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1. 发明授权

US06752874B2 Apparatus for perpendicular-type ultra vacuum chemical vapor deposition 失效
标题翻译：垂直型超真空化学气相沉积设备
公开(公告)号：US06752874B2
公开(公告)日：2004-06-22
申请号：US09789890
申请日：2001-02-20
申请人： Kyu-Hwan Shim , Hong-Seung Kim , Seung-Yun Lee , Jin-Yeoung Kang
发明人： Kyu-Hwan Shim , Hong-Seung Kim , Seung-Yun Lee , Jin-Yeoung Kang
IPC分类号： C23C16000
CPC分类号： H01L21/67757 , C23C16/4401 , C23C16/46 , C23C16/54 , C30B25/02
摘要： The apparatus for a perpendicular type ultra vacuum chemical vapor deposition, which is for growing an epitaxy crystal as a semiconductor thin film based on a high quality, includes a growth chamber having a quartz tube of a heterostructure for maintaining a uniformity in a growth of an epitaxial layer under a high vacuum and minimizing a thermal transfer from a wafer; a wafer transferring chamber having a perpendicular transfer device for vertically transferring the wafer on which the epitaxial layer grows; a buffer chamber for preventing a stress to a transfer gear caused by a pressure difference with the wafer transferring chamber in vertically transferring the wafer; and a loadlock chamber for reducing a pollution from the outside in the growth of the epitaxial layer, horizontally transferring the wafer completed in the growth of the epitaxial layer, and discharging it to the outside.
摘要翻译：用于生长基于高质量的半导体薄膜的外延晶体的用于垂直型超真空化学气相沉积的装置包括具有异质结构的石英管的生长室，用于保持生长中的均匀性外延层，并使来自晶片的热传递最小化; 晶片传送室具有用于垂直传送其上外延层生长的晶片的垂直转移装置; 缓冲室，用于在垂直传送晶片时防止与晶片传送室的压力差导致的传递齿轮的应力; 以及负载锁定室，用于在外延层的生长中减少来自外部的污染，水平地转移在外延层的生长中完成的晶片，并将其放电到外部。

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