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    • 2. 发明申请
    • LIGHT-EMITTING ELEMENT AND LIGHTING SYSTEM
    • 发光元件和照明系统
    • US20170025566A1
    • 2017-01-26
    • US15302387
    • 2015-04-07
    • LG INNOTEK CO., LTD.
    • Ki Young SONGHyun Chul LIMMyung Hoon JUNG
    • H01L33/04H01L33/44H01L33/08H01L33/46H01L33/14H01L33/38H01L33/62
    • H01L33/04H01L21/00H01L27/15H01L29/18H01L29/72H01L33/0079H01L33/08H01L33/14H01L33/38H01L33/382H01L33/44H01L33/46H01L33/62
    • An embodiment relates to a light-emitting element, a method for producing same, a light-emitting element package, and a lighting system. A light-emitting element according to the embodiment may comprise: a first conductive semiconductor layer (112); a second conductive semiconductor layer (116) disposed below the first conductive semiconductor layer (112); an active layer (114) disposed between the first conductive semiconductor layer (112) and the second conductive semiconductor layer (116); a plurality of holes (H) exposing parts of the first conductive semiconductor layer (112) to the bottom surface of the second conductive semiconductor layer (116) by penetrating the second conductive semiconductor layer (116) and the active layer (114); first contact electrodes (160) electrically connected to the first conductive semiconductor layer (112) from the bottom surface of the second conductive semiconductor layer (116) through the plurality of holes (H); an insulation layer (140) disposed between the first contact electrode (160) and the plurality of holes (H); a bonding layer (156) electrically connected to the first contact electrodes (160); a support member (158) disposed below the bonding layer (156); a second contact electrode (132) electrically connected to the second conductive semiconductor layer (116); and a first current-spreading semiconductor layer (191) inside the first conductive semiconductor layer (112) above the first contact electrode (160).
    • 实施例涉及发光元件,其制造方法,发光元件封装和照明系统。 根据实施例的发光元件可以包括:第一导电半导体层(112); 设置在所述第一导电半导体层(112)下方的第二导电半导体层(116); 设置在第一导电半导体层(112)和第二导电半导体层(116)之间的有源层(114); 多个孔(H)通过穿透第二导电半导体层(116)和有源层(114)将第一导电半导体层(112)的部分暴露于第二导电半导体层(116)的底表面; 通过所述多个孔(H)从所述第二导电半导体层(116)的底表面电连接到所述第一导电半导体层(112)的第一接触电极(160) 设置在第一接触电极(160)和多个孔(H)之间的绝缘层(140); 电连接到第一接触电极(160)的接合层(156); 设置在所述接合层(156)下方的支撑构件(158); 电连接到第二导电半导体层(116)的第二接触电极(132); 以及在第一接触电极(160)上方的第一导电半导体层(112)内部的第一电流扩展半导体层(191)。