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1. 发明申请

US20090096067A1 METHOD OF FABRICATING A METAL OXYNITRIDE THIN FILM THAT INCLUDES A FIRST ANNEALING OF A METAL OXIDE FILM IN A NITROGEN-CONTAINING ATMOSPHERE TO FORM A METAL OXYNITRIDE FILM AND A SECOND ANNEALING OF THE METAL OXYNITRIDE FILM IN AN OXIDIZING ATMOSPHERE 有权
标题翻译：制造金属氧化物薄膜的方法，其包括在含氮的大气中的金属氧化物膜的第一次退火以形成金属氧化物膜和在氧化大气中的金属氧化物膜的第二次退火
公开(公告)号：US20090096067A1
公开(公告)日：2009-04-16
申请号：US12333577
申请日：2008-12-12
申请人： Kunihiko IWAMOTO , Koji TOMINAGA , Toshihide NABATAME , Tomoaki NISHIMURA
发明人： Kunihiko IWAMOTO , Koji TOMINAGA , Toshihide NABATAME , Tomoaki NISHIMURA
IPC分类号： H01L29/06 , C01B21/20
CPC分类号： H01L29/66575 , H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film. Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.
摘要翻译：在清洁基板的表面之后，形成界面层或反扩散膜。金属氧化物薄膜是建立在防扩散薄膜上的。退火在NH 3气氛中进行，以便在金属氧化物膜中扩散氮。金属氧化物膜的构建和氮的扩散重复几次，随后在O 2气氛中进行退火。通过在高于650℃的温度下在O 2气氛中退火该膜，可以控制金属氧化物膜中的漏电流。

2. 发明申请

US20090146216A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090146216A1
公开(公告)日：2009-06-11
申请号：US12329580
申请日：2008-12-06
申请人： Toshihide NABATAME , Kunihiko IWAMOTO , Yuuichi KAMIMUTA
发明人： Toshihide NABATAME , Kunihiko IWAMOTO , Yuuichi KAMIMUTA
IPC分类号： H01L27/092 , H01L21/28
CPC分类号： H01L21/823857
摘要： After forming a pure silicon oxide film on respective surfaces of an n-type well and a p-type well, an oxygen deficiency adjustment layer made of an oxide of 2A group elements, an oxide of 3A group elements, an oxide of 3B group elements, an oxide of 4A group elements, an oxide of 5A group elements or the like, a high dielectric constant film, and a conductive film having a reduction catalyst effect to hydrogen are sequentially deposited on the silicon oxide film, and the substrate is heat treated in the atmosphere containing H2, thereby forming a dipole between the oxygen deficiency adjustment layer and the silicon oxide film. Then, the conductive film, the high dielectric constant film, the oxygen deficiency adjustment layer, the silicon oxide film and the like are patterned, thereby forming a gate electrode and a gate insulating film.
摘要翻译：在n型阱和p型阱的各个表面上形成纯氧化硅膜之后，由2A族元素的氧化物，3A族元素的氧化物，3B族元素的氧化物构成的氧缺乏调整层，4A族元素的氧化物，5A族元素的氧化物等，高介电常数膜和具有还原催化剂对氢的催化剂作用的导电膜依次沉积在氧化硅膜上，将基材热处理在含有H 2的气氛中，从而在缺氧调节层和氧化硅膜之间形成偶极子。然后，对导电膜，高介电常数膜，氧缺陷调节层，氧化硅膜等进行构图，从而形成栅电极和栅极绝缘膜。

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