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1. 发明授权

US07781719B2 High sensitivity and high dynamic-range CMOS image sensor pixel structure with dynamic C-V characteristics 有权
标题翻译：高灵敏度和高动态范围CMOS图像传感器像素结构具有动态C-V特性
公开(公告)号：US07781719B2
公开(公告)日：2010-08-24
申请号：US11463679
申请日：2006-08-10
申请人： Kyoung-Hoon Yang , Sung-Sik Lee
发明人： Kyoung-Hoon Yang , Sung-Sik Lee
IPC分类号： H01J40/14 , H03F3/08
CPC分类号： H01L27/14609 , H01L27/14643 , H04N5/3559
摘要： A new photogate pixel structure for high performance CMOS Image Sensors is proposed. A new photogate structure is incorporated into the photodiode active-pixel structure. The proposed pixel structure exhibits the dynamic integration capacitance characteristics, which can be controlled by varying the control-voltage at the photogate node. Since the sensitivity is inversely proportional to the integration capacitance, the dynamic integration capacitance characteristics can provide the new functionality and controllability for high sensitivity and high dynamic range. At a low voltage level of the photogate, the pixel sensitivity of the new photogate pixel structure is maximized due to the minimum value of the integration capacitance. At a high voltage of the photogate, the dynamic range of the new structure can be maximized due to the increased well capacity. In addition, at an optimum bias voltage of the photogate, both the dynamic-range and the sensitivity can be simultaneously improved. Consequently, the new pixel structure allows performance tunability as well as optimization in both the dynamic range and the sensitivity of the image sensor cell.
摘要翻译：提出了一种用于高性能CMOS图像传感器的新型光栅像素结构。新的光栅结构被并入到光电二极管有源像素结构中。所提出的像素结构表现出动态积分电容特性，其可以通过改变光栅节点处的控制电压来控制。由于灵敏度与积分电容成反比，动态积分电容特性可为高灵敏度和高动态范围提供新的功能和可控性。在光栅的低电压电平下，由于积分电容的最小值，新的光栅像素结构的像素灵敏度最大化。在光栅的高电压下，由于井容量的增加，新结构的动态范围可以最大化。另外，在光栅的最佳偏置电压下，可以同时提高动态范围和灵敏度。因此，新的像素结构允许性能可调性以及图像传感器单元的动态范围和灵敏度的优化。

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