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    • 1. 发明授权
    • Controlled temperature coefficient thin-film circuit element
    • 受控温度系数薄膜电路元件
    • US4464646A
    • 1984-08-07
    • US281169
    • 1981-07-07
    • Kurt BurgerHeinz FriedrichHeiko GrunerKarl-Otto LinnErich Zabler
    • Kurt BurgerHeinz FriedrichHeiko GrunerKarl-Otto LinnErich Zabler
    • H01C17/06G01K7/18H01C7/06H01C17/232H01L27/01H01C1/12
    • G01K7/183H01C17/232H01C7/06
    • To form a temperature sensor, for example suitable in an automotive vehicle, to determine ambient temperatures, or to provide a temperature compensated thin-film circuit, for example for incorporation with an oscillator circuit, two stable thin-film layers are applied to a non-conductive substrate, the layers being capable of being etched. The overall temperature coefficient of resistance can be matched to a predetermined value by selective interconnection of at least two thin-film resistance elements formed by the thin films, of which one thin film resistance element for example comprises a nickel layer over a tantalum base, with a predetermined temperature coefficient of resistance, the other resistance element merely being the tantalum layer with essentially zero temperature coefficient of resistance, the overall temperature coefficient of resistance of the combination being determined by adjustment of the relative resistance values after measurement of the temperature coefficient of resistance of the nickel-tantalum layer to determine its actual temperature coefficient so that, in spite of tolerances in the manufacture of the thin films, interchangeable elements of highly accurate overall resistance and temperature coefficient of resistance values can be obtained.
    • 为了形成例如适合于机动车辆的温度传感器,以确定环境温度,或者提供温度补偿薄膜电路,例如用于与振荡器电路结合,将两个稳定的薄膜层施加到非 - 导电衬底,这些层能够被蚀刻。 电阻的整体温度系数可以通过由薄膜形成的至少两个薄膜电阻元件的选择性互连来匹配,其中一个薄膜电阻元件例如包括在钽基底上的镍层, 电阻的预定温度系数,另一个电阻元件仅仅是具有基本上为零的电阻温度系数的钽层,组合的电阻的总体温度系数是通过测量电阻温度系数后的相对电阻值的调整来确定的 以确定其实际温度系数,使得尽管制造薄膜的公差尽可能地获得高度精确的总电阻和电阻温度系数的可互换元件。
    • 3. 发明授权
    • Thin-film strain gauge
    • 薄膜应变片
    • US4522067A
    • 1985-06-11
    • US420258
    • 1982-09-17
    • Kurt BurgerHeiko Gruner
    • Kurt BurgerHeiko Gruner
    • G01L1/22G01L9/04H01C17/12
    • G01L1/2287Y10T29/49099Y10T29/49103
    • A thin-film strain gauge and a method for producing it are proposed; the strain gauge is advantageously capable of integration into a thin-film circuit. The strain gauge comprises an elastically deformable spring element in combination with at least one elongation-sensitive resistor. The resistor disposition (R1-R4), the low-impedance connections (L11-L42) between the various resistance regions and the associated connection tracks (L5-L8) are applied in a vacuum process, preferably by cathode sputtering. The low-impedance connections (L11-L42) and the connection tracks (L5-L8) are of material which, although different from the material making up the actual resistance region, still has approximately the same temperature coefficient of resistance, so as to preclude errors caused by temperature.
    • PCT No.PCT / DE81 / 00228 Sec。 371日期1982年9月17日 102(e)日期1982年9月17日PCT提交1981年12月18日PCT公布。 公开号WO82 / 03458 日期为1982年10月14日。提出了薄膜应变片及其制造方法。 应变计有利地能够集成到薄膜电路中。 应变计包括与至少一个伸长敏感电阻器组合的可弹性变形的弹簧元件。 电阻器配置(R1-R4),各种电阻区域和相关联的连接磁道(L5-L8)之间的低阻抗连接(L11-L42)优选通过阴极溅射在真空工艺中施加。 低阻抗连接(L11-L42)和连接轨迹(L5-L8)是材料,尽管与构成实际电阻区域的材料不同,仍然具有大致相同的电阻温度系数,从而排除 温度造成的误差