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1. 发明授权

US11239379B2 Solar cell and method for manufacturing the same 有权
公开(公告)号：US11239379B2
公开(公告)日：2022-02-01
申请号：US16456915
申请日：2019-06-28
申请人： LG ELECTRONICS INC.
发明人： Jungmin Ha , Sungjin Kim , Juhwa Cheong , Junyong Ahn , Hyungwook Choi , Wonjae Chang , Jaesung Kim
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/0747 , H01L31/02 , H01L31/0368 , H01L31/077 , H01L31/18
摘要： A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.

2. 发明申请

US20180138345A1 SOLAR CELL 审中-公开
公开(公告)号：US20180138345A1
公开(公告)日：2018-05-17
申请号：US15816692
申请日：2017-11-17
申请人： LG ELECTRONICS INC.
发明人： Jungmin Ha , Seungyoon Lee , Sangwook Park
IPC分类号： H01L31/05 , H01L31/0224
摘要： Provided is a solar cell including: a semiconductor substrate; a conductive area disposed on one surface of the semiconductor substrate; a first electrode line disposed on the conductive area and extending in a first direction; and a second electrode line disposed on the conductive area and extending in a second direction different from the first direction, wherein the first electrode line includes first particles having a spherical shape and a first average diameter, and the second electrode line includes the first particles and second particles, the second particles having a non-spherical shape and a second average diameter.

3. 发明授权

US09029188B2 Solar cell and method for manufacturing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US09029188B2
公开(公告)日：2015-05-12
申请号：US14286806
申请日：2014-05-23
申请人： LG Electronics Inc.
发明人： Jungmin Ha , Junyong Ahn , Jinho Kim
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0216 , H01L31/0352 , H01L31/068
CPC分类号： H01L31/186 , H01L31/02168 , H01L31/022425 , H01L31/03529 , H01L31/068 , H01L31/18 , H01L31/1864 , Y02E10/52 , Y02E10/547
摘要： A method for manufacturing a solar cell is discussed. The method may include injecting first impurity ions at a first surface of a substrate by using a first ion implantation method to form a first impurity region, the substrate having a first conductivity type and the first impurity ions having a second conductivity type, and the first impurity region having the second conductivity type; heating the substrate with the first impurity region to activate the first impurity region to form an emitter region from the first impurity region; etching the emitter region from a surface of the emitter region to a predetermined depth to form an emitter part from the emitter region; and forming a first electrode on the emitter part to connect to the emitter part and a second electrode on a second surface of the substrate to connect to the second surface of the substrate.
摘要翻译：讨论了太阳能电池的制造方法。所述方法可以包括通过使用第一离子注入方法在衬底的第一表面处注入第一杂质离子以形成第一杂质区，所述衬底具有第一导电类型，并且所述第一杂质离子具有第二导电类型，并且所述第一杂质离子具有第二导电类型的杂质区; 用所述第一杂质区域加热所述衬底以激活所述第一杂质区域以从所述第一杂质区域形成发射极区域; 将发射极区域从发射极区域的表面蚀刻到预定深度以从发射极区域形成发射极部分; 以及在所述发射极部分上形成第一电极以连接到所述发射极部分，以及在所述基板的第二表面上连接到所述基板的第二表面的第二电极。

4. 发明授权

US11133426B2 Solar cell and method for manufacturing the same 有权
公开(公告)号：US11133426B2
公开(公告)日：2021-09-28
申请号：US16457129
申请日：2019-06-28
申请人： LG ELECTRONICS INC.
发明人： Jungmin Ha , Sungjin Kim , Juhwa Cheong , Junyong Ahn , Hyungwook Choi , Wonjae Chang , Jaesung Kim
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/0747 , H01L31/02 , H01L31/0368 , H01L31/077 , H01L31/18
摘要： A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.

5. 发明授权

US10510908B2 Solar cell panel 有权
公开(公告)号：US10510908B2
公开(公告)日：2019-12-17
申请号：US15465026
申请日：2017-03-21
申请人： LG ELECTRONICS INC.
发明人： Jinhyung Lee , Jungmin Ha , Sangwook Park
IPC分类号： H01L31/02 , H01L31/0224 , H01L31/048 , H01L31/05 , H01L31/0747 , H01L31/075
摘要： A solar cell panel includes a first solar cell and a second solar cell; and a plurality of leads connecting the first solar cell and the second solar cell. Each of the first solar cell and the second solar cell includes: a first electrode including a plurality of finger lines in a first direction and a plurality of first bus bars in a second direction crossing the first direction; and a second electrode including a plurality of second bus bars in the second direction. The plurality of leads have a diameter or width of 100 to 500 μm, and include 6 or more leads arranged at one surface side of the first or second solar cell. The plurality of leads are connected to the plurality of first bus bars of the first solar cell and the plurality of second bus bars of the second solar cell by a solder layer, respectively.

6. 发明授权

US10230009B2 Solar cell and method for manufacturing the same 有权
公开(公告)号：US10230009B2
公开(公告)日：2019-03-12
申请号：US15995701
申请日：2018-06-01
申请人： LG ELECTRONICS INC.
发明人： Jungmin Ha , Sungjin Kim , Juhwa Cheong , Junyong Ahn , Hyungwook Choi , Wonjae Chang , Jaesung Kim
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/0747 , H01L31/02 , H01L31/0368 , H01L31/077 , H01L31/18
摘要： A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.

7. 发明授权

US09853178B2 Selective emitter solar cell 有权
公开(公告)号：US09853178B2
公开(公告)日：2017-12-26
申请号：US14788057
申请日：2015-06-30
申请人： LG ELECTRONICS INC.
发明人： Jungmin Ha , Junyong Ahn , Jinho Kim
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/022425 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A manufacturing method of selective emitter solar cell can include, forming an emitter layer positioned on a light receiving surface of the substrate having a first conductive type, the emitter layer having a second conductive type opposite to the first conductive type, forming a first emitter portion having a first impurity concentration and a second emitter portion having a second impurity concentration higher than the first impurity concentration on the emitter layer using a etch stop mask or a mask pattern, and forming a plurality of first electrodes connected to the second emitter portion, wherein the second emitter portion includes a first region that contacts the first electrodes and overlaps the first electrodes and a second region that is positioned around the first region and does not overlap the first electrodes, and the line width of the second region is more than the line width of each first electrode and less than four times the line width of each first electrode.

8. 发明授权

US11056598B2 Solar cell 有权
公开(公告)号：US11056598B2
公开(公告)日：2021-07-06
申请号：US16388491
申请日：2019-04-18
申请人： LG ELECTRONICS INC.
发明人： Jungmin Ha , Youngho Choe , Changseo Park
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/068 , H01L31/0236
摘要： A bifacial solar cell includes a substrate formed of a silicon wafer having an n-type conductivity; an emitter region positioned on a front surface of the substrate and having a p-type conductivity; a front negative fixed charge layer on the emitter region, and a front positive fixed charge layer on the front negative fixed charge; a plurality of first front electrodes extending in a first direction and connected to the emitter region through the front negative fixed charge layer and the front positive fixed charge layer; a plurality of second front electrodes extending in a second direction crossing the first direction and electrically and physically connected to the plurality of first front electrodes; a back aluminum oxide layer and a back silicon nitride layer on a back surface of the substrate; a plurality of back surface field regions extending in the first direction and locally positioned on the back surface of the substrate; a plurality of first back electrodes extending in the first direction and directly positioned on the plurality of back surface field regions through the back aluminum oxide layer and the back silicon nitride layer; and a plurality of second back electrodes extending in the second direction and electrically and physically connected to the plurality of first back electrodes, wherein the front negative fixed charge layer and the back aluminum oxide layer have the same thickness.

9. 发明授权

US10439087B2 Solar cell 有权
公开(公告)号：US10439087B2
公开(公告)日：2019-10-08
申请号：US15816692
申请日：2017-11-17
申请人： LG ELECTRONICS INC.
发明人： Jungmin Ha , Seungyoon Lee , Sangwook Park
IPC分类号： H01L31/05 , H01L31/0224 , H01L31/0747
摘要： Provided is a solar cell including: a semiconductor substrate; a conductive area disposed on one surface of the semiconductor substrate; a first electrode line disposed on the conductive area and extending in a first direction; and a second electrode line disposed on the conductive area and extending in a second direction different from the first direction, wherein the first electrode line includes first particles having a spherical shape and a first average diameter, and the second electrode line includes the first particles and second particles, the second particles having a non-spherical shape and a second average diameter.

10. 发明授权

US10355158B2 Solar cell and method for manufacturing the same 有权
公开(公告)号：US10355158B2
公开(公告)日：2019-07-16
申请号：US13647920
申请日：2012-10-09
申请人： LG Electronics, Inc.
发明人： Jungmin Ha , Youngho Choe , Philwon Yoon
IPC分类号： H01L31/18 , H01L31/068
摘要： A method of manufacturing a solar cell according to an embodiment includes the steps of: forming an emitter layer by ion-implanting a first conductive type dopant to a first surface of a semiconductor substrate; and forming a back surface field layer by ion-implanting a second conductive type dopant to a second surface of the semiconductor substrate. When an additional dopant is a dopant other than the first and second conductive type dopants, an amount of the additional dopant doped during the forming the back surface field layer is larger than an amount of the additional dopant doped during the forming the emitter layer.

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