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1. 发明申请

US20080248637A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20080248637A1
公开(公告)日：2008-10-09
申请号：US11962416
申请日：2007-12-21
申请人： Dong Ho Lee , Kwon Hong , Jae Mun Kim , Hee Soo Kim , Jae Hyoung Koo
发明人： Dong Ho Lee , Kwon Hong , Jae Mun Kim , Hee Soo Kim , Jae Hyoung Koo
IPC分类号： H01L21/425
CPC分类号： H01L21/28061 , H01L21/265 , H01L21/324
摘要： In one embodiment, a gate insulating layer, a conductive layer, and a metal layer are formed over a semiconductor substrate. An ion implantation region is formed in an interface of the conductive layer and the metal layer by performing an ion implantation process. A flash annealing process is performed on the ion-implanted semiconductor substrate. The metal layer, the conductive layer, and the gate insulating layer are patterned.
摘要翻译：在一个实施例中，在半导体衬底上形成栅绝缘层，导电层和金属层。通过进行离子注入工艺，在导电层和金属层的界面上形成离子注入区。在离子注入的半导体衬底上进行闪光退火处理。图案化金属层，导电层和栅极绝缘层。

2. 发明申请

US20080160748A1 Method of Forming Dielectric Layer of Flash Memory Device 审中-公开
标题翻译：形成闪存器件介质层的方法
公开(公告)号：US20080160748A1
公开(公告)日：2008-07-03
申请号：US11954673
申请日：2007-12-12
申请人： Kwon Hong , Dong Ho Lee , Jae Mun Kim , Hee Soo Kim , Jae Hyoung Koo
发明人： Kwon Hong , Dong Ho Lee , Jae Mun Kim , Hee Soo Kim , Jae Hyoung Koo
IPC分类号： H01L21/283
CPC分类号： H01L27/115 , H01L27/11521 , H01L29/513 , H01L29/7881
摘要： The present invention relates to a method of forming a dielectric layer of a flash memory device. In a process of forming a dielectric layer of a flash memory device, the dielectric layer may include a first oxide layer, a high dielectric layer, and a second oxide layer is formed. Accordingly, a leakage current characteristic and reliability of the flash memory device can be improved.
摘要翻译：本发明涉及一种形成闪存器件的电介质层的方法。在形成闪速存储器件的电介质层的过程中，介电层可以包括第一氧化物层，高电介质层和形成第二氧化物层。因此，可以提高闪存器件的漏电流特性和可靠性。

3. 发明授权

US07674696B2 Method of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07674696B2
公开(公告)日：2010-03-09
申请号：US11962416
申请日：2007-12-21
申请人： Dong Ho Lee , Kwon Hong , Jae Mun Kim , Hee Soo Kim , Jae Hyoung Koo
发明人： Dong Ho Lee , Kwon Hong , Jae Mun Kim , Hee Soo Kim , Jae Hyoung Koo
IPC分类号： H01L21/425
CPC分类号： H01L21/28061 , H01L21/265 , H01L21/324
摘要： In one embodiment, a gate insulating layer, a conductive layer, and a metal layer are formed over a semiconductor substrate. An ion implantation region is formed in an interface of the conductive layer and the metal layer by performing an ion implantation process. A flash annealing process is performed on the ion-implanted semiconductor substrate. The metal layer, the conductive layer, and the gate insulating layer are patterned.
摘要翻译：在一个实施例中，在半导体衬底上形成栅绝缘层，导电层和金属层。通过进行离子注入工艺，在导电层和金属层的界面上形成离子注入区。在离子注入的半导体衬底上进行闪光退火处理。图案化金属层，导电层和栅极绝缘层。

4. 发明申请

US20080157181A1 NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20080157181A1
公开(公告)日：2008-07-03
申请号：US11964287
申请日：2007-12-26
申请人： Jae Mun Kim , Jae Hyoung Koo , Dong Ho Lee , Kwon Hong , Woo Ri Jeong , Hee Soo Kim , Seung Woo Shin
发明人： Jae Mun Kim , Jae Hyoung Koo , Dong Ho Lee , Kwon Hong , Woo Ri Jeong , Hee Soo Kim , Seung Woo Shin
IPC分类号： H01L29/788 , H01L21/28
CPC分类号： H01L29/42324 , H01L29/40114 , H01L29/513 , H01L29/7881
摘要： A non-volatile memory device and a fabrication method thereof. A high-k layer is formed between nitrogen-containing insulating layers. Accordingly, an interface reaction between an underlying oxide layer and the high-k insulating layer or between the oxide layer and a floating gate or a control gate can be prohibited and the electrical characteristics of the high-k layer can be improved, and a non-volatile memory device with high performance and high reliability can be fabricated.
摘要翻译：一种非易失性存储器件及其制造方法。在含氮绝缘层之间形成高k层。因此，可以禁止下面的氧化物层和高k绝缘层之间或氧化物层与浮动栅极或控制栅极之间的界面反应，并且可以提高高k层的电特性，可以制造具有高性能和高可靠性的易失性存储器件。

5. 发明授权

US08026140B2 Method of forming flash memory device 失效
标题翻译：形成闪存设备的方法
公开(公告)号：US08026140B2
公开(公告)日：2011-09-27
申请号：US12344447
申请日：2008-12-26
申请人： Hee Soo Kim , Jae Mun Kim
发明人： Hee Soo Kim , Jae Mun Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/76232 , H01L27/11521
摘要： The present invention relates to a method of forming a flash memory device, which is capable of forming floating gates. According to a method of forming a flash memory device in accordance with the present invention, isolation mask patterns are first formed over a semiconductor substrate. Trenches are formed by performing an etching process using the isolation mask patterns. Isolation layers are formed between the isolation mask patterns, including the insides of the respective trenches. The isolation mask patterns are removed. Tunnel dielectric layers and crystallized first conductive layers are sequentially formed over the exposed semiconductor substrate. A dielectric layer and a second conductive layer are formed over the isolation layers and the first conductive layers.
摘要翻译：本发明涉及一种能够形成浮动栅极的闪速存储器件的形成方法。根据本发明的形成闪速存储器件的方法，首先在半导体衬底上形成隔离掩模图案。通过使用隔离掩模图案执行蚀刻工艺来形成沟槽。隔离层形成在隔离掩模图案之间，包括各个沟槽的内部。隔离掩模图案被去除。隧道电介质层和结晶的第一导电层依次形成在暴露的半导体衬底上。在绝缘层和第一导电层上形成介电层和第二导电层。

6. 发明授权

US08367885B2 Method of preparing multicomponent bismuth molybdate catalysts with controlling pH and a method of preparing 1,3-butadiene using thereof 失效
标题翻译：制备控制pH的多组分钼酸铋催化剂的方法和使用其制备1,3-丁二烯的方法
公开(公告)号：US08367885B2
公开(公告)日：2013-02-05
申请号：US12451437
申请日：2008-05-08
申请人： Young Min Chung , Seong Jun Lee , Tae Jin Kim , Seung Hoon Oh , Yong Seung Kim , In Kyu Song , Hee Soo Kim , Ji Chul Jung , Ho Won Lee
发明人： Young Min Chung , Seong Jun Lee , Tae Jin Kim , Seung Hoon Oh , Yong Seung Kim , In Kyu Song , Hee Soo Kim , Ji Chul Jung , Ho Won Lee
IPC分类号： C07C5/48
CPC分类号： H04N21/4126 , B01J23/002 , B01J23/31 , B01J23/8876 , B01J37/031 , B01J2523/00 , C07C5/48 , C07C2523/18 , C07C2523/28 , C07C2523/745 , C07C2523/755 , C07C2523/883 , H04N21/4334 , H04N21/43615 , H04N21/43637 , H04N21/440263 , H04N21/64322 , C07C11/167 , B01J2523/54 , B01J2523/68 , B01J2523/842 , B01J2523/847
摘要： This invention relates to a method of preparing a multicomponent bismuth molybdate catalyst by changing the pH of a coprecipitation solution upon coprecipitation and a method of preparing 1,3-butadiene using the catalyst. The multicomponent bismuth molybdate catalyst, coprecipitated using a solution having an adjusted pH, the preparation method thereof, and the method of preparing 1,3-butadiene through oxidative dehydrogenation using a C4 mixture including n-butene and n-butane as a reactant are provided. The C4 raffinate, containing many impurities, is directly used as a reactant without an additional process for separating n-butane or extracting n-butene, thus obtaining 1,3-butadiene at high yield. The activity of the multicomponent bismuth molybdate catalyst can be simply increased through precise pH adjustment upon coprecipitation, which is not disclosed in the conventional techniques. This method can be applied to the increase in the activity of multicomponent bismuth molybdate catalysts reported in the art.
摘要翻译：本发明涉及通过在共沉淀时改变共沉淀溶液的pH值和使用该催化剂制备1,3-丁二烯的方法制备多组分钼酸铋催化剂的方法。提供了使用调节pH的溶液共沉淀的多组分钼酸铋催化剂及其制备方法以及使用包含正丁烯和正丁烷作为反应物的C4混合物通过氧化脱氢制备1,3-丁二烯的方法。含有许多杂质的C4萃余液直接用作反应物，而不需要另外的分离正丁烷或提取正丁烯的方法，从而以高产率获得1,3-丁二烯。多组分钼酸铋催化剂的活性可以通过共沉淀下的精确pH调节简单地增加，这在传统技术中没有公开。该方法可以应用于本领域中报道的多组分钼酸铋催化剂的活性的提高。

7. 发明申请

US20120161914A1 TRANSFORMER 审中-公开
标题翻译：变压器
公开(公告)号：US20120161914A1
公开(公告)日：2012-06-28
申请号：US13335377
申请日：2011-12-22
申请人： Hee Soo Yoon , Hee Soo Kim , Dong Jin Kim , Kyu Hwan Oh , Kyung Ho Lee , Kyoung Ho Lee , Su Bong Jang , Jeong Ho Yoon , Dong Hwan Lee
发明人： Hee Soo Yoon , Hee Soo Kim , Dong Jin Kim , Kyu Hwan Oh , Kyung Ho Lee , Kyoung Ho Lee , Su Bong Jang , Jeong Ho Yoon , Dong Hwan Lee
IPC分类号： H01F27/28
CPC分类号： H01F27/2804 , H01F2027/2809
摘要： There is provided a transformer having a minimized thickness. The transformer includes: insulating layers; and coil units including primary and secondary coils disposed on the insulating layers to have a common center.
摘要翻译：提供了具有最小厚度的变压器。变压器包括：绝缘层; 以及包括设置在绝缘层上以具有公共中心的初级和次级线圈的线圈单元。

8. 发明申请

US20090088594A1 BISMUTH MOLYBDATE-BASED CATALYSTS, METHOD OF PREPARING THEREOF AND METHOD OF PREPARING 1,3-BUTADIENE USING THEREOF 有权
标题翻译： BISMUTH MOLYBAST基催化剂及其制备方法及其制备1,3-丁二烯的方法
公开(公告)号：US20090088594A1
公开(公告)日：2009-04-02
申请号：US12297352
申请日：2007-03-16
申请人： Seung Hoon Oh , Seong Jun Lee , Tae Jin Kim , Ahn Seop Choi , Young Min Chung , In Kyu Song , Ji Chul Jung , Hee Soo Kim
发明人： Seung Hoon Oh , Seong Jun Lee , Tae Jin Kim , Ahn Seop Choi , Young Min Chung , In Kyu Song , Ji Chul Jung , Hee Soo Kim
IPC分类号： C07C5/333 , B01J23/31
CPC分类号： B01J35/0006 , B01J23/31 , B01J35/002 , B01J37/03 , C07C5/3335 , C07C2523/644 , C07C11/167
摘要： This invention relates to a bismuth molybdate catalyst, a preparation method thereof, and a method of preparing 1,3-butadiene using the same, and to a bismuth molybdate catalyst, a preparation method thereof, and a method of preparing 1,3-butadiene using the same, in which 1,3-butadiene can be prepared through oxidative dehydrogenation directly using a C4 mixture including n-butene and n-butane as a reactant in the presence of a mixed-phase bismuth molybdate catalyst including α-bismuth molybdate (Bi2Mo3On) and γ-bismuth molybdate (Bi2MoO6). According to this invention, the C4 raffinate, containing many impurities, is used as a reactant, without an additional n-butane separation process, thus obtaining 1,3-butadiene at high yield. Unlike complicated multicomponent-based metal oxides, the catalyst of the invention has simple constituents and synthesis routes, and can be easily formed through physical mixing, and thus is very advantageous in assuring reproducibility and can be directly applied to commercial processes.
摘要翻译：本发明涉及钼酸铋催化剂及其制备方法，以及使用其制备1,3-丁二烯的方法，以及钼酸铋催化剂及其制备方法以及制备1,3-丁二烯的方法使用相同的方法，其中可以通过氧化脱氢制备1,3-丁二烯，其中包括在包括α-钼酸铋的混合钼酸铋催化剂存在下，使用包含正丁烯和正丁烷的C4混合物作为反应物 Bi2Mo3On）和γ-钼酸铋（Bi2MoO6）。根据本发明，不含额外的正丁烷分离方法，将含有许多杂质的C4萃余液用作反应物，从而以高产率获得1,3-丁二烯。不同于复合多组分金属氧化物，本发明的催化剂具有简单的组成和合成路线，并且可以通过物理混合容易地形成，因此在确保再现性方面是非常有利的，并且可以直接应用于商业过程。

9. 发明申请

US20080259045A1 METHOD OF CONTROLLING MOBILE COMMUNICATION DEVICE EQUIPPED WITH TOUCH SCREEN, COMMUNICATION DEVICE AND METHOD OF EXECUTING FUNCTIONS THEREOF 有权
标题翻译：控制具有触摸屏的移动通信设备的方法，通信设备及其执行功能的方法
公开(公告)号：US20080259045A1
公开(公告)日：2008-10-23
申请号：US12058655
申请日：2008-03-28
申请人： Jong-Hwan Kim , Sang Hyuck Lee , Mu Hy Yoon , Hee Soo Kim
发明人： Jong-Hwan Kim , Sang Hyuck Lee , Mu Hy Yoon , Hee Soo Kim
IPC分类号： G06F3/041
CPC分类号： H04M1/72583 , G06F3/04842 , G06F3/0486 , G06F3/0488 , G06F3/04883 , H04M1/0235 , H04M1/274508 , H04M1/72522 , H04M1/72547 , H04M2250/22 , H04M2250/52
摘要： A method of controlling a mobile communication device equipped with a touch screen, and a communication device and a method of executing functions thereof are disclosed. A method of controlling a mobile communication device includes displaying a plurality of execution keys on a touch screen in a standby mode and executing an operation assigned to a specific one of the plurality of execution keys by touching and dragging the specific execution key.
摘要翻译：公开了一种控制配备有触摸屏的移动通信装置的方法，以及通信装置及其执行功能的方法。一种控制移动通信设备的方法包括在待机模式下在触摸屏上显示多个执行键，并通过触摸和拖动特定执行键来执行分配给多个执行键中的特定执行键的操作。

10. 发明授权

US08772992B2 Airfoil-magnetic hybrid bearing and a control system thereof 有权
标题翻译：翼型磁性混合轴承及其控制系统
公开(公告)号：US08772992B2
公开(公告)日：2014-07-08
申请号：US12739590
申请日：2007-11-19
申请人： Yong Bok Lee , Chang Ho Kim , Seung Jong Kim , Sang Hwa Lee , Hee Soo Kim
发明人： Yong Bok Lee , Chang Ho Kim , Seung Jong Kim , Sang Hwa Lee , Hee Soo Kim
IPC分类号： H02K7/09
CPC分类号： F16C32/0444 , F16C17/024 , F16C32/0402 , F16C32/048
摘要： An airfoil-magnetic hybrid bearing, which is a combination of a magnetic bearing and airfoil bearing includes a housing, an airfoil bearing, a magnetic bearing, coils, and a coupling segment. The housing is around a rotating shaft of a rotation device. The airfoil bearing is positioned between the housing and the rotating shaft to form dynamic pressure to levitate the rotating shaft during rotation of the rotating shaft. The magnetic bearing includes cores positioned radially between inner surface of the housing and outer surface of the airfoil bearing. The cores are projected to the center of the rotating shaft. The coils wound to the cores to levitate the rotating shaft using a magnetic attractive force generated by a current application thereto. The coupling segment is configured to couple the airfoil bearing to the magnetic bearing directly.
摘要翻译：作为磁轴承和翼型轴承的组合的翼型 - 磁性混合轴承包括壳体，翼型轴承，磁性轴承，线圈和联接段。壳体围绕旋转装置的旋转轴。翼型轴承定位在壳体和旋转轴之间，以在旋转轴旋转期间形成动态压力以使旋转轴悬浮。磁性轴承包括位于壳体的内表面和翼型件轴承的外表面之间径向的芯。芯体突出到旋转轴的中心。线圈缠绕到芯部上以使用由其施加的电流产生的磁吸引力来悬浮旋转轴。联接段被配置为直接将翼型件轴承连接到磁性轴承。

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