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1. 发明授权

US09023607B2 Method for early diagnosis of alzheimer'S disease using phototransistor 有权
标题翻译：使用光电晶体管早期诊断阿尔茨海默氏病的方法
公开(公告)号：US09023607B2
公开(公告)日：2015-05-05
申请号：US13093152
申请日：2011-04-25
申请人： Kwan-Su Kim , Cheol-Joo Chae , Jae-Min Kang , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
发明人： Kwan-Su Kim , Cheol-Joo Chae , Jae-Min Kang , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
IPC分类号： C12Q1/00 , B82Y15/00 , G01N33/68
CPC分类号： B82Y15/00 , G01N33/6896 , G01N2800/2821
摘要： A method for diagnosing Alzheimer's disease by detecting the presence of beta-amyloid in cells using a phototransistor device. Cells that potentially contain beta-amyloid are provided and labeled with a multi-protein that selectively binds to beta-amyloid if present and that includes streptavidin, biotin and polyethylene glycol connected in sequence with the streptavidin being bound to a magnetic bead and the polyethylene glycol being bound to the beta-amyloid, to provide labeled cells. A phototransistor device including a channel layer is provided and a difference in photocurrent determined corresponding to incident light measured before and after selectively fixing the labeled cells on a surface of the channel layer by applying an external magnetic field effective to attract the magnetic bead to the phototransistor device through a permanent magnet positioned below the channel. Any difference between the first and second photocurrents indicates the presence of, and optionally amount of, labeled beta-amyloid in the cells.
摘要翻译：一种通过使用光电晶体管装置检测细胞中β-淀粉样蛋白的存在来诊断阿尔茨海默病的方法。提供可能含有β-淀粉样蛋白的细胞并用选择性结合β-淀粉样蛋白（如果存在）的多蛋白标记，并且包括与链霉抗生物素蛋白结合到磁珠上的序列连接的链霉抗生物素蛋白，生物素和聚乙二醇，并且聚乙二醇结合β-淀粉样蛋白，以提供标记细胞。提供了包括沟道层的光电晶体管装置，并且通过施加有效吸引磁珠到光电晶体管的外部磁场选择性地将标记的单元选择性地固定在通道层的表面之前和之后测量的入射光确定的光电流差异设备通过位于通道下方的永磁体。第一和第二光电流之间的任何差异表明在细胞中存在和任选量的标记的β-淀粉样蛋白。

2. 发明申请

US20110244484A1 METHOD OF DIAGNOSING ALZHEIMER'S DISEASE USING GIANT MAGNETORESISTANCE SENSOR AND MAGNETIC BEAD-POLYPROTEIN COMPLEX FOR DIAGNOSING ALZHEIMER'S DISEASE 审中-公开
标题翻译：使用大型磁阻传感器和磁珠 - 聚氨酯复合物诊断阿尔茨海默病的方法
公开(公告)号：US20110244484A1
公开(公告)日：2011-10-06
申请号：US13078312
申请日：2011-04-01
申请人： Cheol-Joo CHAE , Kwan-Su Kim , Jae-Min Kang , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
发明人： Cheol-Joo CHAE , Kwan-Su Kim , Jae-Min Kang , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
IPC分类号： G01N33/53 , C07K14/36 , C07K14/47
CPC分类号： C07K17/14 , C07K14/4711 , G01N33/54333 , G01N33/6896
摘要： Provided are a method of diagnosing Alzheimer's disease using a giant magnetoresistance sensor and a magnetic bead-polyprotein complex for diagnosing Alzheimer's disease. The method of diagnosing Alzheimer's disease using the giant magnetoresistance sensor may be applied to diagnose Alzheimer's disease more easily and simply using the giant magnetoresistance sensor than using conventional fluorescent materials or genetic analyses, and the magnetic bead-polyprotein complex may be mass-produced as a diagnostic biosensor for Alzheimer's disease, and thus to be useful to monitor and treat Alzheimer's disease.
摘要翻译：提供了使用巨磁电阻传感器和用于诊断阿尔茨海默氏病的磁珠 - 多聚蛋白复合物来诊断阿尔茨海默病的方法。使用巨磁电阻传感器诊断阿尔茨海默病的方法可以应用于使用巨磁电阻传感器比使用常规荧光材料或遗传分析来诊断阿尔茨海默氏病，并且磁珠 - 多聚蛋白复合物可以批量生产为用于阿尔茨海默病的诊断性生物传感器，因此可用于监测和治疗阿尔茨海默氏病。

3. 发明授权

US08647394B2 Method of fabricating CIS or CIGS thin film 失效
标题翻译：制造CIS或CIGS薄膜的方法
公开(公告)号：US08647394B2
公开(公告)日：2014-02-11
申请号：US13070099
申请日：2011-03-23
申请人： Jung-Min Cho , Eun-Jin Bae , Ki-Bong Song , Jeong-Dae Suh , Myung-Ae Chung
发明人： Jung-Min Cho , Eun-Jin Bae , Ki-Bong Song , Jeong-Dae Suh , Myung-Ae Chung
IPC分类号： C01D3/00
CPC分类号： C03C17/001 , C03C17/36 , C03C17/3605 , C03C17/3628 , C03C17/3631 , C03C17/3649 , C03C17/3678 , C03C2218/111 , H01L31/0322 , Y02E10/541
摘要： Disclosed herein is a method of fabricating a CIS or CIGS thin film, comprising: forming, on a substrate, a seed particle layer comprising copper-indium-compound seed particles comprising copper (Cu); indium (In); and at least one selected from the group consisting of gallium (Ga), sulfur (S) and selenium (Se), applying, on the seed particle layer, a water-soluble precursor solution comprising: a water-soluble copper (Cu) precursor; a water-soluble indium (In) precursor; and at least one selected from the group consisting of a water-soluble gallium (Ga) precursor, a water-soluble sulfur (S) precursor and a water-soluble selenium (Se) precursor, and forming a thin film at high temperature.
摘要翻译：本文公开了一种制造CIS或CIGS薄膜的方法，包括：在基底上形成包含铜（Cu）的铜 - 铟 - 复合种子颗粒的种子颗粒层; 铟（In）; 和选自镓（Ga），硫（S）和硒（Se）的至少一种，在种子颗粒层上施加水溶性前体溶液，其包含水溶性铜（Cu）前体 ; 水溶性铟（In）前体; 和选自水溶性镓（Ga）前体，水溶性硫（S）前体和水溶性硒（Se）前体）中的至少一种，并在高温下形成薄膜。

4. 发明授权

US08501524B2 Method of manufacturing thin-film light-absorbing layer, and method of manufacturing thin-film solar cell using the same 失效
标题翻译：薄膜光吸收层的制造方法以及使用该薄膜太阳能电池的薄膜太阳能电池的制造方法
公开(公告)号：US08501524B2
公开(公告)日：2013-08-06
申请号：US13034262
申请日：2011-02-24
申请人： Jung-Min Cho , Eun-Jin Bae , Chang-Woo Ham , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
发明人： Jung-Min Cho , Eun-Jin Bae , Chang-Woo Ham , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
IPC分类号： H01L21/00
CPC分类号： H01L31/0322 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/022466 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Disclosed is a method of manufacturing a thin-film light-absorbing layer using spraying, including mixing precursor solutions comprising CuCl2, InCl3 and SeC(NH2)2 under a nitrogen atmosphere at room temperature thus preparing a mixture solution; spraying the mixture solution on a substrate and drying it, thus forming a thin film; and selenizing the thin film under a selenium atmosphere. A method of manufacturing a thin-film solar cell is also provided, which includes forming a back contact layer on a glass substrate using sputtering; forming a light-absorbing layer on the back contact layer using spraying; forming a buffer layer on the light-absorbing layer using chemical vapor deposition; forming a window layer on the buffer layer using sputtering; and forming an upper electrode layer on the window layer.
摘要翻译：公开了一种使用喷雾制造薄膜光吸收层的方法，包括在室温下在氮气气氛下混合包含CuCl 2，InCl 3和SeC（NH 2）2的前体溶液，从而制备混合溶液; 将混合溶液喷在基片上并干燥，形成薄膜; 并在硒气氛下对薄膜进行硒化。还提供了一种制造薄膜太阳能电池的方法，其包括使用溅射在玻璃基板上形成背接触层; 使用喷雾在所述背面接触层上形成光吸收层; 使用化学气相沉积在所述光吸收层上形成缓冲层; 使用溅射在缓冲层上形成窗口层; 并在窗口层上形成上电极层。

5. 发明申请

US20120051998A1 METHOD OF FABRICATING CIS OR CIGS THIN FILM 失效
标题翻译：制造CIS或CIGS薄膜的方法
公开(公告)号：US20120051998A1
公开(公告)日：2012-03-01
申请号：US13070099
申请日：2011-03-23
申请人： Jung-Min CHO , Eun-Jin Bae , Ki-Bong Song , Jeong-Dae Suh , Myung-Ae Chung
发明人： Jung-Min CHO , Eun-Jin Bae , Ki-Bong Song , Jeong-Dae Suh , Myung-Ae Chung
IPC分类号： H01L31/0352 , C01B17/00 , C01B19/00
CPC分类号： C03C17/001 , C03C17/36 , C03C17/3605 , C03C17/3628 , C03C17/3631 , C03C17/3649 , C03C17/3678 , C03C2218/111 , H01L31/0322 , Y02E10/541
摘要： Disclosed herein is a method of fabricating a CIS or CIGS thin film, comprising: forming, on a substrate, a seed particle layer comprising copper-indium-compound seed particles comprising copper (Cu); indium (In); and at least one selected from the group consisting of gallium (Ga), sulfur (S) and selenium (Se), applying, on the seed particle layer, a water-soluble precursor solution comprising: a water-soluble copper (Cu) precursor; a water-soluble indium (In) precursor; and at least one selected from the group consisting of a water-soluble gallium (Ga) precursor, a water-soluble sulfur (S) precursor and a water-soluble selenium (Se) precursor, and forming a thin film at high temperature.
摘要翻译：本文公开了一种制造CIS或CIGS薄膜的方法，包括：在基底上形成包含铜（Cu）的铜 - 铟 - 复合种子颗粒的种子颗粒层; 铟（In）; 和选自镓（Ga），硫（S）和硒（Se）的至少一种，在种子颗粒层上施加水溶性前体溶液，其包含水溶性铜（Cu）前体 ; 水溶性铟（In）前体; 和选自水溶性镓（Ga）前体，水溶性硫（S）前体和水溶性硒（Se）前体）中的至少一种，并在高温下形成薄膜。

6. 发明申请

US20110209763A1 METHOD OF MANUFACTURING THIN-FILM LIGHT-ABSORBING LAYER, AND METHOD OF MANUFACTURING THIN-FILM SOLAR CELL USING THE SAME 失效
标题翻译：制造薄膜吸收层的方法及使用其制造薄膜太阳能电池的方法
公开(公告)号：US20110209763A1
公开(公告)日：2011-09-01
申请号：US13034262
申请日：2011-02-24
申请人： Jung-Min CHO , Eun-Jin Bae , Chang-Woo Ham , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
发明人： Jung-Min CHO , Eun-Jin Bae , Chang-Woo Ham , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
IPC分类号： H01L31/0272 , H01L31/0264
CPC分类号： H01L31/0322 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/022466 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Disclosed is a method of manufacturing a thin-film light-absorbing layer using spraying, including mixing precursor solutions comprising CuCl2, InCl3 and SeC(NH2)2 under a nitrogen atmosphere at room temperature thus preparing a mixture solution; spraying the mixture solution on a substrate and drying it, thus forming a thin film; and selenizing the thin film under a selenium atmosphere. A method of manufacturing a thin-film solar cell is also provided, which includes forming a back contact layer on a glass substrate using sputtering; forming a light-absorbing layer on the back contact layer using spraying; forming a buffer layer on the light-absorbing layer using chemical vapor deposition; forming a window layer on the buffer layer using sputtering; and forming an upper electrode layer on the window layer.
摘要翻译：公开了一种使用喷雾制造薄膜光吸收层的方法，包括在室温下在氮气气氛下混合包含CuCl 2，InCl 3和SeC（NH 2）2的前体溶液，从而制备混合溶液; 将混合溶液喷在基片上并干燥，形成薄膜; 并在硒气氛下对薄膜进行硒化。还提供了一种制造薄膜太阳能电池的方法，其包括使用溅射在玻璃基板上形成背接触层; 使用喷雾在所述背面接触层上形成光吸收层; 使用化学气相沉积在所述光吸收层上形成缓冲层; 使用溅射在缓冲层上形成窗口层; 并在窗口层上形成上电极层。

7. 发明授权

US5770470A High temperature superconducting electric field effect device and a method for fabricating the same 失效
标题翻译：高温超导电场效应器及其制造方法
公开(公告)号：US5770470A
公开(公告)日：1998-06-23
申请号：US694300
申请日：1996-08-08
申请人： Gun-Yong Sung , Jeong-Dae Suh
发明人： Gun-Yong Sung , Jeong-Dae Suh
IPC分类号： H01L39/22 , H01L27/18 , H01L39/14 , H01L39/24 , H01B12/00
CPC分类号： H01L39/146 , Y10S505/922 , Y10S505/923
摘要： The invention relates to a high temperature superconducting electric field effect device which creates a dual grain boundary on a superconducting thin film and employs it as a channel. The device comprises a substrate, a bottom layer formed on a predetermined region of the bottom layer, a dual grain boundary channel region formed on the bottom layer, a high temperature source and a drain formed at both end portions of the channel region on the substrate, a high temperature superconducting thin film channel layer formed a predetermined region on the source, the drain and the substrate, dual grain boundaries formed on the high temperature superconducting thin film channel layer, and a gate insulating layer formed on the dual grain boundary channel region.
摘要翻译：本发明涉及一种在超导薄膜上产生双晶边界并将其用作沟道的高温超导电场效应装置。该器件包括衬底，形成在底层的预定区域上的底层，形成在底层上的双晶界沟道区，在衬底上的沟道区的两个端部处形成的高温源和漏极，在源极，漏极和衬底上形成预定区域的高温超导薄膜沟道层，形成在高温超导薄膜沟道层上的双晶边界，以及形成在双晶界面区域上的栅极绝缘层。

8. 发明授权

US5750474A Method for manufacturing a superconductor-insulator-superconductor Josephson tunnel junction 失效
标题翻译：制造超导体 - 绝缘体 - 超导体约瑟夫逊隧道结的方法
公开(公告)号：US5750474A
公开(公告)日：1998-05-12
申请号：US708499
申请日：1996-09-05
申请人： Gun-Yong Sung , Jeong-Dae Suh
发明人： Gun-Yong Sung , Jeong-Dae Suh
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/223 , H01L39/2496 , Y10S505/702 , Y10S505/728
摘要： A superconductor-insulator-superconductor Josephson tunnel junction, comprising: a single crystalline substrate having a perovskite crystal structure; a template layer formed of a b-axis oriented PBCO thin film on the substrate; and a trilayer structure consisting of a lower electrode, a barrier layer and an upper electrode, which serve as a superconductor, an insulator and a superconductor, respectively, the lower electrode and the upper electrode each being formed of an a-axis oriented YBCO superconducting thin film and having an oblique junction edge at an angle of 30.degree. to 70.degree., the barrier layer being formed of an insulating thin film between the two superconducting electrodes, can be operated at a low power with an exceptional speed in calculation and data processing.
摘要翻译：超导体 - 绝缘体 - 超导体约瑟夫逊隧道结，包括：具有钙钛矿晶体结构的单晶衬底; 在基板上由b轴取向的PBCO薄膜形成的模板层; 以及分别由用作超导体，绝缘体和超导体的下电极，阻挡层和上电极组成的三层结构，所述下电极和上电极各自由a轴取向的YBCO超导体薄膜，并且在30°至70°的角度具有倾斜的接合边缘，阻挡层由两个超导电极之间的绝缘薄膜形成，可以在计算和数据处理中以非常高的速度以低功率运行。

9. 发明授权

US5801393A Superconductor-insulator-superconductor Josephson tunnel junction and method therefor 失效
标题翻译：超导体 - 绝缘体 - 超导体约瑟夫逊隧道结及其方法
公开(公告)号：US5801393A
公开(公告)日：1998-09-01
申请号：US840070
申请日：1997-04-24
申请人： Gun-Yong Sung , Jeong-Dae Suh
发明人： Gun-Yong Sung , Jeong-Dae Suh
IPC分类号： H01L39/22 , H01L39/24 , H01L29/06
CPC分类号： H01L39/223 , H01L39/2496 , Y10S505/702 , Y10S505/728
摘要： A superconductor-insulator-superconductor Josephson tunnel junction, comprising: a single crystalline substrate having a perovskite crystal structure; a template layer formed of a b-axis oriented PBCO thin film on the substrate; and a trilayer structure consisting of a lower electrode, a barrier layer and an upper electrode, which serve as a superconductor, an insulator and a superconductor, respectively, the lower electrode and the upper electrode each being formed of an a-axis oriented YBCO superconducting thin film and having an oblique junction edge at an angle of 30.degree. to 70.degree., the barrier layer being formed of an insulating thin film between the two superconducting electrodes, can be operated at a low power with an exceptional speed in calculation and data processing.
摘要翻译：超导体 - 绝缘体 - 超导体约瑟夫逊隧道结，包括：具有钙钛矿晶体结构的单晶衬底; 在基板上由b轴取向的PBCO薄膜形成的模板层; 以及分别由用作超导体，绝缘体和超导体的下电极，阻挡层和上电极组成的三层结构，所述下电极和上电极各自由a轴取向的YBCO超导体薄膜，并且在30°至70°的角度具有倾斜的接合边缘，阻挡层由两个超导电极之间的绝缘薄膜形成，可以在计算和数据处理中以非常高的速度以低功率运行。

10. 发明授权

US5846846A Method for making a superconducting field-effect device with grain boundary channel 失效
标题翻译：制造具有晶界通道的超导场效应装置的方法
公开(公告)号：US5846846A
公开(公告)日：1998-12-08
申请号：US560962
申请日：1995-11-20
申请人： Jeong-Dae Suh , Gun-Yong Sung
发明人： Jeong-Dae Suh , Gun-Yong Sung
IPC分类号： H01L39/00 , H01L29/78 , H01L39/22 , H01L39/24 , H01L21/00
CPC分类号： H01L39/2496 , H01L39/228
摘要： Disclosed is a method for making a superconducting field-effect device with a grain boundary channel, the method comprising the steps of depositing a first superconducting thin film on a substrate; patterning the first superconducting thin film to form a patterned superconducting thin film having an opening; depositing a template layer thereon; selectively etching back the template layer to form a patterned template layer; growing a second superconducting thin film to form a grain boundary therebetween; depositing an insulating layer on the second superconducting thin film to protect the second superconducting thin film from degrading in property in the air; selectively etching back the insulating layer to form a patterned insulating layer; forming a gate insulating layer on the patterned insulating layer; and coating metal electrodes thereon, source/drain being formed respectively on the etched portions, and a gate electrode being formed on the deposited portion of the gate insulating layer directly above the grain boundary. In the superconducting FET manufactured thus, since a gate electrode is formed directly above a grain boundary, current flowing between source and drain can be controlled by a voltage applied through an gate insulating layer. Also, since the grain boundary serving as a channel can be formed in a cheaper oxide crystal substrate by variation in a growing temperature of thin film without using an expensive by-crystal substrate, a high-temperature superconducting FET can be economically fabricated.
摘要翻译：公开了一种制造具有晶界通道的超导场效应器件的方法，该方法包括以下步骤：在衬底上沉积第一超导薄膜; 图案化第一超导薄膜以形成具有开口的图案化超导薄膜; 在其上沉积模板层; 选择性地蚀刻模板层以形成图案化的模板层; 生长第二超导薄膜以在其间形成晶界; 在所述第二超导薄膜上沉积绝缘层以保护所述第二超导薄膜不会降低空气中的性能; 选择性地蚀刻回绝缘层以形成图案化的绝缘层; 在所述图案化绝缘层上形成栅极绝缘层; 并在其上涂覆金属电极，分别在蚀刻部分上形成源极/漏极，以及形成在晶界正上方的栅极绝缘层的沉积部分上的栅电极。在这样制造的超导FET中，由于栅电极直接形成在晶界之上，所以可以通过栅极绝缘层施加的电压来控制在源极和漏极之间流动的电流。此外，由于可以通过在不使用昂贵的晶体基板的情况下通过薄膜的生长温度的变化而在较便宜的氧化物晶体基板中形成作为沟道的晶界，因此可以经济地制造高温超导FET。

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