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1. 发明申请

US20120248295A1 PHOTODETECTOR 有权
标题翻译：照相机
公开(公告)号：US20120248295A1
公开(公告)日：2012-10-04
申请号：US13514220
申请日：2011-03-22
申请人： Kota Ito , Mineki Soga , Cristiano Niclass , Radivoje S. Popovic , Marc Lany , Toshiki Kindo
发明人： Kota Ito , Mineki Soga , Cristiano Niclass , Radivoje S. Popovic , Marc Lany , Toshiki Kindo
IPC分类号： H01L31/107
CPC分类号： H01L31/02027 , H03F3/08
摘要： A photodetector disclosed herein comprises an avalanche transistor having a reference junction structure in which temperature characteristics of a current amplification factor are about the same as those of an avalanche photodiode and which is reverse-biased, and a current injection junction structure which injects a reference current to the reference junction structure and which is forward-biased. Voltages to be applied to the avalanche photodiode and the reference junction structure are controlled so that the amplification factor of the reference current amplified in the reference junction structure is retained at a predetermined value, whereby the temperature characteristics of the photodetector utilizing an avalanche effect can be stabilized.
摘要翻译：本文公开的光电检测器包括具有参考连接结构的雪崩晶体管，其中电流放大因子的温度特性与雪崩光电二极管的温度特性大致相同，并且被反向偏置;以及电流注入结结构，其注入参考电流到参考结结构，并且是正向偏置的。控制施加到雪崩光电二极管和参考结结构的电压，使得在参考结结构中放大的参考电流的放大系数保持在预定值，由此利用雪崩效应的光电检测器的温度特性可以是稳定

2. 发明授权

US09006853B2 Photodetector 有权
标题翻译：光电检测器
公开(公告)号：US09006853B2
公开(公告)日：2015-04-14
申请号：US13514220
申请日：2011-03-22
申请人： Kota Ito , Mineki Soga , Cristiano Niclass , Radivoje S. Popovic , Marc Lany , Toshiki Kindo
发明人： Kota Ito , Mineki Soga , Cristiano Niclass , Radivoje S. Popovic , Marc Lany , Toshiki Kindo
IPC分类号： H01L31/107 , H01L21/20 , H01L31/02 , H03F3/08
CPC分类号： H01L31/02027 , H03F3/08
摘要： A photodetector disclosed herein comprises an avalanche transistor having a reference junction structure in which temperature characteristics of a current amplification factor are about the same as those of an avalanche photodiode and which is reverse-biased, and a current injection junction structure which injects a reference current to the reference junction structure and which is forward-biased. Voltages to be applied to the avalanche photodiode and the reference junction structure are controlled so that the amplification factor of the reference current amplified in the reference junction structure is retained at a predetermined value, whereby the temperature characteristics of the photodetector utilizing an avalanche effect can be stabilized.
摘要翻译：本文公开的光电检测器包括具有参考连接结构的雪崩晶体管，其中电流放大因子的温度特性与雪崩光电二极管的温度特性大致相同，并且被反向偏置;以及电流注入结结构，其注入参考电流到参考结结构，并且是正向偏置的。控制施加到雪崩光电二极管和参考结结构的电压，使得在参考结结构中放大的参考电流的放大系数保持在预定值，由此利用雪崩效应的光电检测器的温度特性可以是稳定

3. 发明授权

US09379510B2 Method for manufacturing circuit body and wire harness 有权
标题翻译：制造电路体和线束的方法
公开(公告)号：US09379510B2
公开(公告)日：2016-06-28
申请号：US13604953
申请日：2012-09-06
申请人： Kota Ito , Yoshiaki Suzuki
发明人： Kota Ito , Yoshiaki Suzuki
IPC分类号： H01B13/06 , H02G15/04 , H01R43/24
CPC分类号： H01R43/24
摘要： The wire harness as the circuit body is obtained as described below. In step S1, a long core wire constructed of a conductive metal is cut in a predetermined length. In step S2, a terminal part is molded in an end portion of the core wire and the core wire is bent in a predetermined shape. In step S3, a covering part is integrally molded in the center of the core wire. In step S4, a rubber stopper is integrally molded in an end portion of the covering part. In step S5, a conductor thin film sheet and a shield shell are assembled. In step S6, a connector housing is integrally molded. In step S7, packing is integrally molded. In step S8, a protective part is integrally molded.
摘要翻译：如下所述获得作为电路体的线束。在步骤S1中，以规定长度切断由导电金属构成的长芯线。在步骤S2中，将端子部分模制在芯线的端部，并将芯线弯曲成预定的形状。在步骤S3中，将覆盖部一体地模制在芯线的中心。在步骤S4中，橡胶塞一体地模制在覆盖部分的端部中。在步骤S5中，组装导体薄膜片和屏蔽壳。在步骤S6中，一体地模制连接器壳体。在步骤S7中，包装被整体模制。在步骤S8中，保护部件被一体地模制。

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