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    • 5. 发明申请
    • MAGNETIC TUNNEL JUNCTION STRUCTURE HAVING FREE LAYER WITH OBLIQUE MAGNETIZATION
    • 具有轻度磁化的自由层的磁性隧道结结构
    • US20100109111A1
    • 2010-05-06
    • US12608103
    • 2009-10-29
    • Kyung Ho SHINByoung Chul MIN
    • Kyung Ho SHINByoung Chul MIN
    • H01L29/82
    • H01F10/3254B82Y25/00G11C11/161H01F10/3277H01F10/3286H01L43/08H03B15/006Y10T428/1114Y10T428/1143
    • The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction; a second magnetic layer having a reversible magnetization direction; a non-magnetic layer formed between the first magnetic layer and the second magnetic layer; a third magnetic layer allowing the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer, and having a perpendicular magnetic anisotropic energy thereof larger than an in-plane magnetic anisotropic energy thereof; and a crystal-structure separation layer formed between the second magnetic layer and the third magnetic layer for separating a crystallographic structure between the second and the third magnetic layers.According to the present invention, a free magnetic layer constituting the is magnetic tunnel junction structure consists of at least two or more magnetic thin films having different magnetic anisotropic directions and sizes, thereby independently optimizing the effect of increasing a read signal value and reducing a critical current value required for switching.
    • 本发明提供一种磁性隧道结结构,其包括具有固定的磁化方向的第一磁性层; 具有可逆磁化方向的第二磁性层; 形成在所述第一磁性层和所述第二磁性层之间的非磁性层; 允许第二磁性层的磁化方向相对于第二磁性层的平面通过与第二磁性层的磁耦合而倾斜的第三磁性层,并且其垂直磁性各向异性能量大于面内 磁性各向异性能; 以及在所述第二磁性层和所述第三磁性层之间形成的用于分离所述第二和第三磁性层之间的结晶结构的晶体结构分离层。 根据本发明,构成磁性隧道结结构的自由磁性层由具有不同的磁各向异性方向和尺寸的至少两个以上的磁性薄膜构成,从而独立地优化增加读取信号值并减少临界值的影响 切换所需的当前值。