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    • 9. 发明授权
    • Avalanche photodiode
    • 雪崩光电二极管
    • US08575650B2
    • 2013-11-05
    • US13133990
    • 2009-12-11
    • Tadao IshibashiSeigo AndoYoshifumi MuramotoFumito NakajimaHaruki Yokoyama
    • Tadao IshibashiSeigo AndoYoshifumi MuramotoFumito NakajimaHaruki Yokoyama
    • H01L31/107
    • H01L31/1075
    • An electron injected APD with an embedded n electrode structure in which edge breakdown can be suppressed without controlling the doping profile of an n-type region of the embedded n electrode structure with high precision. The APD comprising a buffer layer with a low ionization rate is inserted between an n electrode connecting layer and an avalanche multiplication layer. Specifically, the APD is an electron injected APD in which an n electrode layer, the n electrode connecting layer, the buffer layer, the avalanche multiplication layer, an electric field control layer, a band gap gradient layer, a low-concentration light absorbing layer, a p-type light absorbing layer, and a p electrode layer are sequentially stacked, and a light absorbing portion that includes at least the low-concentration light absorbing layer and the p-type light absorbing layer forms a mesa shape.
    • 具有嵌入式n电极结构的电子注入APD,其中可以抑制边缘击穿而不以高精度控制嵌入式n电极结构的n型区域的掺杂分布。 包括具有低电离速率的缓冲层的APD插入在n电极连接层和雪崩倍增层之间。 具体地,APD是电子注入APD,其中n电极层,n电极连接层,缓冲层,雪崩倍增层,电场控制层,带隙梯度层,低浓度光吸收层 p型光吸收层和ap电极层依次层叠,并且至少包含低浓度光吸收层和p型光吸收层的光吸收部形成台面形状。