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1. 发明授权

US5986204A Photovoltaic cell 失效
标题翻译：光伏电池
公开(公告)号：US5986204A
公开(公告)日：1999-11-16
申请号：US820565
申请日：1997-03-19
申请人： Yukiko Iwasaki , Katsumi Nakagawa , Kozo Arao
发明人： Yukiko Iwasaki , Katsumi Nakagawa , Kozo Arao
IPC分类号： H01L31/00
CPC分类号： H01L31/056 , Y02E10/52
摘要： By using an improved back reflecting layer, a photovoltaic cell having excellent migration resistance and a high photoelectric conversion efficiency is provided at high productivity. The photovoltaic cell includes a metal layer comprising a silver-aluminum alloy having a content of silver equal to or less than 30 atomic percent, the rest being aluminum, or a metal layer comprising a copper-aluminum alloy having a content of copper between 30 and 50 atomic percent, the rest being aluminum. It is preferable to form these layers at a relatively low temperature by sputtering, particularly at a temperature equal to or less than 110.degree. C. for the silver-aluminum alloy and at a temperature equal to or less than 120.degree. C. for the copper-aluminum alloy.
摘要翻译：通过使用改进的背反射层，以高生产率提供具有优异的耐迁移性和高光电转换效率的光伏电池。光伏电池包括含有银含量等于或小于30原子％的银 - 铝合金的金属层，其余为铝，或包含铜含量在30〜 50原子％，其余为铝。优选通过溅射在较低温度下形成这些层，特别是对于银 - 铝合金，等于或低于110℃的温度，并且在等于或小于120℃的温度下，对于铜 -铝合金。

2. 发明授权

US06258702B1 Method for the formation of a cuprous oxide film and process for the production of a semiconductor device using said method 有权
标题翻译：用于形成氧化亚铜膜的方法和使用所述方法生产半导体器件的方法
公开(公告)号：US06258702B1
公开(公告)日：2001-07-10
申请号：US09190100
申请日：1998-11-12
申请人： Katsumi Nakagawa , Kozo Arao , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Kozo Arao , Yukiko Iwasaki
IPC分类号： H01L2128
CPC分类号： H01L21/02565 , H01L21/02425 , H01L21/02628 , H01L21/02639 , H01L21/16 , H01L29/872 , H01L31/022425 , Y02E10/50
摘要： A film-forming method for forming a cuprous oxide film includes the steps of immersing a substrate having at least an electrically conductive surface in a solution containing copper ion and nitrate ion which are coexistent therein, and causing deposition of the cuprous oxide film on the electrically conductive surface of the substrate by way of cathodic reaction. A process for producing a semiconductor device such as a solar cell or a rectifier also is provided using the film-forming method.
摘要翻译：用于形成氧化亚铜膜的成膜方法包括以下步骤：将至少具有导电表面的基材浸入含有共存于其中的铜离子和硝酸根离子的溶液中，并使氧化亚铜膜沉积在电通过阴极反应形成衬底的导电表面。使用成膜方法也可以提供太阳能电池或整流器等半导体装置的制造方法。

3. 发明授权

US5804466A Process for production of zinc oxide thin film, and process for production of semiconductor device substrate and process for production of photoelectric conversion device using the same film 失效
标题翻译：氧化锌薄膜的制造方法，半导体装置用基板的制造方法以及使用该膜的光电转换装置的制造方法
公开(公告)号：US5804466A
公开(公告)日：1998-09-08
申请号：US811288
申请日：1997-03-04
申请人： Kozo Arao , Katsumi Nakagawa , Takaharu Kondo , Yukiko Iwasaki
发明人： Kozo Arao , Katsumi Nakagawa , Takaharu Kondo , Yukiko Iwasaki
IPC分类号： C25D5/10 , C25D9/08 , H01L31/052 , H01L31/075 , H01L31/18 , H01L31/00 , B05D1/36 , H01L21/00
CPC分类号： H01L31/076 , C25D5/10 , C25D9/08 , H01L31/056 , H01L31/075 , H01L31/1828 , H01L31/1884 , Y02E10/52 , Y02E10/543 , Y02E10/548 , Y02P70/521
摘要： A process for stably producing a zinc oxide thin film by electrolysis with excellent adhesion to a substrate is described. In particular, a zinc oxide thin film suitably used as a light confining layer of a photoelectric conversion element is formed on a conductive substrate by applying a current between a conductive substrate immersed in an aqueous solution containing at least nitrate ions, zinc ions, and a carbohydrate, and an electrode immersed in the solution.
摘要翻译：描述了通过电解稳定地生产氧化锌薄膜的方法，该方法具有优异的与基底的粘合性。特别地，适合用作光电转换元件的光限制层的氧化锌薄膜通过在浸入含有至少硝酸根离子，锌离子和碳水化合物和浸在溶液中的电极。

4. 发明授权

US5800632A Photovoltaic device and method for manufacturing it 失效
标题翻译：光伏器件及其制造方法
公开(公告)号：US5800632A
公开(公告)日：1998-09-01
申请号：US710947
申请日：1996-09-24
申请人： Kozo Arao , Katsumi Nakagawa , Yukiko Iwasaki
发明人： Kozo Arao , Katsumi Nakagawa , Yukiko Iwasaki
IPC分类号： H01L31/0392 , H01L31/052 , H01L31/18 , H01L31/20
CPC分类号： H01L31/1884 , H01L31/03921 , H01L31/056 , H01L31/206 , Y02E10/52 , Y02P70/521 , Y10S136/291
摘要： A method for manufacturing a photovoltaic device comprising a metal layer, a first transparent conductive layer, a semiconductor layer, and a second transparent conductive layer sequentially stacked on a substrate comprising iron, comprises the steps of forming the metal layer by electro-deposition of the metal layer from a solution and forming the first transparent conductive layer by electro-deposition of the first transparent conductive layer from a solution.
摘要翻译：一种制造光伏器件的方法，包括依次层叠在包含铁的衬底上的金属层，第一透明导电层，半导体层和第二透明导电层，包括以下步骤：通过电沉积形成金属层金属层，并通过从溶液中电沉积第一透明导电层形成第一透明导电层。

5. 发明授权

US6110347A Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate 有权
标题翻译：通过电沉积法或无电沉积法形成氧化铟膜的方法，设置有用于半导体元件的氧化铟膜的衬底以及设置有衬底的半导体元件
公开(公告)号：US6110347A
公开(公告)日：2000-08-29
申请号：US172774
申请日：1998-10-15
申请人： Kozo Arao , Katsumi Nakagawa , Yukiko Iwasaki
发明人： Kozo Arao , Katsumi Nakagawa , Yukiko Iwasaki
IPC分类号： H01L31/0224 , H01L31/052 , H01L31/075 , H01L31/18 , C25D9/00 , B05D1/18 , C25D9/04 , C25D9/10
CPC分类号： H01L31/022466 , H01L31/056 , H01L31/075 , H01L31/1884 , Y02E10/52 , Y02E10/548
摘要： A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the couter electrode, thereby causing indium oxide film formation on the substrate, is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided. An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate, is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film-forming method are further provided.
摘要翻译：一种通过将基板和对电极浸入至少含有硝酸盐和铟离子的水溶液中并在基板和couter电极之间流动电流从而在导电基板上形成氧化铟膜的方法，从而使氧化铟膜提供了衬底上的形成。还提供了一种用于半导体元件的基板和使用该膜形成方法制造的光电元件。还公开了通过无电沉积方法形成氧化铟膜的水溶液，其至少含有硝酸盐和铟离子和酒石酸盐。还提供了一种通过使用该水溶液的无电沉积工艺在衬底上形成氧化铟膜的膜形成方法，以及使用该膜形成方法制造的半导体元件用基板和光电元件。

6. 发明授权

US4926229A Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material 失效
标题翻译：具有含有1〜4原子％的含有Zn，Se，H的非单晶材料的P或N型半导体层的pin结光电元件和包含非单晶Si（H）的掺杂剂和I型半导体层，F）材料
公开(公告)号：US4926229A
公开(公告)日：1990-05-15
申请号：US272926
申请日：1988-11-18
申请人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Kozo Arao , Yasushi Fujioka , Akira Sakai
发明人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Kozo Arao , Yasushi Fujioka , Akira Sakai
IPC分类号： H01L31/0296 , H01L31/0392 , H01L31/075 , H01L31/18 , H01L31/20
CPC分类号： H01L31/076 , H01L31/02963 , H01L31/0392 , H01L31/03925 , H01L31/075 , H01L31/1828 , H01L31/202 , H01L31/204 , Y02E10/543 , Y02E10/548 , Y02P70/521
摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZnSe:H:M film, where M is a dopant of p-type or n-type: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

7. 发明授权

US4888062A Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % 失效
标题翻译：具有I型半导体层的pin结光电元件包含至少含有1至4原子％的Zn，Se和H的非单晶材料，
公开(公告)号：US4888062A
公开(公告)日：1989-12-19
申请号：US236792
申请日：1988-08-26
申请人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
发明人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
IPC分类号： H01L31/0296 , H01L31/077 , H01L31/18
CPC分类号： H01L31/077 , H01L31/0296 , H01L31/02963 , H01L31/02966 , H01L31/1828 , Y02E10/543
摘要： An improved pin junction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe.sub.1-x Te.sub.x :H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7.The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short-wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not exhibit any undesirable light-induced fatigue even upon continuous use for a long period of time.

8. 发明授权

US5028488A Functional ZnSe.sub.1-x Te.sub.x :H deposited film 失效
标题翻译：功能ZnSe1-xTex：H沉积膜
公开(公告)号：US5028488A
公开(公告)日：1991-07-02
申请号：US226819
申请日：1988-08-01
申请人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka
发明人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka
IPC分类号： C30B33/00 , C30B29/22 , C30B29/30 , C30B33/02 , G02F1/03 , G02F1/05 , H01L21/205 , H01L21/365 , H01L31/0248 , H01L31/0296 , H01L31/0392 , H01L31/04 , H01L31/068 , H01L31/18
CPC分类号： H01L31/1832 , H01L21/0237 , H01L21/0242 , H01L21/02422 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L31/02966 , H01L31/0392 , H01L31/068 , Y02E10/547 , Y10T428/31678
摘要： A functional ZnSe.sub.1-x Te.sub.x :H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe.sub.1-x Te.sub.x :H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way.These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate.These films are suited for the preparation of a high functional device such as a photovoltaic element.
摘要翻译：功能性ZnSe1-xTex：H膜具有高的掺杂效率，并且在光照射下的特性没有显着变化。所述膜的特征在于Se / Te的定量比在3:7至1:9的范围内以原子数比计，氢原子的含量为1至4原子％，晶粒的比例每单位体积的畴数在65至85体积％范围内。还提供了以上述方式表征的改进的高导电性的p型和n型ZnSe1-xTex：H：M膜（M代表掺杂剂）。这些沉积膜即使在金属，玻璃或合成树脂制成的非单晶衬底上也可以高沉积速率。这些膜适用于制备诸如光电元件的高功能器件。

9. 发明授权

US5008726A PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % 失效
标题翻译：含有1〜4原子％的Zn，Se，Te，H的PIN结光电元件
公开(公告)号：US5008726A
公开(公告)日：1991-04-16
申请号：US273070
申请日：1988-11-18
申请人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka , Akira Sakai
发明人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka , Akira Sakai
IPC分类号： H01L31/0296 , H01L31/0392 , H01L31/075 , H01L31/18
CPC分类号： H01L31/076 , H01L31/02963 , H01L31/02966 , H01L31/0392 , H01L31/03925 , H01L31/075 , H01L31/1832 , Y02E10/548
摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZSnSe.sub.1-x Te.sub.x :H:M film, where M is a dopant of p-type or n-type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

10. 发明授权

US4959106A Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % 失效
标题翻译：具有半导体层的光电元件包括含有至少ZN，SE和H的非单晶材料，其量为1至4原子％
公开(公告)号：US4959106A
公开(公告)日：1990-09-25
申请号：US399396
申请日：1989-08-28
申请人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
发明人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
IPC分类号： H01L21/363 , H01L21/365 , H01L31/0296 , H01L31/068 , H01L31/18
CPC分类号： H01L31/073 , H01L21/0237 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L31/02963 , H01L31/02966 , H01L31/068 , H01L31/1828 , H01L31/1832 , Y02E10/543 , Y02E10/547
摘要： A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.
摘要翻译： 1.一种通过p型半导体层和n型半导体层的连接产生光电动势的光电元件，其特征在于，所述半导体层中的至少一个由锌原子，硒原子，可选的碲原子和至少氢原子，所述沉积膜含有含有1至4原子％氢原子的p型或n型掺杂剂，其含有比例为1:9至3的硒原子和碲原子：7（以原子数计），并且还含有65〜85体积％的每单位体积的晶粒。

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