会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control
    • 非化学计量CVD介电膜表面钝化方法,用于薄膜粗糙度控制
    • US08524616B2
    • 2013-09-03
    • US12577486
    • 2009-10-12
    • Lance KimKwanghoon Kim
    • Lance KimKwanghoon Kim
    • H01L21/469
    • H01L21/3003H01L21/3105
    • A method is provided for reducing film surface roughness in Chemical Vapor Deposition (CVD) of dielectric films. The method may include removing dangling bonds from a film surface of a CVD dielectric film by a reactant. For reducing a surface roughness of a dielectric film, a further method may passivate a nonstoichiometric film surface of the dielectric film, or of a previous dielectric film, or of the dielectric film and of a previous dielectric film, by a reactant gas in the vapor environment. The dielectric film may include at least one out of the following group: ultraviolet light transparent Silicon Nitride (UVSIN), Silicon Rich Oxide (SRO), Silicon Dioxide (SiO2), Silicon Nitride (Si3N4), Phosphosilicate Glass (PSG), or Silicon Oxynitride (SiON) The reactant gas may include at least one out of the following group: Ammonia (NH3), Hydrogen (H2), Nitrous Oxide (N2O), or Oxygen (O2).
    • 提供了一种用于降低介电膜的化学气相沉积(CVD)中的膜表面粗糙度的方法。 该方法可以包括通过反应物从CVD电介质膜的膜表面去除悬挂键。 为了降低电介质膜的表面粗糙度,另外的方法可以通过蒸汽中的反应气体钝化电介质膜或以前的电介质膜,电介质膜和以前的电介质膜的非化学计量膜表面 环境。 电介质膜可以包括以下组中的至少一个:紫外光透明氮化硅(UVSIN),富氧化硅(SRO),二氧化硅(SiO 2),氮化硅(Si 3 N 4),磷硅玻璃(PSG)或硅 氮氧化物(SiON)反应物气体可以包括以下组中的至少一种:氨(NH 3),氢(H 2),一氧化二氮(N 2 O)或氧(O 2)。
    • 5. 发明申请
    • SYSTEM AND METHOD OF PROTECTING DIGITAL MEDIA CONTENTS
    • 保护数字媒体内容的系统和方法
    • US20120011596A1
    • 2012-01-12
    • US13256993
    • 2010-03-19
    • Eunbum KimKwanghoon Kim
    • Eunbum KimKwanghoon Kim
    • G06F21/24
    • G06F21/10G06F21/121G06F21/6209G06F2221/2107G11B20/00086G11B20/0021H04L63/0428H04L63/08H04N7/1675H04N21/23614H04N21/4348H04N21/4627H04N21/63345H04N21/6377H04N21/835
    • A system and method of protecting digital media contents, which maintain compatibility with an existing system and block any attempt to illegally use the digital media contents having various formats, and which reduce a system load and maximize a possibility of reusing the digital media contents. The system includes a packager for analyzing a format of contents and encoding at least a portion of a data region located in a payload of the contents, and for generating encoded contents by inserting encoding information including at least one of an encoding key value and contents information into the contents; and a digital rights management (DRM) server for receiving a request for a license and the encoding information from an external device which receives the encoded contents, for confirming the encoding information and then generating a license which is used to decode the encoded contents, and for providing the generated license to the external device.
    • 保护与现有系统兼容的数字媒体内容的系统和方法,并且阻止任何非法使用具有各种格式的数字媒体内容的尝试,并且减少系统负载并最大化重用数字媒体内容的可能性。 该系统包括用于分析内容格式并对位于内容的有效载荷中的数据区域的至少一部分进行编码的包装机,并且通过插入包括编码密钥值和内容信息中的至少一个的编码信息来生成编码内容 进入内容; 以及数字版权管理(DRM)服务器,用于从接收编码内容的外部设备接收许可证请求和编码信息,用于确认编码信息,然后生成用于解码编码内容的许可证,以及 用于将生成的许可证提供给外部设备。
    • 7. 发明申请
    • Method of Nonstoichiometric CVD Dielectric Film Surface Passivation for Film Roughness Control
    • 非化学计量CVD方法电介质膜表面钝化膜粗糙度控制
    • US20100120261A1
    • 2010-05-13
    • US12577486
    • 2009-10-12
    • Lance KimKwanghoon Kim
    • Lance KimKwanghoon Kim
    • H01L21/31
    • H01L21/3003H01L21/3105
    • A method is provided for reducing film surface roughness in Chemical Vapor Deposition (CVD) of dielectric films. The method may include removing dangling bonds from a film surface of a CVD dielectric film by a reactant. For reducing a surface roughness of a dielectric film, a further method may passivate a nonstoichiometric film surface of the dielectric film, or of a previous dielectric film, or of the dielectric film and of a previous dielectric film, by a reactant gas in the vapor environment. The dielectric film may include at least one out of the following group: ultraviolet light transparent Silicon Nitride (UVSIN), Silicon Rich Oxide (SRO), Silicon Dioxide (SiO2), Silicon Nitride (Si3N4), Phosphosilicate Glass (PSG), or Silicon Oxynitride (SiON) The reactant gas may include at least one out of the following group: Ammonia (NH3), Hydrogen (H2), Nitrous Oxide (N2O), or Oxygen (O2).
    • 提供了一种用于降低介电膜的化学气相沉积(CVD)中的膜表面粗糙度的方法。 该方法可以包括通过反应物从CVD电介质膜的膜表面去除悬挂键。 为了降低电介质膜的表面粗糙度,另外的方法可以通过蒸汽中的反应气体钝化电介质膜或以前的电介质膜,电介质膜和以前的电介质膜的非化学计量膜表面 环境。 电介质膜可以包括以下组中的至少一个:紫外光透明氮化硅(UVSIN),富氧化硅(SRO),二氧化硅(SiO 2),氮化硅(Si 3 N 4),磷硅玻璃(PSG)或硅 氮氧化物(SiON)反应物气体可以包括以下组中的至少一种:氨(NH 3),氢(H 2),一氧化二氮(N 2 O)或氧(O 2)。