会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • LIQUID CRYSTAL DISPLAY DEVICE
    • 液晶显示装置
    • US20130063686A1
    • 2013-03-14
    • US13699122
    • 2011-05-19
    • Kunihiro TashiroHideki FujimotoYoshihito Hara
    • Kunihiro TashiroHideki FujimotoYoshihito Hara
    • G02F1/1343G02F1/1335G02F1/1337
    • G02F1/134336G02F1/133707G02F1/133753G02F2001/133757G02F2001/134318
    • A liquid crystal display device (100) of the present invention has a plurality of pixels (P) which are in a matrix arrangement and includes: a first substrate (1) which includes a pixel electrode (12) which is provided in each pixel; a second substrate (2) which opposes the first substrate; and a vertical alignment liquid crystal layer (3) which is provided between these substrates, wherein light that is incident on the liquid crystal layer is circularly-polarized light, and the liquid crystal layer modulates the circularly-polarized light, thereby realizing display. The pixel electrode includes at least one cruciform trunk portion (12a), a plurality of branch portions (12b) extending from the at least one cruciform trunk portion in a direction of about 45°, and a plurality of slits (12c) provided between the plurality of branch portions. The second substrate includes a plurality of counter electrodes (22) which are electrically independent of each other in each pixel. According to the present invention, in a liquid crystal display device which includes a vertical alignment liquid crystal, the γ shift can be sufficiently reduced, and decrease of the transmittance can be prevented.
    • 本发明的液晶显示装置(100)具有矩阵排列的多个像素(P),包括:第一基板(1),其包括设置在各像素中的像素电极(12) 与第一基板相对的第二基板(2) 以及设置在这些基板之间的垂直取向液晶层(3),其中入射到液晶层的光是圆偏振光,并且液晶层调制圆偏振光,从而实现显示。 像素电极包括至少一个十字形主干部分(12a),从至少一个十字形主干部分沿大约45°的方向延伸的多个分支部分(12b)和多个狭缝(12c) 多个分支部分。 第二基板包括在每个像素中彼此电独立的多个对置电极(22)。 根据本发明,在包括垂直取向液晶的液晶显示装置中,可以充分地减小γ偏移,并且可以防止透射率的降低。
    • 2. 发明申请
    • LIQUID CRYSTAL DISPLAY DEVICE
    • 液晶显示装置
    • US20120223931A1
    • 2012-09-06
    • US13509380
    • 2010-08-30
    • Kunihiro TashiroShogo NishiwakiHideki FujimotoYoshihito Hara
    • Kunihiro TashiroShogo NishiwakiHideki FujimotoYoshihito Hara
    • G09G5/00G09G3/36
    • G02F1/134309G02F2001/134318
    • An object of the present invention is to provide a liquid crystal display device which has a high luminance and excellent display quality. In a liquid crystal display device of the present invention, a common electrode (45) includes a first common electrode (45a) and a second common electrode (45b), and a pixel electrode (60) includes a first trunk portion (61a), a second trunk portion (61b), a plurality of first branch portions (62a) extending in the first direction, a plurality of second branch portions (62b) extending in the second direction, a plurality of third branch portions (62c) extending in the third direction, and a plurality of fourth branch portions (62d) extending in the fourth direction. When a pixel is viewed from a direction perpendicular to a plane of the TFT substrate (10), a boundary between the first common electrode (45a) and the second common electrode (45b) extends over the first trunk portion (61a) of the pixel electrode (60) and extends in a same direction as an extending direction of the first trunk portion (61a).
    • 本发明的目的是提供一种具有高亮度和优异的显示质量的液晶显示装置。 在本发明的液晶显示装置中,公共电极(45)包括第一公共电极(45a)和第二公共电极(45b),像素电极(60)具有第一主体部(61a) 第二主体部分(61b),沿第一方向延伸的多个第一分支部分(62a),沿第二方向延伸的多个第二分支部分(62b),在第二方向上延伸的多个第三分支部分(62c) 以及沿第四方向延伸的多个第四分支部分(62d)。 当从垂直于TFT基板(10)的平面的方向观察像素时,第一公共电极(45a)和第二公共电极(45b)之间的边界在像素的第一主体部分(61a)上延伸 电极(60)并且沿与第一主干部分(61a)的延伸方向相同的方向延伸。
    • 3. 发明授权
    • Liquid crystal display device
    • 液晶显示装置
    • US09081240B2
    • 2015-07-14
    • US13699122
    • 2011-05-19
    • Kunihiro TashiroHideki FujimotoYoshihito Hara
    • Kunihiro TashiroHideki FujimotoYoshihito Hara
    • G02F1/1343G02F1/1337
    • G02F1/134336G02F1/133707G02F1/133753G02F2001/133757G02F2001/134318
    • A liquid crystal display device (100) of the present invention has a plurality of pixels (P) which are in a matrix arrangement and includes: a first substrate (1) which includes a pixel electrode (12) which is provided in each pixel; a second substrate (2) which opposes the first substrate; and a vertical alignment liquid crystal layer (3) which is provided between these substrates, wherein light that is incident on the liquid crystal layer is circularly-polarized light, and the liquid crystal layer modulates the circularly-polarized light, thereby realizing display. The pixel electrode includes at least one cruciform trunk portion (12a), a plurality of branch portions (12b) extending from the at least one cruciform trunk portion in a direction of about 45°, and a plurality of slits (12c) provided between the plurality of branch portions. The second substrate includes a plurality of counter electrodes (22) which are electrically independent of each other in each pixel. According to the present invention, in a liquid crystal display device which includes a vertical alignment liquid crystal, the γ shift can be sufficiently reduced, and decrease of the transmittance can be prevented.
    • 本发明的液晶显示装置(100)具有矩阵排列的多个像素(P),包括:第一基板(1),其包括设置在各像素中的像素电极(12) 与第一基板相对的第二基板(2) 以及设置在这些基板之间的垂直取向液晶层(3),其中入射到液晶层的光是圆偏振光,并且液晶层调制圆偏振光,从而实现显示。 像素电极包括至少一个十字形主干部分(12a),从至少一个十字形主干部分沿大约45°的方向延伸的多个分支部分(12b)和多个狭缝(12c) 多个分支部分。 第二基板包括在每个像素中彼此电独立的多个对置电极(22)。 根据本发明,在包括垂直取向液晶的液晶显示装置中,可以充分地减小γ偏移,并且可以防止透射率的降低。
    • 6. 发明申请
    • SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF
    • 半导体器件及其制造方法
    • US20130153904A1
    • 2013-06-20
    • US13819352
    • 2011-08-26
    • Jun NishimuraYukinobu NakataYoshihito Hara
    • Jun NishimuraYukinobu NakataYoshihito Hara
    • H01L27/04H01L21/82
    • H01L27/04G02F1/133345G02F1/136213G02F1/136227G02F1/1368H01L21/82H01L27/1225H01L27/1255
    • A semiconductor device (1000) includes a thin film transistor having a gate line (3a), source and drain lines (13as, 13ad), and an island-like oxide semiconductor layer (7), and a capacitor element (105) having a first electrode (3b) formed from the same conductive film as the gate line (3s), a second electrode (13b) formed from the same conductive film as the source line (13as), and a dielectric layer positioned between the first electrode and the second electrode. A gate insulating film (5) has a layered structure including a first insulating layer (5A) containing an oxide and a second insulating layer (5B) disposed on the side closer to the gate electrode closer than the first insulating film and having a higher dielectric constant than the first insulating film, the layered structure being in contact with the oxide semiconductor layer (7). The dielectric layer includes the second insulating film (5B) but does not include the first insulating film (5A). Accordingly, the deterioration of the oxide semiconductor layer due to oxygen deficiency can be suppressed without reducing the capacitance value of the capacitor element).
    • 半导体器件(1000)包括具有栅极线(3a),源极和漏极线(13as,13ad)和岛状氧化物半导体层(7)的薄膜晶体管,以及电容器元件(105),其具有 由与栅极线(3s)相同的导电膜形成的第一电极(3b),由与源极线(13as)相同的导电膜形成的第二电极(13b)以及位于第一电极 第二电极。 栅极绝缘膜(5)具有层叠结构,该层叠结构具有包含氧化物的第一绝缘层(5A)和位于比第一绝缘膜更靠近栅电极的一侧的第二绝缘层(5B),并且具有较高的电介质 与第一绝缘膜恒定,层状结构与氧化物半导体层(7)接触。 电介质层包括第二绝缘膜(5B),但不包括第一绝缘膜(5A)。 因此,可以抑制氧缺陷导致的氧化物半导体层的劣化,而不会降低电容器元件的电容值)。
    • 10. 发明授权
    • Semiconductor device and process for production thereof
    • 半导体装置及其制造方法
    • US08633481B2
    • 2014-01-21
    • US13819352
    • 2011-08-26
    • Jun NishimuraYukinobu NakataYoshihito Hara
    • Jun NishimuraYukinobu NakataYoshihito Hara
    • H01L29/10H01L29/12
    • H01L27/04G02F1/133345G02F1/136213G02F1/136227G02F1/1368H01L21/82H01L27/1225H01L27/1255
    • A semiconductor device (1000) includes a thin film transistor having a gate line (3a), source and drain lines (13as, 13ad), and an island-like oxide semiconductor layer (7), and a capacitor element (105) having a first electrode (3b) formed from the same conductive film as the gate line (3s), a second electrode (13b) formed from the same conductive film as the source line (13as), and a dielectric layer positioned between the first electrode and the second electrode. A gate insulating film (5) has a layered structure including a first insulating layer (5A) containing an oxide and a second insulating layer (5B) disposed on the side closer to the gate electrode closer than the first insulating film and having a higher dielectric constant than the first insulating film, the layered structure being in contact with the oxide semiconductor layer (7). The dielectric layer includes the second insulating film (5B) but does not include the first insulating film (5A). Accordingly, the deterioration of the oxide semiconductor layer due to oxygen deficiency can be suppressed without reducing the capacitance value of the capacitor element).
    • 半导体器件(1000)包括具有栅极线(3a),源极和漏极线(13as,13ad)和岛状氧化物半导体层(7)的薄膜晶体管,以及电容器元件(105),其具有 由与栅极线(3s)相同的导电膜形成的第一电极(3b),由与源极线(13as)相同的导电膜形成的第二电极(13b)以及位于第一电极 第二电极。 栅极绝缘膜(5)具有层叠结构,该层叠结构具有包含氧化物的第一绝缘层(5A)和位于比第一绝缘膜更靠近栅电极的一侧的第二绝缘层(5B),并且具有较高的电介质 与第一绝缘膜恒定,层状结构与氧化物半导体层(7)接触。 电介质层包括第二绝缘膜(5B),但不包括第一绝缘膜(5A)。 因此,可以抑制氧缺陷导致的氧化物半导体层的劣化,而不会降低电容器元件的电容值)。