专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130122640A1 HIGH-DENSITY P-DOPED QUANTUM DOT SOLAR CELL OBTAINED BY THE ACTIVE DOPING OF INP AND A PRODUCTION METHOD THEREFOR 有权
标题翻译：通过INP的活性掺杂获得的高密度P掺杂量子级太阳能电池及其生产方法
公开(公告)号：US20130122640A1
公开(公告)日：2013-05-16
申请号：US13806313
申请日：2010-07-02
申请人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
发明人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
IPC分类号： H01L31/18
CPC分类号： H01L31/1864 , H01L31/03042 , H01L31/035218 , H01L31/06 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： Provided is a manufacturing method of a semiconductor quantum dot-sensitized solar cell. More particularly, the manufacturing method according to the present invention includes: a quantum dot forming step of forming a semiconductor layer containing a group 4 element and InP on a substrate and then performing heat-treatment on the substrate including the semiconductor layer formed thereon to remove indium (In) therefrom, thereby forming an n-type semiconductor quantum dot, which is a group 4 element quantum dot doped with phosphorus (P).
摘要翻译：提供一种半导体量子点敏化太阳能电池的制造方法。更具体地说，根据本发明的制造方法包括：量子点形成步骤，在衬底上形成含有第4族元素和InP的半导体层，然后在其上形成有半导体层的衬底上进行热处理以去除铟（In），由此形成掺杂磷（P）的4族元素量子点的n型半导体量子点。

2. 发明授权

US08865513B2 High-density P-doped quantum dot solar cell obtained by the active doping of InP and a production method therefor 有权
标题翻译：通过InP的有源掺杂获得的高密度P掺杂量子点太阳能电池及其制备方法
公开(公告)号：US08865513B2
公开(公告)日：2014-10-21
申请号：US13806313
申请日：2010-07-02
申请人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
发明人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0304 , H01L31/0352 , H01L31/06
CPC分类号： H01L31/1864 , H01L31/03042 , H01L31/035218 , H01L31/06 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： Provided is a manufacturing method of a semiconductor quantum dot-sensitized solar cell. More particularly, the manufacturing method according to the present invention includes: a quantum dot forming step of forming a semiconductor layer containing a group 4 element and InP on a substrate and then performing heat-treatment on the substrate including the semiconductor layer formed thereon to remove indium (In) therefrom, thereby forming an n-type semiconductor quantum dot, which is a group 4 element quantum dot doped with phosphorus (P).
摘要翻译：提供一种半导体量子点敏化太阳能电池的制造方法。更具体地说，根据本发明的制造方法包括：量子点形成步骤，在衬底上形成含有第4族元素和InP的半导体层，然后在其上形成有半导体层的衬底上进行热处理以去除铟（In），由此形成掺杂磷（P）的4族元素量子点的n型半导体量子点。

3. 发明申请

US20110146775A1 Quantum Dot Photovoltaic Device and Manufacturing Method Thereof 有权
标题翻译：量子点光伏器件及其制造方法
公开(公告)号：US20110146775A1
公开(公告)日：2011-06-23
申请号：US13061297
申请日：2009-08-28
申请人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
发明人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035218 , H01L31/18
摘要： The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.
摘要翻译：本发明提供一种基于半导体的光电器件及其制造方法。基于半导体的光电器件能够吸收宽带波长的光，并且由于具有高的电子 - 空穴对分离效率，因此光电转换效率高。更具体地说，制造光伏器件的方法包括以下步骤：a）在p型或n型半导体衬底上形成薄的半导体量子点膜，其中薄的半导体量子点膜包括介质内的半导体量子点，与半导体衬底掺杂相同类型的杂质; b）通过部分蚀刻形成孔阵列，其中孔阵列穿透薄的半导体量子点膜; c）在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂了杂质的半导体; 以及d）在所述半导体上顺序形成透明导电膜和上电极，其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。

4. 发明授权

US08603849B2 Quantum dot photovoltaic device and manufacturing method thereof 有权
标题翻译：量子点光电器件及其制造方法
公开(公告)号：US08603849B2
公开(公告)日：2013-12-10
申请号：US13061297
申请日：2009-08-28
申请人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
发明人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
IPC分类号： H01L31/0264
CPC分类号： H01L31/035218 , H01L31/18
摘要： The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.
摘要翻译：本发明提供一种基于半导体的光电器件及其制造方法。基于半导体的光电器件能够吸收宽带波长的光，并且由于具有高的电子 - 空穴对分离效率，因此光电转换效率高。更具体地说，制造光伏器件的方法包括以下步骤：a）在p型或n型半导体衬底上形成薄的半导体量子点膜，其中薄的半导体量子点膜包括介质内的半导体量子点，与半导体衬底掺杂相同类型的杂质; b）通过部分蚀刻形成孔阵列，其中孔阵列穿透薄的半导体量子点膜; c）在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂杂质的半导体; 以及d）在所述半导体上顺序形成透明导电膜和上电极，其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。

5. 发明申请

US20110146774A1 Solar Cell Having Quantum Dot Nanowire Array and the Fabrication Method Thereof 审中-公开
标题翻译：具有量子点纳米线阵列的太阳能电池及其制造方法
公开(公告)号：US20110146774A1
公开(公告)日：2011-06-23
申请号：US13058302
申请日：2008-11-10
申请人： Kyung Joong Kim , Woo Lee
发明人： Kyung Joong Kim , Woo Lee
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035272 , H01L27/1446 , H01L31/028 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to a solar cell having quantum dot nanowire array and the fabrication method thereof. The solar cell according to the present invention includes quantum dot nanowire array with a heterostructure including matrix and semiconductor quantum dots, and p-type and n-type semiconductor and electrodes each contacting the quantum dot nanowires. With the solar cell according to the present invention, the band gap energy of the semiconductor quantum dot can be easily controlled, the semiconductor quantum dots having different sizes are provided in the quantum dot nanowire so that the photoelectric conversion can be performed in the wide spectrum from visible rays to infrared rays, the quantum dot is embedded in the high density quantum dot nanowire array so that light absorption can be maximized, and the quantum dot nanowire contact p-type and n-type semiconductor over a wide area, conduction efficiency of electrons and holes can be improved.
摘要翻译：本发明涉及具有量子点纳米线阵列的太阳能电池及其制造方法。根据本发明的太阳能电池包括具有包括矩阵和半导体量子点的异质结构的量子点纳米线阵列，以及每个接触量子点纳米线的p型和n型半导体和电极。利用根据本发明的太阳能电池，可以容易地控制半导体量子点的带隙能量，在量子点纳米线中设置具有不同尺寸的半导体量子点，从而可以在宽光谱中进行光电转换从可见光到红外线，量子点嵌入到高密度量子点纳米线阵列中，使得光吸收最大化，量子点纳米线在大面积上接触p型和n型半导体，传导效率可以改善电子和空穴。

6. 发明申请

US20070198490A1 Method and system for selecting information of advertiser in internet search engine in response to search-ordering of partner-site 有权
标题翻译：方法和系统，用于根据合作伙伴网站的搜索排序选择互联网搜索引擎中广告客户的信息
公开(公告)号：US20070198490A1
公开(公告)日：2007-08-23
申请号：US11573395
申请日：2005-08-31
申请人： Woo Lee
发明人： Woo Lee
IPC分类号： G06F17/30
CPC分类号： G06Q30/02
摘要： A keyword advertising service method for providing search information in response to a search request, the method includes the steps of: maintaining a search information database for storing at least one search information record; receiving a search request packet including a keyword inputted in a partner site selected by a user and a site identifier for identifying the partner site, from the partner site; extracting, in response to the search request packet, at least one search information record including a keyword corresponding to the keyword included in the search request packet, from the search information database, by using the bidding participation fee; rolling the extracted search information records independently from the bidding participation fee to be displayed on a result list field and providing the result list field to the partner site in response to the search request; and charging an advertiser corresponding to the search information record, in the case the user clicks the search information record in the search result field.
摘要翻译：一种用于响应于搜索请求提供搜索信息的关键字广告服务方法，所述方法包括以下步骤：维护用于存储至少一个搜索信息记录的搜索信息数据库; 从所述伙伴站点接收包括在由用户选择的合作伙伴站点中输入的关键字的搜索请求分组和用于识别所述对方站点的站点标识符; 通过使用投标参与费，从搜索信息数据库中提取响应于搜索请求分组的至少一个搜索信息记录，其包括与包括在搜索请求分组中的关键字相对应的关键字的搜索信息记录; 将所提取的搜索信息记录独立于投标参与费用滚动以显示在结果列表字段上，并且响应于搜索请求将结果列表字段提供给合作伙伴站点; 并且在用户在搜索结果字段中单击搜索信息记录的情况下，对与搜索信息记录相对应的广告商进行计费。

7. 发明申请

US20070183788A1 Feed-forward current injection circuits and semiconductor optical amplifier structures for downstream optical signal reuse method 有权
标题翻译：前馈电流注入电路和下游光信号复用方法的半导体光放大器结构
公开(公告)号：US20070183788A1
公开(公告)日：2007-08-09
申请号：US11651262
申请日：2007-01-09
申请人： Byoung Kim , Mahn Park , Seung Cho , Woo Lee , Jie Lee , Geon Jeong , Chul Kim
发明人： Byoung Kim , Mahn Park , Seung Cho , Woo Lee , Jie Lee , Geon Jeong , Chul Kim
IPC分类号： H04B10/00
CPC分类号： H01S5/50 , H01S5/06812 , H04J14/02 , H04J14/0282
摘要： A reflective semiconductor optical amplifier (RSOA) and an operating system based on a downstream optical signal reuse method with feed-forward current injection are provided. The RSOA has two active regions and includes a reflecting plane that reflects an input optical signal; and an optical amplifying semiconductor including a rear portion, which is positioned at a side of the reflecting plane and to which a signal having polarity opposite to that of the input optical signal is injected, and a front portion, which is positioned at a side opposite to the side of the rear portion facing the reflecting plane and which the input optical signal is passed though and a signal used to modulate a reflected input optical signal from the reflecting plane to an output optical signal is injected into.
摘要翻译：提供反射半导体光放大器（RSOA）和基于具有前馈电流注入的下行光信号重用方法的操作系统。 RSOA具有两个有效区域，并且包括反射输入光信号的反射平面; 以及光学放大半导体，其包括位于反射面的一侧并且具有与输入光信号的极性相反的信号的后部的后部，以及位于相反侧的一侧的前部到后面的面向反射面的一侧，并且输入光信号通过，并且将用于将反射的输入光信号从反射平面调制到输出光信号的信号被注入。

8. 发明申请

US20070055623A1 System and method for providing partial payment in the electronic commerce 审中-公开
标题翻译：在电子商务中提供部分支付的系统和方法
公开(公告)号：US20070055623A1
公开(公告)日：2007-03-08
申请号：US10576339
申请日：2004-10-16
申请人： Jung Ha , Seung Lee , Woo Lee
发明人： Jung Ha , Seung Lee , Woo Lee
IPC分类号： G06Q40/00
CPC分类号： G06Q20/12 , G06Q20/02 , G06Q20/04 , G06Q20/10 , G06Q30/06
摘要： The present invention relates to a method and system for providing a partial payment in the electronic commerce via the Internet. More particularly, the present invention relates to the present invention relates to a method and system which can more simplify procedures of payment when a user makes a payment with a plurality of payment means or when the user cancels a payment partially, changes a payment means, or changes goods.
摘要翻译：本发明涉及一种通过互联网在电子商务中提供部分支付的方法和系统。更具体地，本发明涉及一种方法和系统，当用户使用多个支付方式进行支付时，或者当用户部分地取消支付时，可以更简化支付程序，改变支付手段，或改变商品。

9. 发明申请

US20060202876A1 Reference voltage supplying circuit and analog-to-digital converter equipped therewith 失效
标题翻译：参考电压供应电路和配备有模数转换器的模拟 - 数字转换器
公开(公告)号：US20060202876A1
公开(公告)日：2006-09-14
申请号：US11373587
申请日：2006-03-10
申请人： Woo Lee
发明人： Woo Lee
IPC分类号： H03M1/00
CPC分类号： H03M1/0609 , H03M1/167
摘要： A reference voltage supplying circuit is disclosed, wherein the circuit generates stable maximum reference voltage and minimum reference voltage to a pipeline Analog to Digital Converter (ADC) even if levels of a first reference voltage and a second reference voltage are changed. According to the present invention, the first reference voltage and a maximum feedback voltage are differentially amplified by a first operational amplifier, and the second reference voltage and a minimum feedback voltage are differentially amplified by a second operational amplifier. Furthermore, a feedback voltage generator generates a maximum feedback voltage and a minimum feedback voltage in response to output signals from the first and second operational amplifiers and feedbacks the voltages to the first and second operational amplifiers, such that if the first and second reference voltages are changed, the maximum and minimum feedback voltages are changed to enable the first and second operational amplifiers to output stable signals. A reference voltage generator is operated in response to the output signals from the first and second operational amplifiers to generate stable maximum and minimum reference voltages.
摘要翻译：公开了一种参考电压供应电路，其中，即使第一参考电压和第二参考电压的电平改变，电路也为管线模数转换器（ADC）生成稳定的最大参考电压和最小参考电压。根据本发明，第一参考电压和最大反馈电压被第一运算放大器差分放大，第二参考电压和最小反馈电压被第二运算放大器差分放大。此外，反馈电压发生器响应于来自第一和第二运算放大器的输出信号产生最大反馈电压和最小反馈电压，并将电压反馈到第一和第二运算放大器，使得如果第一和第二参考电压是改变时，最大和最小反馈电压被改变以使得第一和第二运算放大器输出稳定的信号。参考电压发生器响应于来自第一和第二运算放大器的输出信号而工作，以产生稳定的最大和最小参考电压。

10. 发明申请

US20060098697A1 Wavelength tunable light source module for wavelength division multiplexing passive optical network system 审中-公开
标题翻译：波长可调光源模块，用于波分复用无源光网络系统
公开(公告)号：US20060098697A1
公开(公告)日：2006-05-11
申请号：US11120919
申请日：2005-05-02
申请人： Byoung Kim , Woo Lee , Jae Park
发明人： Byoung Kim , Woo Lee , Jae Park
IPC分类号： H01S3/10
CPC分类号： H01S5/0612 , H01S5/02284 , H01S5/02415
摘要： Disclosed is a wavelength tunable light source module for wavelength division multiplexing passive optical network systems, which is capable of being realizing at low costs, increasing utility of wavelength resources, and facilitating mass production. The wavelength tunable light source module comprising: a temperature adjustment unit for raising or lowering ambient temperature according to heat generation or heat absorption caused by an electrical signal, a support block attached to the temperature adjustment unit and having a structure for fixing a laser diode, and a TO-can type distributed feedback laser diode mounted on the temperature adjustment unit by the support block and having an operation wavelength varied according to the ambient temperature adjusted by the temperature adjustment unit.
摘要翻译：公开了一种用于波分复用无源光网络系统的波长可调光源模块，其能够以低成本实现，增加波长资源的效用并促进批量生产。该波长可调光源模块包括：温度调节单元，用于根据由电信号引起的发热或吸热而升高或降低环境温度;附接到温度调节单元的支撑块，并具有用于固定激光二极管的结构; 以及通过支撑块安装在温度调节单元上并具有根据由温度调节单元调节的环境温度而变化的工作波长的TO-can型分布式反馈激光二极管。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式