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1. 发明申请

US20180138324A1 SOLAR CELL AND SOLAR CELL PANEL INCLUDING THE SAME 审中-公开
公开(公告)号：US20180138324A1
公开(公告)日：2018-05-17
申请号：US15805804
申请日：2017-11-07
申请人： LG ELECTRONICS INC.
发明人： Yongduk JIN , Sungyong CHO , Kyungjin SHIM
IPC分类号： H01L31/02 , H01L31/0224 , H01L31/049 , H01L31/05
CPC分类号： H01L31/0201 , H01L31/022433 , H01L31/049 , H01L31/0508 , Y02E10/50
摘要： A solar cell is disclosed. The solar cell includes a semiconductor substrate having a chamfer formed at an edge thereof and an electrode electrically connected to the semiconductor substrate through a conductivity type region. The electrode includes a plurality of finger lines extending in a first direction, and a plurality of bus bars positioned in a second direction and connecting the plurality of finger lines. The plurality of bus bars include a pair of first bus bars respectively positioned at opposite ends of the semiconductor substrate and separated in the first direction by a first width greater than a width of the chamfer, and a second bus bar positioned between the pair of first bus bars. The plurality of finger lines positioned in a first area between one end of the semiconductor substrate and one of the pair of first bus bars have different shapes from the plurality of finger lines positioned in a second area between the pair of first bus bars.

2. 发明申请

US20130344647A1 METHOD FOR MANUFACTURING SOLAR CELL AND DOPANT LAYER THEREOF 有权
标题翻译：制造太阳能电池及其掺杂层的方法
公开(公告)号：US20130344647A1
公开(公告)日：2013-12-26
申请号：US13840618
申请日：2013-03-15
申请人： LG ELECTRONICS INC.
发明人： Juhwa CHEONG , Yongduk JIN , Youngsung YANG , Manhyo HA
IPC分类号： H01L31/18
CPC分类号： H01L31/1864 , H01L31/02168 , H01L31/022441 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a dopant layer of a solar cell according to an embodiment of the invention includes: ion-implanting a dopant to a substrate; and heat-treating for an activation of the dopant. In the heat-treating for the activation, the substrate is heat-treated at a first temperature after an anti-out-diffusion film is formed at a temperature lower than the first temperature under a first gas atmosphere.
摘要翻译：根据本发明实施例的用于制造太阳能电池的掺杂剂层的方法包括：将掺杂剂离子注入基板; 和用于激活掺杂剂的热处理。在激活的热处理中，在第一气体气氛下，在比第一温度低的温度下形成防扩散膜之后，在第一温度下对基板进行热处理。

3. 发明申请

US20130298975A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20130298975A1
公开(公告)日：2013-11-14
申请号：US13644287
申请日：2012-10-04
申请人： LG ELECTRONICS INC.
发明人： Youngsung YANG , Yongduk JIN , Manhyo HA , Juhwa CHEONG
IPC分类号： H01L31/0352 , H01L31/20
CPC分类号： H01L31/022425 , H01L31/0684 , H01L31/1804 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A solar cell according to an embodiment includes a semiconductor substrate; a first dopant layer formed at one surface of the semiconductor substrate; and a first electrode electrically connected to the first dopant layer. At least a part of the first dopant layer includes a pre-amorphization element, and a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.
摘要翻译：根据实施例的太阳能电池包括半导体衬底; 形成在所述半导体衬底的一个表面处的第一掺杂剂层; 以及电连接到第一掺杂剂层的第一电极。第一掺杂剂层的至少一部分包括预非晶化元件，并且第一掺杂剂层的一部分中的非淀粉化元素的浓度不同于第一掺杂剂层的另一部分中的预非晶化元素的浓度掺杂剂层。

4. 发明申请

US20190198685A1 SOLAR CELL 审中-公开
公开(公告)号：US20190198685A1
公开(公告)日：2019-06-27
申请号：US16290233
申请日：2019-03-01
申请人： LG ELECTRONICS INC.
发明人： Juhwa CHEONG , Yiyin YU , Youngsung YANG , Yongduk JIN , Manhyo HA , Seongeun LEE
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/02
CPC分类号： H01L31/02167 , H01L31/02008 , H01L31/02168 , H01L31/022425 , H01L31/022433 , Y02E10/50
摘要： A solar cell can include a front passivation region including a plurality of layers formed of different materials from each other and including a first aluminum oxide layer and a first silicon nitride layer, and a back passivation region including a plurality of layers formed of different materials from each other and including a second aluminum oxide layer and a second silicon nitride layer, wherein a thickness of a first silicon nitride layer is greater than a thickness of the first aluminum oxide layer, and a thickness of a second silicon nitride layer is greater than a thickness of the second aluminum oxide layer.

5. 发明申请

US20170047456A1 SOLAR CELL 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20170047456A1
公开(公告)日：2017-02-16
申请号：US15334611
申请日：2016-10-26
申请人： LG ELECTRONICS INC.
发明人： Juhwa CHEONG , Yiyin YU , Youngsung YANG , Yongduk JIN , Manhyo HA , Seongeun LEE
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/02
CPC分类号： H01L31/02167 , H01L31/02008 , H01L31/02168 , H01L31/022425 , H01L31/022433 , Y02E10/50
摘要： A solar cell can include a substrate of a first conductive type; an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type; a back surface field region which is positioned at a back surface opposite the front surface of the substrate; a front passivation region including a plurality of layers which are sequentially positioned on the emitter region; a back passivation region including a plurality of layers which are sequentially positioned on the back surface field region; a front electrode part which passes through the front passivation region and is connected to the emitter region, wherein the front electrode part comprises a plurality of front electrodes that are apart from each other and a front bus bar connecting the plurality of front electrodes; a back electrode part which passes through the back passivation region and is connected to the back surface field region, wherein the back electrode part comprises a plurality of back electrodes that are apart from each other and a back bus bar connecting the plurality of back electrodes, wherein the front passivation region includes a first aluminum oxide layer and the back passivation region includes a second aluminum oxide layer.
摘要翻译：太阳能电池可以包括第一导电类型的衬底; 位于所述基板的前表面并具有不同于所述第一导电类型的第二导电类型的发射极区域; 位于与所述基板的前表面相对的后表面的背面场区域; 包括依次位于发射极区域上的多个层的前钝化区域; 包括依次位于所述背面场区域上的多个层的背面钝化区域; 前电极部分，其穿过前钝化区域并连接到发射极区域，其中前电极部分包括彼此分开的多个前电极和连接多个前电极的前汇流条; 背面电极部分，其穿过所述背部钝化区域并连接到所述背面场区域，其中所述背面电极部分包括彼此分开的多个背部电极和连接所述多个背面电极的后部母线，其中所述前钝化区包括第一氧化铝层，所述后钝化区包括第二氧化铝层。

6. 发明申请

US20160380130A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20160380130A1
公开(公告)日：2016-12-29
申请号：US15259356
申请日：2016-09-08
申请人： LG ELECTRONICS INC.
发明人： Youngsung YANG , Yongduk JIN , Manhyo HA , Juhwa CHEONG
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/0684 , H01L31/1804 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell, the method including: preparing a semiconductor substrate; ion-implanting a pre-amorphization element to form an amorphous layer at at least a part of one surface of the semiconductor substrate; ion-implanting a first conductive type dopant to the one surface of the semiconductor substrate to form a first dopant layer; and forming a first electrode electrically connected to the first dopant layer, wherein a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.
摘要翻译：一种制造太阳能电池的方法，所述方法包括：制备半导体衬底; 离子注入预非晶化元件以在半导体衬底的一个表面的至少一部分上形成非晶层; 将第一导电型掺杂剂离子注入到半导体衬底的一个表面以形成第一掺杂剂层; 以及形成与所述第一掺杂剂层电连接的第一电极，其中所述第一掺杂剂层的一部分中的所述预非晶化元素的浓度不同于所述第一掺杂剂层的另一部分中的所述预非晶化元素的浓度。

7. 发明申请

US20160111560A1 SOLAR CELL 审中-公开
公开(公告)号：US20160111560A1
公开(公告)日：2016-04-21
申请号：US14974407
申请日：2015-12-18
申请人： LG ELECTRONICS INC.
发明人： Juhwa CHEONG , Yiyin YU , Youngsung YANG , Yongduk JIN , Manhyo HA , Seongeun LEE
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/02
CPC分类号： H01L31/02167 , H01L31/02008 , H01L31/022425 , H01L31/022433 , Y02E10/50
摘要： A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type, a front passivation region including a plurality of layers which are sequentially positioned on the emitter region, a back passivation region which is positioned on a back surface opposite the front surface of the substrate and includes three layers, a plurality of front electrodes which pass through the front passivation region and are connected to the emitter region, and at least one back electrode which passes through the back passivation region and is connected to the substrate.

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