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    • 1. 发明申请
    • Allowance Method for Point to Ground Resistance of Tray
    • 托盘点对地电阻的补偿方法
    • US20070272589A1
    • 2007-11-29
    • US10550056
    • 2004-03-22
    • Kwang SuhJong Kim
    • Kwang SuhJong Kim
    • H01B1/24
    • H01B1/22H01B1/124H01B1/20H01B1/24H01L21/67336
    • Disclosed is a method of providing a desired range of point-to-ground resistance to trays, by making a conductive pathway between both surfaces of the tray after forming and cutting processes. A desired range of point-to-ground resistance of the tray can be achieved by partially or entirely coating a conductive solution composed of a conductive polymersuch as polyaniline, polypyrrole, polythiophene and derivatives such as poly 3,4-ethylenedioxythiophene and mixtures thereof, metal powders and flakes composed of iron, copper, aluminum and other metals, metal oxides such as doped tin oxide and indium oxide, onto cut surfaces of the tray, by attaching a conductive or semi-conductive tape to top and bottom surfaces of the tray so as to cross them, or by using a metal clip. Thereby, a desired range of point-to-ground resistance can be provided to the tray by electrically connecting the top and bottom surfaces of the tray.
    • 公开了一种通过在成形和切割工艺之后在托盘的两个表面之间形成导电通路来向托盘提供所需范围的点对地电阻的方法。 托盘的点对地电阻的期望范围可以通过部分或全部涂覆由导电性聚合物构成的导电溶液来实现,例如聚苯胺,聚吡咯,聚噻吩和衍生物如聚3,4-亚乙基二氧噻吩及其混合物,金属 通过将导电或半导电胶带贴在托盘的顶面和底面上,将由铁,铜,铝和其它金属组成的粉末和薄片,诸如掺杂氧化锡和氧化铟的金属氧化物加到托盘的切割表面上 穿过他们,或通过使用金属夹子。 因此,可以通过电连接托盘的顶表面和底表面来向托盘提供期望的点对地电阻范围。
    • 2. 发明申请
    • Multi-domain liquid crystal display device
    • 多域液晶显示装置
    • US20050105030A1
    • 2005-05-19
    • US10938854
    • 2004-09-13
    • Jeom KimDoo KoJoun LeeJong KimJong KimYoung ChoMi Chu
    • Jeom KimDoo KoJoun LeeJong KimJong KimYoung ChoMi Chu
    • G02F1/1362G02F1/1337
    • G02F1/136213G02F1/136286G02F2001/136218
    • A multi-domain liquid crystal display device comprises first and second substrates facing each other; a liquid crystal layer between the first and second substrates; a plurality of gate bus lines arranged in a first direction on the first substrate and a plurality of data bus lines arranged in a second direction on the first substrate to define a plurality of pixel region; a thin film transistor positioned at a crossing area of the data bus line and the gate bus line, the thin film transistor comprising a gate electrode, a semiconductor layer, and source/drain electrodes; a common-auxiliary electrode comprising at least one electrode in the each pixel region; a plurality of pixel electrodes electrically charged through the thin film transistor; and an alignment layer on at least one substrate between the first and second substrates.
    • 多域液晶显示装置包括彼此面对的第一和第二基板; 第一和第二基板之间的液晶层; 在第一基板上沿第一方向排列的多个栅极总线和在第一基板上沿第二方向布置的多个数据总线,以限定多个像素区域; 位于数据总线和栅极总线的交叉区域的薄膜晶体管,薄膜晶体管包括栅极,半导体层和源极/漏极; 在每个像素区域中包括至少一个电极的公共辅助电极; 通过薄膜晶体管充电的多个像素电极; 以及在所述第一和第二基板之间的至少一个基板上的取向层。
    • 5. 发明授权
    • Methods and apparatuses for providing DRM interoperability
    • 提供DRM互操作性的方法和设备
    • US08386799B2
    • 2013-02-26
    • US12630646
    • 2009-12-03
    • Jong KimSangho LeeHeejin Park
    • Jong KimSangho LeeHeejin Park
    • G06F21/00
    • G06F21/10G06F2221/0728
    • Methods and apparatuses for providing DRM interoperability are provided. Proxy re-encryption technique using bilinear map is used, and the same content can be used in different devices. According to the method of providing DRM interoperability includes in proxy agent with respect to digital rights management (DRM) service providers and device which supports predetermined DRM, first DRM service provider, second DRM service provider, the proxy agent, and the device identify each other, and proxy re-encrypt an interoperable content (IC) and provide the IC to the device. The IC is second-level encrypted by using a key of the first DRM service provider, and the proxy re-encryption is performed by using a proxy key generated from proxy key information provided from the first DRM service provider and the second DRM service provider. Therefore, a problem in which interoperability cannot be guaranteed since a DRM technique depends on a service provider is resolved.
    • 提供了提供DRM互操作性的方法和设备。 使用双线性映射的代理重新加密技术,相同的内容可以在不同的设备中使用。 根据提供DRM互操作性的方法,其包括关于数字权限管理(DRM)服务提供商的代理代理和支持预定DRM的设备,第一DRM服务提供商,第二DRM服务提供商,代理代理和设备彼此识别 ,并且代理重新加密可互操作的内容(IC)并将IC提供给设备。 IC通过使用第一DRM服务提供商的密钥进行二级加密,并且通过使用从第一DRM服务提供商和第二DRM服务提供商提供的代理密钥信息生成的代理密钥来执行代理重新加密。 因此,解决了DRM技术取决于服务提供商的互操作性不能保证的问题。
    • 6. 发明申请
    • Liquid crystal display and driving method thereof
    • 液晶显示及其驱动方法
    • US20080012814A1
    • 2008-01-17
    • US11819487
    • 2007-06-27
    • Jong Kim
    • Jong Kim
    • G09G3/36
    • G09G3/3614G09G2320/0247
    • A liquid crystal display for recognizing a flicker with the naked eyes in a step of inspecting a flicker in the case where a liquid crystal display is driven with a frame frequency of 120 Hz is disclosed. In the liquid crystal display, a timing controller supplies a first frame inversion polarity signal which is used at a first frame inversion and, at the same time supplies a gate start pulse which indicates a supply of a scanning pulse. A frame polarity signal converting means converts a first frame inversion polarity signal into a second frame inversion polarity signal in response to the gate start pulse. And a data driver changes the inputted frame into a second frame inversion in response to the second frame inversion polarity signal.
    • 公开了一种液晶显示器,用于在以120Hz的帧频率驱动液晶显示器的情况下,在检查闪烁的步骤中用肉眼识别闪烁。 在液晶显示器中,定时控制器提供在第一帧反转中使用的第一帧反转极性信号,并且同时提供指示扫描脉冲的提供的栅极起始脉冲。 帧极性信号转换装置响应于门起始脉冲将第一帧反转极性信号转换为第二帧反转极性信号。 并且数据驱动器响应于第二帧反转极性信号将输入的帧改变为第二帧反转。
    • 10. 发明申请
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US20070158726A1
    • 2007-07-12
    • US11647691
    • 2006-12-28
    • Gyu SimJong Kim
    • Gyu SimJong Kim
    • H01L29/94
    • H01L29/66666H01L21/26586H01L29/0634H01L29/0653H01L29/42368H01L29/7828
    • Disclosed are a semiconductor device having a vertical trench gate structure to improve the integration degree and a method of manufacturing the same. The semiconductor device includes an epitaxial layer having a second conductive type on a first conductive type substrate having an active region and an isolation region, a trench in the isolation region, a first conductive type first region in the epitaxial layer at opposite side portions of the trench, an isolation layer at a predetermined depth in the trench, a gate insulation layer along upper side portions of the trench, a gate electrode in an upper portion of the trench, a body region in the active region, a source electrode on the body region, a source region in an upper portion of the body region at opposite side portions of the gate electrode, and a drain electrode at a rear surface of the substrate.
    • 公开了一种具有提高集成度的垂直沟槽栅极结构的半导体器件及其制造方法。 半导体器件包括在第一导电类型衬底上具有第二导电类型的外延层,该第一导电类型衬底具有有源区和隔离区,隔离区中的沟槽,在外延层中的第二导电类型的第一区, 沟槽,沟槽中预定深度处的隔离层,沿着沟槽的上侧部分的栅极绝缘层,沟槽上部的栅极电极,有源区域中的主体区域,主体上的源极电极 区域,位于栅电极的相对侧部的体区的上部的源极区域和位于衬底的背面的漏电极。