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    • 6. 发明申请
    • THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME
    • 薄膜晶体管及其制造方法
    • US20110084278A1
    • 2011-04-14
    • US12576591
    • 2009-10-09
    • Yong-Soo ChoKyo-Ho MoonHoon Choi
    • Yong-Soo ChoKyo-Ho MoonHoon Choi
    • H01L33/00H01L21/336
    • H01L29/4908H01L27/1214H01L29/78648
    • The present invention relates to a thin-film transistor in a liquid crystal display device and a method of fabricating the same, and the thin-film transistor may be configured by including a first gate electrode formed on an insulating substrate; a first gate insulation film formed on the insulating substrate including the first gate electrode; an active layer formed on the first gate insulation film; source/drain electrodes formed on the active layer and arranged at both sides of the first gate electrode; a second gate insulation film formed on the active layer and the first gate insulation film including the source/drain electrodes and provided with a contact hole for exposing part of the drain electrode; a second gate electrode overlapped with the first gate electrode on the second gate insulation film; and a pixel electrode electrically connected to the drain electrode through the contact hole.
    • 液晶显示装置中的薄膜晶体管及其制造方法技术领域本发明涉及液晶显示装置中的薄膜晶体管及其制造方法,薄膜晶体管可以通过包括形成在绝缘基板上的第一栅电极构成, 形成在包括所述第一栅极的所述绝缘基板上的第一栅极绝缘膜; 形成在第一栅极绝缘膜上的有源层; 源极/漏电极,形成在有源层上,并布置在第一栅电极的两侧; 形成在所述有源层上的第二栅极绝缘膜和包括所述源极/漏极的所述第一栅极绝缘膜,并且设置有用于使所述漏极的一部分露出的接触孔; 在所述第二栅极绝缘膜上与所述第一栅电极重叠的第二栅电极; 以及通过接触孔与漏电极电连接的像素电极。
    • 7. 发明授权
    • Thin film transistor and method for fabricating the same
    • 薄膜晶体管及其制造方法
    • US08748892B2
    • 2014-06-10
    • US12576591
    • 2009-10-09
    • Yong-Soo ChoKyo-Ho MoonHoon Choi
    • Yong-Soo ChoKyo-Ho MoonHoon Choi
    • H01L31/00H01L29/04H01L29/10H01L21/00H01L21/84
    • H01L29/4908H01L27/1214H01L29/78648
    • The present invention relates to a thin-film transistor in a liquid crystal display device and a method of fabricating the same, and the thin-film transistor may be configured by including a first gate electrode formed on an insulating substrate; a first gate insulation film formed on the insulating substrate including the first gate electrode; an active layer formed on the first gate insulation film; source/drain electrodes formed on the active layer and arranged at both sides of the first gate electrode; a second gate insulation film formed on the active layer and the first gate insulation film including the source/drain electrodes and provided with a contact hole for exposing part of the drain electrode; a second gate electrode overlapped with the first gate electrode on the second gate insulation film; and a pixel electrode electrically connected to the drain electrode through the contact hole.
    • 液晶显示装置中的薄膜晶体管及其制造方法技术领域本发明涉及液晶显示装置中的薄膜晶体管及其制造方法,薄膜晶体管可以通过包括形成在绝缘基板上的第一栅电极构成, 形成在包括所述第一栅极的所述绝缘基板上的第一栅极绝缘膜; 形成在第一栅极绝缘膜上的有源层; 源极/漏电极,形成在有源层上,并布置在第一栅电极的两侧; 形成在所述有源层上的第二栅极绝缘膜和包括所述源极/漏极的所述第一栅极绝缘膜,并且设置有用于使所述漏极的一部分露出的接触孔; 在所述第二栅极绝缘膜上与所述第一栅电极重叠的第二栅电极; 以及通过接触孔与漏电极电连接的像素电极。