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1. 发明授权

US06225160B1 Method of manufacturing bottom electrode of capacitor 有权
标题翻译：制造电容器底电极的方法
公开(公告)号：US06225160B1
公开(公告)日：2001-05-01
申请号：US09295067
申请日：1999-04-20
申请人： Kuo-Chi Lin , Kuo-Tai Huang , Da-Wen Shia , Kun-Chi Lin
发明人： Kuo-Chi Lin , Kuo-Tai Huang , Da-Wen Shia , Kun-Chi Lin
IPC分类号： H01L218242
CPC分类号： H01L28/60 , H01L21/76895 , H01L27/10852 , H01L28/84
摘要： A method of manufacturing a bottom electrode of a capacitor. A first dielectric layer is formed on a substrate. A cap layer is formed on the first dielectric layer. A second dielectric layer is formed on the cap layer. A node contact hole is formed to penetrate through the second dielectric layer, the cap layer and the first dielectric layer. A liner layer is formed on a sidewall of the node contact hole. A restraining layer is formed on the second dielectric layer. A patterned conductive layer is formed on a portion of the restraining layer and fills the node contact hole. A selective hemispherical grained layer is formed on the patterned conductive layer.
摘要翻译：一种制造电容器的底部电极的方法。在基板上形成第一电介质层。在第一电介质层上形成覆盖层。在盖层上形成第二电介质层。形成节点接触孔以穿透第二介电层，盖层和第一介电层。衬垫层形成在节点接触孔的侧壁上。在第二电介质层上形成限制层。在限制层的一部分上形成有图案的导电层，并填充节点接触孔。在图案化的导电层上形成选择性半球形纹理层。

2. 发明授权

US06065869A Method of in-line temperature monitoring 失效
标题翻译：在线温度监测方法
公开(公告)号：US06065869A
公开(公告)日：2000-05-23
申请号：US356962
申请日：1999-07-19
申请人： Jen-Tsung Lin , Da-Wen Shia , Tsung-Hsien Han , Eddie Chen
发明人： Jen-Tsung Lin , Da-Wen Shia , Tsung-Hsien Han , Eddie Chen
IPC分类号： G01K7/16
CPC分类号： G01K7/16
摘要： A method of in-line temperature monitoring. At least two control wafers and a monitor wafer are provided. A sacrificial layer is formed on each control wafer and the monitor wafer. Ions are implanted under a predetermined condition in the sacrificial layers. Thermal processes are performed on the control wafers at a higher and the lower limit of a target temperature to enable ions to move partially from the sacrificial layer to the control wafers. The sacrificial layers on the control wafers are subsequently removed. The sheet resistance of the control wafers is measured to obtain a first and the second resistance value, which respectively correspond to the first and second temperatures. A wafer and a monitor wafer are provided. A thermal process is performed on the monitor wafer and the wafer at the target temperature. The sacrificial layer of the monitor wafer is removed, and the sheet resistance of the monitor wafer is subsequently measured. When the sheet resistance of the monitor wafer is between the first and the second sheet resistance, the temperature is controlled between the first and second temperature, that is, a tolerable temperature range of the target temperature.
摘要翻译：一种在线温度监测方法。提供至少两个控制晶片和监视晶片。在每个控制晶片和监视器晶片上形成牺牲层。在牺牲层中的预定条件下植入离子。在目标温度的较高和下限处，在控制晶片上进行热处理，以使离子能够部分地从牺牲层移动到控制晶片。随后去除控制晶片上的牺牲层。测量控制晶片的薄层电阻以获得分别对应于第一和第二温度的第一和第二电阻值。提供晶片和监视器晶片。在目标温度下在监测晶片和晶片上进行热处理。去除监测晶片的牺牲层，随后测量监测晶片的薄层电阻。当监视器晶片的薄层电阻处于第一和第二薄层电阻之间时，在第一温度和第二温度之间，即目标温度的允许温度范围内控制温度。

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