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1. 发明授权

US06326259B1 Method of manufacturing a capacitor in a semiconductor device 失效
标题翻译：在半导体器件中制造电容器的方法
公开(公告)号：US06326259B1
公开(公告)日：2001-12-04
申请号：US09852602
申请日：2001-05-10
申请人： Kyong Min Kim , Han Sang Song , Dong Jun Kim
发明人： Kyong Min Kim , Han Sang Song , Dong Jun Kim
IPC分类号： H01L218242
CPC分类号： H01L28/56 , H01L21/02183 , H01L21/02194 , H01L21/0234 , H01L21/02348 , H01L21/31604 , H01L28/91
摘要： A method of manufacturing a capacitor in a semiconductor device uses a metal as an upper electrode and a lower electrode, and forms a dielectric film in a double structure of a titanium-containing tantalum oxide film and an amorphous tantalum oxide film. Therefore, the invention can secure a sufficient capacitance while improving an electrical characteristic of the capacitor.
摘要翻译：在半导体器件中制造电容器的方法使用金属作为上部电极和下部电极，并且在含钛的钽氧化物膜和非晶形氧化钽膜的双重结构中形成电介质膜。因此，本发明可以确保足够的电容，同时改善电容器的电特性。

2. 发明授权

US06716717B2 Method for fabricating capacitor of semiconductor device 失效
标题翻译：制造半导体器件电容器的方法
公开(公告)号：US06716717B2
公开(公告)日：2004-04-06
申请号：US09867527
申请日：2001-05-31
申请人： Kyong Min Kim , Dong Jun Kim
发明人： Kyong Min Kim , Dong Jun Kim
IPC分类号： H01L2120
CPC分类号： H01L21/02356 , C23C16/0281 , C23C16/308 , H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L21/3145 , H01L28/60
摘要： Disclosed herein is a method for the fabrication of a capacitor of semiconductor device, which is capable of increasing a charge storage capacitance of the capacitor while preventing generation of leakage current in the capacitor. The disclosed method comprises comprising the steps of: forming a ruthenium film as a lower electrode on a semiconductor substrate; depositing an amorphous TaON film having an excellent dielectric constant on the ruthenium film; subjecting the resulting substrate to a first thermal treatment to prevent oxidation of the lower electrode and to remove carbons present in the amorphous TaON thin film; subjecting the resulting substrate to a second thermal treatment to crystallize the amorphous TaON thin film; and forming a metal film as a metal film on the crystalline TaON film.
摘要翻译：这里公开了一种用于制造半导体器件的电容器的方法，其能够增加电容器的电荷存储电容，同时防止在电容器中产生漏电流。所公开的方法包括以下步骤：在半导体衬底上形成作为下电极的钌膜; 在所述钌膜上沉积具有优异介电常数的无定形TaON膜; 对所得到的基板进行第一热处理以防止下电极的氧化并除去存在于非晶态TaON薄膜中的碳; 对所得衬底进行第二次热处理以使无定形TaON薄膜结晶; 并在结晶TaON膜上形成金属膜作为金属膜。

3. 发明授权

US06410381B1 Method for forming capacitor of semiconductor device 有权
公开(公告)号：US06410381B1
公开(公告)日：2002-06-25
申请号：US09867658
申请日：2001-05-31
申请人： Kyong Min Kim , Kyung Cheol Jeong , Han Sang Song , Dong Jun Kim
发明人： Kyong Min Kim , Kyung Cheol Jeong , Han Sang Song , Dong Jun Kim
IPC分类号： H01L218242
摘要： The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time. The method includes the steps of depositing a cap oxide film on a semiconductor substrate, patterning the cap oxide film to expose a capacitor region of the semiconductor substrate, consecutively depositing an Ru film for a lower electrode on the patterned cap oxide film and the semiconductor substrate in in-situ according to a low pressure chemical vapor deposition(LPCVD) and a plasma enhanced chemical vapor deposition(PECVD), forming a cylindrical lower electrode, by performing a chemical mechanical polishing process on the Ru film and removing the cap oxide film, forming an amorphous TaON film having a high dielectric constant on the lower electrode, crystallizing the amorphous TaON film according to a thermal treatment, and forming a metal film for an upper electrode on the crystallized TaON film.

4. 发明授权

US06365487B2 Method of manufacturing a capacitor in a semiconductor device 有权
标题翻译：在半导体器件中制造电容器的方法
公开(公告)号：US06365487B2
公开(公告)日：2002-04-02
申请号：US09852929
申请日：2001-05-10
申请人： Kyong Min Kim , Han Sang Song , Dong Jun Kim
发明人： Kyong Min Kim , Han Sang Song , Dong Jun Kim
IPC分类号： H01L2120
CPC分类号： H01L21/02183 , H01L21/02271 , H01L21/0234 , H01L21/02348 , H01L21/31604 , H01L28/55 , H01L28/75 , H01L28/91
摘要： A method of manufacturing a capacitor in a semiconductor device wherein a first a Ru film used as a lower electrode is deposited by an LPCVD method, a mixed plasma process of Ar and H2 is performed, and a second Ru film is deposited by an LPCVD method, thus improving the surface roughness of the Ru film. The method can obtain a high capacitance and a low leakage current in a capacitor using a Ta2O5 film as a dielectric film.
摘要翻译：一种在半导体器件中制造电容器的方法，其中通过LPCVD方法沉积用作下电极的第一Ru膜，进行Ar和H2的混合等离子体处理，并通过LPCVD法沉积第二Ru膜，从而提高Ru膜的表面粗糙度。该方法可以在使用Ta 2 O 5膜作为电介质膜的电容器中获得高电容和低漏电流。

5. 发明授权

US06653197B2 Method for fabricating capacitor of semiconductor device 失效
标题翻译：制造半导体器件电容器的方法
公开(公告)号：US06653197B2
公开(公告)日：2003-11-25
申请号：US09867657
申请日：2001-05-31
申请人： Kyong Min Kim , Kwang Jun Cho , Jong Min Lee
发明人： Kyong Min Kim , Kwang Jun Cho , Jong Min Lee
IPC分类号： H01L2120
CPC分类号： H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L21/02356 , H01L21/3143 , H01L28/60
摘要： Disclosed herein is a method for the fabrication of a capacitor of semiconductor device, which is capable of increasing a charge storage capacitance of the capacitor while generation of leakage current in the capacitor. The method comprises the steps of: forming a ruthenium film as a lower electrode on a semiconductor substrate; forming a TaON film having a high dielectric constant on the ruthenium film; and forming a upper electrode on the TaON film.
摘要翻译：这里公开了一种用于制造半导体器件的电容器的方法，其能够在电容器中产生漏电流的同时增加电容器的电荷存储电容。该方法包括以下步骤：在半导体衬底上形成作为下电极的钌膜; 在钌膜上形成具有高介电常数的TaON膜; 并在TaON膜上形成上电极。

6. 发明授权

US06329237B1 Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasma 有权
标题翻译：在使用在臭氧等离子体中处理的高介电钽氧化物或钛酸钡锶材料的半导体器件中制造电容器的方法
公开(公告)号：US06329237B1
公开(公告)日：2001-12-11
申请号：US09466896
申请日：1999-12-20
申请人： Kyong Min Kim , Chan Lim , Kil Ho Lee , Ki Seon Park
发明人： Kyong Min Kim , Chan Lim , Kil Ho Lee , Ki Seon Park
IPC分类号： H01L218242
CPC分类号： H01L21/31691 , C23C16/405 , C23C16/409 , C23C16/56 , H01L28/55
摘要： There is disclosed a method of making a high dielectric capacitor of a semiconductor device using Ta2O5, BST((Ba1−xSrx)TiO3) etc. of a high dielectric characteristic as a capacitor dielectric film in a very high integrated memory device. The present invention has its object to provide a method of manufacturing a high dielectric capacitor of a semiconductor device, which can effectively remove carbon contained within the thin film after deposition of the BST film and defects of oxygen depletion caused upon deposition of the thin film and which can also remove carbon contained within the thin film after deposition of the tantalum oxide film and defects of oxygen depletion caused upon deposition of the thin film, without further difficult processes or without any deterioration of the electrical characteristic of the capacitor. It employs the technology which is able to effectively removing defects of carbon and oxygen depletion within the thin film, by forming a plasma O3 gas having a good reactivity and by processing the plasma for the BST thin film and tantalum oxide film. Thus, it can extend the lifetime of the activated oxygen of oxygen, which had been a problem in processing a conventional UV-O3, by means of plasma process using O3 gas. Therefore, it can effectively remove defects of carbon and oxygen within the BST thin film and tantalum oxide film without complicating the process or deteriorating the electrical characteristic of the capacitor. The present invention also proposes a detailed process condition, which can optimize the plasma process using O3 gas.
摘要翻译：公开了在非常高的集成存储器件中使用具有高介电特性的Ta2O5，BST（（Ba1-xSrx）TiO3）等作为电容器电介质膜的半导体器件的高介电电容器的方法。本发明的目的是提供一种制造半导体器件的高介电电容器的方法，其可以有效地去除沉积BST膜之后的薄膜中包含的碳和沉积薄膜时引起的氧耗损缺陷，其也可以在沉积氧化钽膜之后，除去薄膜中所含的碳和沉积薄膜所引起的氧耗尽的缺陷，而不需要进一步的困难处理或不会使电容器的电特性恶化。通过形成具有良好反应性的等离子体O 3气体和通过处理BST薄膜和氧化钽膜的等离子体，采用能够有效地去除薄膜内的碳和氧缺乏的缺陷的技术。因此，通过使用O 3气体的等离子体处理，可以延长氧气的活化氧的寿命，这在处理常规的UV-O 3中是一个问题。因此，可以有效地去除BST薄膜和氧化钽膜内的碳和氧的缺陷，而不会使工艺复杂化或劣化电容器的电特性。本发明还提出了一种详细的工艺条件，其可以优化使用O 3气体的等离子体工艺。

7. 发明授权

US06709916B2 Method for forming capacitor of semiconductor device 失效
标题翻译：形成半导体器件电容器的方法
公开(公告)号：US06709916B2
公开(公告)日：2004-03-23
申请号：US10330583
申请日：2002-12-27
申请人： Kwang Jun Cho , Ki Seon Park , Kyong Min Kim , Dong Woo Shin
发明人： Kwang Jun Cho , Ki Seon Park , Kyong Min Kim , Dong Woo Shin
IPC分类号： H01L218242
CPC分类号： H01L28/56 , C23C16/409 , H01L21/31691 , H01L27/10855
摘要： A method for forming a capacitor of a semiconductor device having a dielectric film of high dielectric constant having three-dimensional structure for securing capacitance of semiconductor device in order to have excellent deposition characteristics, by forming a storage electrode formed of Ru film on a semiconductor substrate and forming dielectric films formed of high dielectric constant materials having excellent step coverage on the surface of the storage electrode, the dielectric films having a stacked structure of a first dielectric film formed at low deposition speed and a second dielectric film formed at higher deposition speed by reducing the amount of added gas, thereby performing the subsequent process easily and improving yield and productivity of semiconductor device and then embodying high integration of semiconductor device.
摘要翻译：一种用于形成半导体器件的电容器的方法，具有具有三维结构的具有三维结构的介电膜的半导体器件的电容器，用于通过在半导体衬底上形成由Ru膜形成的存储电极以便具有优异的淀积特性，从而确保半导体器件的电容以及在所述存储电极的表面上形成由具有优异阶梯覆盖度的高介电常数材料形成的电介质膜，所述电介质膜具有以低沉积速度形成的第一电介质膜的堆叠结构和以较高沉积速度形成的第二电介质膜减少添加气体的量，从而容易地进行后续处理，并提高半导体器件的产率和生产率，然后体现半导体器件的高集成度。

8. 发明授权

US06699768B2 Method for forming capacitor of semiconductor device 失效
标题翻译：形成半导体器件电容器的方法
公开(公告)号：US06699768B2
公开(公告)日：2004-03-02
申请号：US10315403
申请日：2002-12-10
申请人： Kyong Min Kim
发明人： Kyong Min Kim
IPC分类号： H01L218242
CPC分类号： H01L28/65 , C23C16/18 , H01L21/28556 , H01L27/10855 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： Methods for forming capacitors of semiconductor devices are disclosed, and more particularly, methods for forming capacitors having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (hereinafter, referred to as ‘Ru’), which provides improved formation rates of Ru film having desired thickness using ozone (O3) having high reactivity.
摘要翻译：公开了用于形成半导体器件的电容器的方法，更具体地，涉及用于形成具有金属层 - 绝缘膜 - 金属层的堆叠结构并且具有由钌形成的存储电极（以下称为“Ru”）的电容器的方法，其使用具有高反应性的臭氧（O 3）提供具有期望厚度的Ru膜的提高的形成速率。

9. 发明授权

US06607963B2 Method for forming capacitor of semiconductor device 失效
公开(公告)号：US06607963B2
公开(公告)日：2003-08-19
申请号：US09867660
申请日：2001-05-31
申请人： Kyong Min Kim , Han Sang Song
发明人： Kyong Min Kim , Han Sang Song
IPC分类号： H01L2120
CPC分类号： H01L28/60 , H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/02356 , H01L21/28556 , H01L21/3144 , H01L21/3212 , H01L28/91
摘要： The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time. The method includes the steps of providing a semiconductor substrate where a plug polysilicon film and a metal barrier film consisting of Ti/TiN film have been sequentially filled in a contact hole of an interlayer insulation film, forming a cap oxide film on the semiconductor substrate, patterning the cap oxide film to define a capacitor region and to expose the interlayer insulation film and the metal barrier film, forming a nitride film over the whole substrate according to a plasma treatment using NH3 gas, depositing an Ru film for a lower electrode on the nitride film, forming a cylindrical lower electrode, by performing a chemical mechanical polishing process on the Ru film and the nitride film, and removing the cap oxide film, depositing an amorphous TaON film on the lower electrode, crystallizing the amorphous TaON film according to a thermal treatment, and forming a metal film for an upper electrode on the crystallized TaON film.

10. 发明授权

US06559000B2 Method of manufacturing a capacitor in a semiconductor device 失效
公开(公告)号：US06559000B2
公开(公告)日：2003-05-06
申请号：US09894920
申请日：2001-06-29
申请人： Kyong Min Kim , Jong Min Lee , Chan Lim , Han Sang Song
发明人： Kyong Min Kim , Jong Min Lee , Chan Lim , Han Sang Song
IPC分类号： H01L218242
CPC分类号： H01L28/60 , C23C16/18 , H01L21/31604
摘要： There is disclosed a method of manufacturing a capacitor in a semiconductor device. The present invention forms a Ru film as a lower electrode of the capacitor in which a Ta2O5 film is used as a dielectric film by introducing Ru of a raw material, oxygen and NH3 in order to reduce oxygen or a NH3 plasma process as a subsequent process is performed in order to remove oxygen existing on the surface of the Ru film. Therefore, the present invention can prevent oxidization of a diffusion prevention film due to oxygen existing in a Ru film during annealing process performed after deposition of a Ta2O5 film and thus improve reliability of the device.

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