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    • 1. 发明授权
    • Method of forming double junction region and method of forming transfer transistor using the same
    • 形成双结区域的方法和使用其形成转移晶体管的方法
    • US06660604B1
    • 2003-12-09
    • US10314442
    • 2002-12-09
    • Kyung Pil HwangSeoung Ouk Choi
    • Kyung Pil HwangSeoung Ouk Choi
    • H01L21336
    • H01L21/26513H01L21/28512H01L21/324H01L21/76802H01L27/115
    • The present invention relates to a method of forming a dual junction region and a method of forming a transfer transistor using the same. A low-concentration junction region is formed. A high-concentration junction region is formed at a portion of the low-concentration junction region by performing a high-concentration ion implantation process an ion implantation mask for an interlayer dielectric film in which a contact hole is formed so that the portion of the low-concentration junction region is exposed. With this structure, the distance between the high-concentration junction region and the well is sufficiently secured by controlling the distance between the high-concentration junction region and the well using the width of the contact hole formed in the interlayer dielectric film. Therefore, a stable characteristic can be secured upon application of a subsequent high voltage bias.
    • 本发明涉及形成双结区域的方法和使用其形成转移晶体管的方法。 形成低浓度结区。 通过对其中形成有接触孔的层间电介质膜的离子注入掩模进行高浓度离子注入处理,在低浓度结区的一部分处形成高浓度结区, - 浓度接合区域被暴露。 利用这种结构,通过使用在层间电介质膜中形成的接触孔的宽度来控制高浓度接合区域和阱之间的距离,可以充分确保高浓度接合区域与阱之间的距离。 因此,在施加随后的高电压偏压时可以确保稳定的特性。