , H01L29/0661 , H01L29/66121 , H01L29/861
摘要： In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100V when an external voltage is applied between the first surface region and second surface region.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式