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    • 3. 发明申请
    • ORGANIC LIGHT EMITTING DISPLAY
    • 有机发光显示
    • US20110193885A1
    • 2011-08-11
    • US12761877
    • 2010-04-16
    • Kyung Ho LEEKyoung Soo Kwon
    • Kyung Ho LEEKyoung Soo Kwon
    • G09G5/10
    • G09G3/3233G09G3/3291G09G2300/0852G09G2300/0861G09G2310/0256
    • Disclosed herein is an organic light emitting display. The organic light emitting display is configured to include: a first transistor that receives a data signal from a data line in response to a scan signal from a scan signal line; a first capacitor that is charged with voltage corresponding to the data signal; a driving transistor that controls driving current supplied from a first power supply by corresponding to a voltage value charged in the first capacitor; a second transistor that connects or blocks the driving current transmitted through the driving transistor in response to an emission control signal from an emission control line; an organic light emitting diode that is connected between the second transistor and a second power supply and generates light corresponding to the driving current supplied from the driving transistor; and a reverse bias voltage applying module that reverses the polarity of the voltage supplied to the driving transistor simultaneously with applying reverse bias voltage to the organic light emitting diode in response to a reverse bias applying signal.
    • 这里公开了一种有机发光显示器。 有机发光显示器被配置为包括:响应于来自扫描信号线的扫描信号从数据线接收数据信号的第一晶体管; 对与数据信号相对应的电压充电的第一电容器; 驱动晶体管,其对应于在所述第一电容器中充电的电压值来控制从第一电源供给的驱动电流; 第二晶体管,其响应于来自发射控制线的发射控制信号连接或阻断传输通过驱动晶体管的驱动电流; 连接在第二晶体管和第二电源之间的有机发光二极管,产生与从驱动晶体管提供的驱动电流对应的光; 以及反向偏置电压施加模块,其响应于反向偏压施加信号,反向施加到驱动晶体管的电压的极性,同时向有机发光二极管施加反向偏置电压。
    • 6. 发明申请
    • CHARACTER ENTRY APPARATUS AND METHOD USING NUMERIC KEY
    • 字符输入装置和使用数字键的方法
    • US20080055117A1
    • 2008-03-06
    • US11782775
    • 2007-07-25
    • Kyung Ho LEE
    • Kyung Ho LEE
    • H03K17/94
    • G06F3/0233G06F3/0236
    • There are provided a character entry apparatus and a character entry method using numeric keys, the character entry apparatus including: a number input section having ten numeric keys of 0 to 9 for entry of a number set corresponding to a desired character; a display for displaying the character corresponding to the number set; and a controller for storing a character input table providing an arrangement of a plurality of characters each corresponding to a number set and when a number set is input through the number input section, controlling to display the corresponding character arranged in the character input table and associated with the number set through the display, the number set being formed to include a first number selected from a first number group having a plurality of numbers and a second number selected from a second number group having a plurality of numbers arranged independent of the first number group. The character entry apparatus and method may enhance the character input speed and simplify the character entry procedure.
    • 提供了一种使用数字键的字符输入装置和字符输入方法,所述字符输入装置包括:数字输入部分,具有用于输入与期望字符对应的数字集的0到9的数字键; 用于显示与所述数字集相对应的字符的显示器; 以及控制器,用于存储提供多个字符的排列的字符输入表,每个字符对应于一个数字集合,并且当通过数字输入部分输入数字集合时,控制显示排列在字符输入表中的相应字符和相关联的 其中通过显示器设置的号码,所设置的号码被形成为包括从具有多个号码的第一号码组中选出的第一号码和选自具有独立于第一号码的多个号码的第二号码组的第二号码 组。 字符输入装置和方法可以增强字符输入速度并简化字符输入过程。
    • 10. 发明申请
    • METHOD OF FABRICATING T-GATE
    • 制造T型门的方法
    • US20090075463A1
    • 2009-03-19
    • US12270016
    • 2008-11-13
    • Jae Yoeb SHIMHyung Sup YOONDong Min KANGJu Yeon HONGKyung Ho LEE
    • Jae Yoeb SHIMHyung Sup YOONDong Min KANGJu Yeon HONGKyung Ho LEE
    • H01L21/44
    • H01L21/0331H01L21/28587
    • A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.
    • 提供一种制造T型栅极的方法。 该方法包括以下步骤:在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。 因此,可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口,因此可以制造更精细的微型T型栅电极。