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1. 发明授权

US5876508A Method of cleaning slurry remnants after the completion of a chemical-mechanical polish process 失效
标题翻译：在化学机械抛光工艺完成后清洗浆料残留物的方法
公开(公告)号：US5876508A
公开(公告)日：1999-03-02
申请号：US818898
申请日：1997-03-17
申请人： Kun-Lin Wu , Chien-Hsien Lai , Horng-Bor Lu , Jenn-Tarng Lin
发明人： Kun-Lin Wu , Chien-Hsien Lai , Horng-Bor Lu , Jenn-Tarng Lin
IPC分类号： B08B3/02 , B24B37/04 , B24B53/007 , C11D3/39 , C11D7/06 , C11D7/08 , H01L21/306 , C03C25/00 , C23G1/02
CPC分类号： H01L21/02052 , B08B3/02 , B24B37/04 , B24B53/017 , C11D3/3947 , C11D7/06 , C11D7/08 , H01L21/30625 , Y10S438/959
摘要： A method for effectively cleaning the slurry remnants left on a polishing pad after the completion of a chemical mechanical polish (CMP) process is provided. This method is able to substantially thoroughly clean away all of the slurry remnants left on the polishing pad. In the method of the invention, the first step is to prepare a cleaning agent which is a mixture of H.sub.2 O.sub.2, deionized water, an acid solution, and an alkaline solution mixed to a predetermined ratio. The cleaning agent is subsequently directed to a nozzle formed in the pad dresser. This allows the cleaning agent to be jetted forcibly onto the slurry remnants on the polishing pad so as to clean the slurry remnants away from the polishing pad. The cleaning agent can be provided with predetermined ratios for various kinds of slurries so that the cleaning agent can be adjusted to be either acid or alkaline in nature. This can allow an increase in the repellent force between the particles of the slurry remnants and the underlying polishing pad that is caused by the so-called zeta potential, thus allowing the slurry remnants to be more easily removed from the polishing pad.
摘要翻译：提供了在完成化学机械抛光（CMP）工艺之后有效地清洁留在抛光垫上的浆料残余物的方法。该方法能够基本上彻底地清除留在抛光垫上的所有浆料残余物。在本发明的方法中，第一步是制备一种清洗剂，它是以预定比例混合的H 2 O 2，去离子水，酸性溶液和碱性溶液的混合物。随后将清洁剂引导到形成在修整器中的喷嘴。这样可以将洗涤剂强制地喷射到抛光垫上的浆料残余物上，以清除离开抛光垫的浆料残余物。可以为各种浆料提供预定比例的清洗剂，使清洗剂本质上可以调节为酸性或碱性。这可以增加由所谓的ζ电位引起的浆料残留物的颗粒和下面的抛光垫之间的驱除力，从而使浆料残余物更容易从抛光垫上去除。

2. 发明授权

US6030892A Method of preventing overpolishing in a chemical-mechanical polishing operation 失效
标题翻译：在化学机械抛光操作中防止过度抛光的方法
公开(公告)号：US6030892A
公开(公告)日：2000-02-29
申请号：US866131
申请日：1997-05-30
申请人： Kun-Lin Wu , Hao-Kuang Chiu , Horng-Bor Lu , Jenn-Tarng Lin
发明人： Kun-Lin Wu , Hao-Kuang Chiu , Horng-Bor Lu , Jenn-Tarng Lin
IPC分类号： H01L21/3105 , H01L21/4763
CPC分类号： H01L21/31053
摘要： A method of preventing overpolishing in a chemical-mechanical polishing operation includes using a spin-on polymer material instead of spin-on glass as the local planarization material. The spin-on polymer layer is further used as a polishing stop layer so as to prevent damage to components due to overpolishing, because the polishing rate of the spin-on polymer layer in a chemical-mechanical polishing operation is, in general, lower than the polishing rate of the silicon dioxide layer formed using plasma enhanced chemical vapor deposition.
摘要翻译：在化学机械抛光操作中防止过度抛光的方法包括使用旋涂聚合物材料代替旋涂玻璃作为局部平坦化材料。旋涂聚合物层进一步用作抛光停止层，以防止由于过度抛光而损坏组分，因为化学机械抛光操作中的旋涂聚合物层的抛光速率通常低于使用等离子体增强化学气相沉积形成的二氧化硅层的抛光速率。

3. 发明授权

US5883004A Method of planarization using interlayer dielectric 失效
标题翻译：使用层间电介质的平面化方法
公开(公告)号：US5883004A
公开(公告)日：1999-03-16
申请号：US920172
申请日：1997-08-25
申请人： Hao-Kuang Shiu , Kun-Lin Wu , Horng-Bor Lu , Jenn-Tarng Lin
发明人： Hao-Kuang Shiu , Kun-Lin Wu , Horng-Bor Lu , Jenn-Tarng Lin
IPC分类号： H01L21/3105 , H01L21/768 , H01L21/00
CPC分类号： H01L21/31053 , H01L21/76819
摘要： A method for planarizing interlayer dielectric is disclosed. The present invention includes firstly forming a barrier layer over a semiconductor substrate. Next, a buffer layer is formed on the barrier layer by a spin-on-glass technique. A dielectric layer is formed on the buffer layer, wherein etch rate of the dielectric layer is larger than etch rate of the buffer layer, and the barrier layer serves as a block of autodoping coming from the dielectric layer. Finally, the dielectric layer is etched back using the buffer layer as buffer, thereby planarizing the dielectric layer.
摘要翻译：公开了一种平面化层间电介质的方法。本发明包括首先在半导体衬底上形成阻挡层。接下来，通过旋涂玻璃技术在阻挡层上形成缓冲层。在缓冲层上形成电介质层，其中介电层的蚀刻速率大于缓冲层的蚀刻速率，势垒层用作来自电介质层的自掺杂块。最后，使用缓冲层作为缓冲层来回蚀介电层，从而平坦化介电层。

4. 发明授权

US6071806A Method for preventing poisoned vias and trenches 有权
标题翻译：防止中毒通路和沟槽的方法
公开(公告)号：US6071806A
公开(公告)日：2000-06-06
申请号：US152921
申请日：1998-09-14
申请人： Kun-Lin Wu , Horng-Bor Lu
发明人： Kun-Lin Wu , Horng-Bor Lu
IPC分类号： H01L21/3105 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76825 , H01L21/31058 , H01L21/76813 , H01L21/76831
摘要： A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an electron-beam process, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.
摘要翻译：一种用于防止在双镶嵌工艺中发生中毒的沟槽和通孔的方法，该方法包括在开口之前的开口周围的暴露介电层的表面上进行诸如电子束工艺的致密化处理，该导电材料填充有导电材料。电介质层的致密表面能够有效地防止由脱气现象引起的中毒的沟槽和通孔的发生。

5. 发明授权

US6057248A Method of removing residual contaminants in an alignment mark after a CMP process 失效
标题翻译：在CMP工艺之后去除对准标记中的残留污染物的方法
公开(公告)号：US6057248A
公开(公告)日：2000-05-02
申请号：US897282
申请日：1997-07-21
申请人： Kun-Lin Wu , Horng-Bor Lu
发明人： Kun-Lin Wu , Horng-Bor Lu
IPC分类号： H01L21/306 , H01L21/4763
CPC分类号： H01L21/02065
摘要： A method of removing residual contaminants in grooves of an alignment mark of a semiconductor wafer after a chemical-mechanical polishing is disclosed. The method includes scrubbing the semiconductor wafer using conventional scrubbing technique. Next, the semiconductor wafer is etched back to remove a damaged layer, which is formed during the chemical-mechanical polishing, over the semiconductor wafer. Finally, the semiconductor wafer is cleaned, for example, by NH.sub.4 OH/H.sub.2 O.sub.2 /DI, agitated by a megasonic source, thereby substantially removing the residual contaminants from the alignment mark.
摘要翻译：公开了一种在化学机械抛光之后去除半导体晶片的对准标记的凹槽中残留污染物的方法。该方法包括使用常规洗涤技术擦洗半导体晶片。接下来，将半导体晶片回蚀刻以除去在化学机械抛光期间形成的受损层在半导体晶片上。最后，例如通过NH 4 OH / H 2 O 2 / DI清洗半导体晶片，用兆声波源进行搅拌，从而基本上从对准标记中除去残留的污染物。

6. 发明授权

US06013559A Method of forming trench isolation 有权
标题翻译：形成沟槽隔离的方法
公开(公告)号：US06013559A
公开(公告)日：2000-01-11
申请号：US172465
申请日：1998-10-14
申请人： Kun-Lin Wu , Horng-Bor Lu
发明人： Kun-Lin Wu , Horng-Bor Lu
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76224 , Y10S148/05
摘要： A method of fabricating a trench isolation structure in a semiconductor devices. First, a mask layer is formed on a substrate and patterned. Then, a trench is formed in the substrate using the mask layer as a mask. An insulating layer is formed under the mask layer to fill the trench. The insulating layer is polished to expose a portion of the mask layer and an insulating plug is left in the trench. A RTP is performed to avoid mobile ions diffuse into the substrate. There are several operating conditions for the RTP. For example the operating temperature is ranged from about 600.degree. C. to about 1300.degree. C. The duration for performing the RTP is ranged from about 5 seconds to about 5 minutes. The operating gas can be selected from one of a group of N.sub.2, O.sub.2, or N.sub.2 O. Besides, before the RTP a cleaning step is performed using SC-1 or hydrogen fluoride (HF) solution as cleaning solution.
摘要翻译：一种在半导体器件中制造沟槽隔离结构的方法。首先，在基板上形成掩模层并进行图案化。然后，使用掩模层作为掩模在衬底中形成沟槽。在掩模层之下形成绝缘层以填充沟槽。抛光绝缘层以露出掩模层的一部分，并且绝缘插头留在沟槽中。执行RTP以避免移动离子扩散到衬底中。 RTP有几种操作条件。例如，操作温度范围为约600℃至约1300℃。执行RTP的持续时间为约5秒至约5分钟。工作气体可以选自一组N2，O2或N2O中的一种。此外，在RTP之前，使用SC-1或氟化氢（HF）溶液作为清洁溶液进行清洁步骤。

7. 发明授权

US06333261B1 Method for preventing aluminum intrusions 失效
标题翻译：防止铝侵入的方法
公开(公告)号：US06333261B1
公开(公告)日：2001-12-25
申请号：US09584697
申请日：2000-06-01
申请人： Chi-Jung Lin , Jyh-J Huang , Horng-Bor Lu , Kun-Lin Wu
发明人： Chi-Jung Lin , Jyh-J Huang , Horng-Bor Lu , Kun-Lin Wu
IPC分类号： H01L2144
CPC分类号： H01L21/76843
摘要： A semiconductor wafer includes a substrate, an aluminum layer on the substrate, an anti-reflection coating on the aluminum layer, a dielectric layer on the anti-reflection coating, and a via hole that passes through the dielectric layer and the anti-reflection coating down to a predetermined depth within the aluminum layer. A titanium layer is formed on the bottom and on the walls of the via hole. A physical vapor deposition process is then performed to form a first titanium nitride layer on the titanium layer. A chemical vapor deposition process is then performed to form a second titanium nitride layer on the first titanium nitride layer.
摘要翻译：半导体晶片包括基板，基板上的铝层，铝层上的防反射涂层，防反射涂层上的介电层，以及穿过介电层和防反射涂层的通孔下降到铝层内的预定深度。在通孔的底部和壁上形成钛层。然后进行物理气相沉积工艺以在钛层上形成第一氮化钛层。然后进行化学气相沉积工艺以在第一氮化钛层上形成第二氮化钛层。

8. 发明授权

US06225204B1 Method for preventing poisoned vias and trenches 失效
标题翻译：防止中毒通路和沟槽的方法
公开(公告)号：US06225204B1
公开(公告)日：2001-05-01
申请号：US09168226
申请日：1998-10-07
申请人： Kun-Lin Wu , Horng-Bor Lu
发明人： Kun-Lin Wu , Horng-Bor Lu
IPC分类号： H01L2144
CPC分类号： H01L21/76825 , H01L21/76813 , H01L21/76814 , H01L21/76831
摘要： A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an implantation process, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.
摘要翻译：一种用于防止在双镶嵌工艺中发生中毒的沟槽和通孔的方法，该方法包括在开口充满导电材料之前在开口周围的暴露介电层的表面上执行诸如注入工艺的致密化过程。电介质层的致密表面能够有效地防止由脱气现象引起的中毒的沟槽和通孔的发生。

9. 发明授权

US06180467B2 Method of fabricating shallow trench isolation 有权
标题翻译：浅沟槽隔离的制作方法
公开(公告)号：US06180467B2
公开(公告)日：2001-01-30
申请号：US09211641
申请日：1998-12-15
申请人： Kun-Lin Wu , Horng-Bor Lu
发明人： Kun-Lin Wu , Horng-Bor Lu
IPC分类号： H01L21336
CPC分类号： H01L21/76224
摘要： A method for fabricating a shallow trench isolation in a semiconductor substrate. A mask layer is formed on the substrate. The mask layer is patterned and used as a mask in order to form a trench in the substrate. A portion of the substrate is removed to form the trench in the substrate. A liner layer is formed on the substrate exposed by the trench and optionally, an additonal liner layer is formed on the liner layer. A doped isolation layer is formed to fill the trench. A densification step is performed. The mask layer is removed. The doped isolation layer has a lower glass transition temperature so that the temperature of the densification step is reduced to about 700° C. to 1000° C.
摘要翻译：一种用于在半导体衬底中制造浅沟槽隔离的方法。在基板上形成掩模层。将掩模层图案化并用作掩模，以便在衬底中形成沟槽。去除衬底的一部分以在衬底中形成沟槽。在由沟槽暴露的衬底上形成衬里层，并且任选地，在衬垫层上形成附加衬里层。形成掺杂隔离层以填充沟槽。进行致密化步骤。去除掩模层。掺杂隔离层具有较低的玻璃化转变温度，使得致密化步骤的温度降低至约700℃至1000℃。

10. 发明授权

US6150259A Method for forming a metal plug 有权
标题翻译：用于形成金属塞的方法
公开(公告)号：US6150259A
公开(公告)日：2000-11-21
申请号：US191162
申请日：1998-11-13
申请人： Kun-Lin Wu , Horng-Bor Lu
发明人： Kun-Lin Wu , Horng-Bor Lu
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/76862 , H01L21/76843 , H01L21/76856
摘要： A method for forming a metal plug is provided. The method is used to form a metal plug without a hole on a glue/barrier layer within a trench when the glue/barrier layer has been formed for a while. A substrate with a trench therein and a glue/barrier layer formed conformal to the profile of the substrate is provided. A post-treatment is performed on the glue/barrier layer to prevent moisture absorption and to make the glue/barrier become dense. The post-treatment comprises a plasma treatment or a deep UV plus laser treatment. After performing the post-treatment step, a metal layer is formed on the glue/barrier layer at least to fill in the trench. The metal layer other than that filling the trench is removed to form a metal plug.
摘要翻译：提供一种用于形成金属插头的方法。该方法用于当胶/阻隔层已经形成一段时间时，在沟槽内的胶/阻挡层上形成没有孔的金属塞。提供其中具有沟槽的衬底和与衬底的轮廓保形的形成的胶/阻挡层。在胶/阻隔层上进行后处理以防止吸湿并使胶/屏障变得致密。后处理包括等离子体处理或深UV加激光处理。在执行后处理步骤之后，至少在胶/阻挡层上形成金属层以填充沟槽。去除填充沟槽以外的金属层以形成金属塞。

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