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1. 发明授权

US09261627B2 Zinc oxide anti-reflection layer having a syringe-like structure and method for fabricating the same 有权
标题翻译：具有注射器状结构的氧化锌防反射层及其制造方法
公开(公告)号：US09261627B2
公开(公告)日：2016-02-16
申请号：US13469037
申请日：2012-05-10
申请人： Kun-Ping Huang , Jr-Hau He , Li-Ko Yeh , Kun-Yu Lai
发明人： Kun-Ping Huang , Jr-Hau He , Li-Ko Yeh , Kun-Yu Lai
IPC分类号： G02B1/11 , B05D5/06 , B32B3/30 , C23C14/30 , G02B1/118 , C23C18/12
CPC分类号： G02B1/118 , C23C18/1216 , C23C18/1225 , C23C18/1245 , C23C18/125 , C23C18/1291 , Y10T428/24355
摘要： The disclosure provides a zinc oxide anti-reflection layer having a syringe-like structure and method for fabricating the same. The zinc oxide anti-reflection layer includes: a zinc oxide lower portion, wherein the zinc oxide lower portion has a nanorod array structure; and a zinc oxide upper portion connected to the zinc oxide lower portion, wherein the zinc oxide anti-reflection layer has a syringe-like structure.
摘要翻译：本发明提供一种具有注射器状结构的氧化锌抗反射层及其制造方法。氧化锌防反射层包括：氧化锌下部，其中氧化锌下部具有纳米棒阵列结构; 和与氧化锌下部连接的氧化锌上部，其中，氧化锌防反射层具有注射器状结构。

2. 发明申请

US20130129974A1 ZINC OXIDE ANTI-REFLECTION LAYER HAVING A SYRINGE-LIKE STRUCTURE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：具有类似结构的氧化锌抗反射层及其制造方法
公开(公告)号：US20130129974A1
公开(公告)日：2013-05-23
申请号：US13469037
申请日：2012-05-10
申请人： Kun-Ping Huang , Jr-Hau He , Li Ko Yeh , Kun-Yu Lai
发明人： Kun-Ping Huang , Jr-Hau He , Li Ko Yeh , Kun-Yu Lai
IPC分类号： G02B1/11 , B05D5/06 , C23C14/30 , B32B3/30
CPC分类号： G02B1/118 , C23C18/1216 , C23C18/1225 , C23C18/1245 , C23C18/125 , C23C18/1291 , Y10T428/24355
摘要： The disclosure provides a zinc oxide anti-reflection layer having a syringe-like structure and method for fabricating the same. The zinc oxide anti-reflection layer includes: a zinc oxide lower portion, wherein the zinc oxide lower portion has a nanorod array structure; and a zinc oxide upper portion connected to the zinc oxide lower portion, wherein the zinc oxide anti-reflection layer has a syringe-like structure.
摘要翻译：本发明提供一种具有注射器状结构的氧化锌抗反射层及其制造方法。氧化锌防反射层包括：氧化锌下部，其中氧化锌下部具有纳米棒阵列结构; 和与氧化锌下部连接的氧化锌上部，其中，氧化锌防反射层具有注射器状结构。

3. 发明申请

US20070015343A1 Method for dicing a semiconductor wafer 审中-公开
标题翻译：切割半导体晶片的方法
公开(公告)号：US20070015343A1
公开(公告)日：2007-01-18
申请号：US11182794
申请日：2005-07-18
申请人： Kuan-Jen Chung , Fu-Yao Yang , Williams Tsau , Chih-Hao Lin , Kun-Yu Lai
发明人： Kuan-Jen Chung , Fu-Yao Yang , Williams Tsau , Chih-Hao Lin , Kun-Yu Lai
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L33/0095
摘要： A method for dicing a semiconductor wafer includes the steps of: forming grooves in an integrated circuit layer of the semiconductor wafer; forming a photoresist layer on the integrated circuit layer; forming V-shaped first notches, each of which is further indented from the integrated circuit layer; thinning the substrate; attaching a blue tape to the integrated circuit layer; forming V-shaped second notches, each of which is indented from the thinned substrate and each of which is registered with a respective one of the first notches such that the first and second notches cooperatively define imaginary breaking lines, respectively; and pressing the blue tape at positions that are aligned with the imaginary breaking lines, respectively.
摘要翻译：一种用于切割半导体晶片的方法包括以下步骤：在半导体晶片的集成电路层中形成沟槽; 在所述集成电路层上形成光致抗蚀剂层; 形成V形的第一凹口，每个凹槽进一步从集成电路层缩进; 减薄基材; 将蓝色带粘附到集成电路层; 形成V形的第二凹口，每个凹槽从所述薄化的基板上凹入，并且每个凹槽分别与相应的一个所述第一凹口配准，使得所述第一和第二凹口分别协作地限定假想断裂线; 并分别在与虚拟断裂线对准的位置处按压蓝带。

4. 发明授权

US07157293B2 Method for making a semiconductor light emitting device 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US07157293B2
公开(公告)日：2007-01-02
申请号：US11062490
申请日：2005-02-23
申请人： Cheng-Chuan Chen , Kun-Yu Lai
发明人： Cheng-Chuan Chen , Kun-Yu Lai
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , Y10S438/907
摘要： A method for making a semiconductor light emitting device comprises the steps of: (a) forming a plurality of buttresses on a first supporting substrate such that the buttresses are separated by a plurality of intercommunicated spaces thereamong; (b) forming a base layer on top end portions of the buttresses in such a manner that the top end portions of the buttresses are enclosed in the base layer; (c) forming a multi-layered light-emitting structure on the base layer; (d) attaching a second supporting substrate to the light-emitting structure; and (e) separating the first supporting substrate from the light-emitting structure by destroying the buttresses.
摘要翻译：一种制造半导体发光器件的方法，包括以下步骤：（a）在第一支撑衬底上形成多个支撑，使得所述支撑件之间由多个相互连通的空间分开; （b）在所述支撑件的顶端部分上形成基层，使得所述支柱的顶端部封闭在所述基层中; （c）在基层上形成多层发光结构; （d）将第二支撑衬底附接到所述发光结构; 以及（e）通过破坏所述支撑体将所述第一支撑衬底与所述发光结构分离。

5. 发明申请

US20060094139A1 Method for making a semiconductor light emitting device 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20060094139A1
公开(公告)日：2006-05-04
申请号：US11062490
申请日：2005-02-23
申请人： Cheng-Chuan Chen , Kun-Yu Lai
发明人： Cheng-Chuan Chen , Kun-Yu Lai
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , Y10S438/907
摘要： A method for making a semiconductor light emitting device comprises the steps of: (a) forming a plurality of buttresses on a first supporting substrate such that the buttresses are separated by a plurality of intercommunicated spaces thereamong; (b) forming a base layer on top end portions of the buttresses in such a manner that the top end portions of the buttresses are enclosed in the base layer; (c) forming a multi-layered light-emitting structure on the base layer; (d) attaching a second supporting substrate to the light-emitting structure; and (e) separating the first supporting substrate from the light-emitting structure by destroying the buttresses.
摘要翻译：一种制造半导体发光器件的方法包括以下步骤：（a）在第一支撑衬底上形成多个支撑件，使得所述支撑件之间由多个相互连通的空间分开; （b）在所述支撑件的顶端部分上形成基层，使得所述支柱的顶端部封闭在所述基层中; （c）在基层上形成多层发光结构; （d）将第二支撑衬底附接到所述发光结构; 以及（e）通过破坏所述支撑体将所述第一支撑衬底与所述发光结构分离。

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