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1. 发明申请

US20220238731A1 SOLAR CELL AND SOLAR CELL PANEL INCLUDING SAME 有权
公开(公告)号：US20220238731A1
公开(公告)日：2022-07-28
申请号：US17615167
申请日：2020-04-08
申请人： LG ELECTRONICS INC.
发明人： Jungmin HA , Juhwa CHEONG , Youngsung YANG , Kyungdong LEE
IPC分类号： H01L31/02 , H01L31/0216 , H01L31/0236 , H01L31/048 , H01L31/05 , H01L31/18
摘要： The present disclosure relates to a solar cell and a solar cell panel including the same, and more particularly, to a solar cell with an improved structure and an improved manufacturing process and a solar cell panel including the same.

2. 发明申请

US20190326456A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20190326456A1
公开(公告)日：2019-10-24
申请号：US16457129
申请日：2019-06-28
申请人： LG ELECTRONICS INC.
发明人： Jungmin HA , Sungjin KIM , Juhwa CHEONG , Junyong AHN , Hyungwook CHOI , Wonjae CHANG , Jaesung KIM
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/0747 , H01L31/077 , H01L31/02 , H01L31/0368 , H01L31/0216
摘要： A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.

3. 发明申请

US20190148573A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20190148573A1
公开(公告)日：2019-05-16
申请号：US16250463
申请日：2019-01-17
申请人： LG ELECTRONICS INC.
发明人： Jungmin HA , Sungjin KIM , Juhwa CHEONG , Junyong AHN , Hyungwook CHOI , Wonjae CHANG , Jaesung KIM
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/0216 , H01L31/0368 , H01L31/077 , H01L31/02 , H01L31/0747
摘要： A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

4. 发明申请

US20170309761A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20170309761A1
公开(公告)日：2017-10-26
申请号：US15643180
申请日：2017-07-06
申请人： LG ELECTRONICS INC.
发明人： Jungmin HA , Sungjin KIM , Juhwa CHEONG , Junyong AHN , Hyungwook CHOI , Wonjae CHANG , Jaesung KIM
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/0216 , H01L31/02 , H01L31/0368 , H01L31/0747 , H01L31/077
CPC分类号： H01L31/022433 , H01L31/0201 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/03685 , H01L31/0747 , H01L31/077 , H01L31/1824 , H01L31/1864 , H01L31/1868 , Y02E10/50
摘要： A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a first conductive type semiconductor region forming step of forming a first conductive type semiconductor region on the first surface of the semiconductor substrate, a second conductive type semiconductor region forming step of forming a second conductive type semiconductor region by doping impurities of a second conductive type into a second surface of the semiconductor substrate, a first passivation film forming step of forming a first passivation film on the first conductive type semiconductor region and an electrode forming step of forming a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region.

5. 发明申请

US20230083580A1 SOLAR BATTERY, AND SOLAR BATTERY PANEL AND METHOD FOR MANUFACTURING SAME 有权
公开(公告)号：US20230083580A1
公开(公告)日：2023-03-16
申请号：US17799765
申请日：2020-11-27
申请人： LG ELECTRONICS INC.
发明人： Jungmin HA , Juhwa JUNG , Youngsung YANG , Kyungdong LEE
IPC分类号： H01L31/05 , H01L31/18
摘要： A solar battery according to the present embodiment has an electrode, which includes a metal and an adhesive material, formed in a conductive region including a polycrystalline semiconductor layer, and thus, the electrical characteristics of the solar battery may be improved and the manufacturing process thereof may be simplified. More specifically, the solar battery includes a semiconductor substrate, and the conductive region including the polycrystalline semiconductor layer is positioned on one surface of the semiconductor substrate.

6. 发明申请

US20180277694A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180277694A1
公开(公告)日：2018-09-27
申请号：US15995701
申请日：2018-06-01
申请人： LG ELECTRONICS INC.
发明人： Jungmin HA , Sungjin KIM , Juhwa CHEONG , Junyong AHN , Hyungwook CHOI , Wonjae CHANG , Jaesung KIM
IPC分类号： H01L31/0224 , H01L31/0747 , H01L31/18 , H01L31/077 , H01L31/02 , H01L31/0368 , H01L31/0216
CPC分类号： H01L31/022433 , H01L31/0201 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/03685 , H01L31/0747 , H01L31/077 , H01L31/1824 , H01L31/1864 , H01L31/1868 , Y02E10/50
摘要： A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.

7. 发明申请

US20190319140A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20190319140A1
公开(公告)日：2019-10-17
申请号：US16456915
申请日：2019-06-28
申请人： LG ELECTRONICS INC.
发明人： Jungmin HA , Sungjin KIM , Juhwa CHEONG , Junyong AHN , Hyungwook CHOI , Wonjae CHANG , Jaesung KIM
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/0747 , H01L31/077 , H01L31/02 , H01L31/0368 , H01L31/0216
摘要： A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.

8. 发明申请

US20180145196A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180145196A1
公开(公告)日：2018-05-24
申请号：US15821026
申请日：2017-11-22
申请人： LG Electronics Inc.
发明人： Jungmin HA , Sungyeon CHO , Sangwook PARK
IPC分类号： H01L31/048 , H01L31/0236 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/048 , H01L31/022425 , H01L31/02363 , H01L31/0352 , H01L31/03685 , H01L31/0747 , H01L31/1824 , H01L31/1868 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Disclosed is a solar cell including a semiconductor substrate having a first surface and a second surface that is opposite the first surface, each of which includes a first edge area, a second edge area, and a cell area located between the first and second edge areas, a first passivation layer formed on the cell area of the first surface of the semiconductor substrate, a first conductive semiconductor layer disposed on the first passivation layer, and a first electrode disposed on the first conductive semiconductor layer. The first edge area of the first surface of the semiconductor substrate is exposed.

9. 发明申请

US20140256084A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20140256084A1
公开(公告)日：2014-09-11
申请号：US14286806
申请日：2014-05-23
申请人： LG ELECTRONICS INC.
发明人： Jungmin HA , Junyong AHN , Jinho KIM
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/186 , H01L31/02168 , H01L31/022425 , H01L31/03529 , H01L31/068 , H01L31/18 , H01L31/1864 , Y02E10/52 , Y02E10/547
摘要： A method for manufacturing a solar cell is discussed. The method may include injecting first impurity ions at a first surface of a substrate by using a first ion implantation method to form a first impurity region, the substrate having a first conductivity type and the first impurity ions having a second conductivity type, and the first impurity region having the second conductivity type; heating the substrate with the first impurity region to activate the first impurity region to form an emitter region from the first impurity region; etching the emitter region from a surface of the emitter region to a predetermined depth to form an emitter part from the emitter region; and forming a first electrode on the emitter part to connect to the emitter part and a second electrode on a second surface of the substrate to connect to the second surface of the substrate.
摘要翻译：讨论了太阳能电池的制造方法。所述方法可以包括通过使用第一离子注入方法在衬底的第一表面处注入第一杂质离子以形成第一杂质区，所述衬底具有第一导电类型，并且所述第一杂质离子具有第二导电类型，并且所述第一杂质离子具有第二导电类型的杂质区; 用所述第一杂质区域加热所述衬底以激活所述第一杂质区域以从所述第一杂质区域形成发射极区域; 将发射极区域从发射极区域的表面蚀刻到预定深度以从发射极区域形成发射极部分; 以及在所述发射极部分上形成第一电极以连接到所述发射极部分，以及在所述基板的第二表面上连接到所述基板的第二表面的第二电极。

10. 发明申请

US20220223748A1 SOLAR CELL PANEL MANUFACTURING METHOD AND PASTE FOR SOLAR CELL ELECTRODE USED THEREFOR 有权
公开(公告)号：US20220223748A1
公开(公告)日：2022-07-14
申请号：US17612023
申请日：2020-04-08
申请人： LG ELECTRONICS INC.
发明人： Kyungdong LEE , Jungmin HA , Youngsung YANG , Juhwa CHEONG
IPC分类号： H01L31/02 , H01L31/0216 , H01L31/0236 , H01L31/048 , H01L31/05 , H01L31/18 , B23K1/00 , B23K35/02 , B23K35/26 , B23K35/36
摘要： In a method for manufacturing a solar cell panel according to an embodiment of the present invention, a step of forming an electrode comprises the steps of: forming a main electrode part on a conductive region; and forming a connection electrode part on the main electrode part by using a paste comprising metal particles having a first metal, a solder material having a second metal different from the first metal, and an adhesive material.

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