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1. 发明授权

US08946066B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08946066B2
公开(公告)日：2015-02-03
申请号：US13461808
申请日：2012-05-02
申请人： Kosei Noda , Shunpei Yamazaki , Tatsuya Honda , Yusuke Sekine , Hiroyuki Tomatsu
发明人： Kosei Noda , Shunpei Yamazaki , Tatsuya Honda , Yusuke Sekine , Hiroyuki Tomatsu
IPC分类号： H01L21/20 , H01L27/115 , H01L21/84 , H01L27/108 , H01L27/12 , H01L29/66 , H01L29/786 , H01L21/02
CPC分类号： H01L29/7869 , H01L21/0242 , H01L21/02554 , H01L21/02565 , H01L21/02595 , H01L21/02656 , H01L21/84 , H01L27/10873 , H01L27/1156 , H01L27/1203 , H01L27/1222 , H01L27/1225 , H01L27/1255 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/78609
摘要： A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.
摘要翻译：提供了包括氧化物半导体并且具有高场效应迁移率并且其中阈值电压的变化小的高度可靠的晶体管。通过使用晶体管，提供了难以实现的高性能半导体器件。晶体管包括含有选自铟，锡，锌和铝中的两种或更多种，优选三种或更多种元素的氧化物半导体膜。在加热基板的状态下形成氧化物半导体膜。此外，在晶体管的制造过程中，通过相邻的绝缘膜和/或通过离子注入向氧化物半导体膜提供氧，从而尽可能地减少产生载流子的氧气缺乏。此外，在晶体管的制造过程中，氧化物半导体膜被高度纯化，使得氢的浓度极低。

2. 发明授权

US08436518B2 Method for manufacturing light emitting device 有权
标题翻译：发光装置的制造方法
公开(公告)号：US08436518B2
公开(公告)日：2013-05-07
申请号：US12890893
申请日：2010-09-27
申请人： Shunpei Yamazaki , Masahiko Hayakawa , Koichiro Kamata , Hiroyuki Tomatsu , Hisao Ikeda , Junichiro Sakata
发明人： Shunpei Yamazaki , Masahiko Hayakawa , Koichiro Kamata , Hiroyuki Tomatsu , Hisao Ikeda , Junichiro Sakata
IPC分类号： H01I5/48
CPC分类号： G09G3/3258 , G09G3/007 , G09G3/2022 , G09G2300/0819 , G09G2300/0842 , G09G2310/0251 , G09G2310/0256 , G09G2310/027 , G09G2320/029 , G09G2320/043 , G09G2330/08 , H01L51/5265 , H01L2251/562 , Y02B10/14
摘要： An object of the present invention is to provide a new light emitting element with little initial deterioration, and a display device in which initial deterioration is reduced and variation in deterioration over time is reduced by a new method for driving a display device having the light emitting element. One feature of the invention is that a display device comprising a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a mixed layer of metal oxide and an organic compound provided between the first electrode and the second electrode is subjected to aging drive.
摘要翻译：本发明的目的是提供一种初始劣化很少的新的发光元件，以及通过新的驱动具有发光的显示装置的新方法，降低初始劣化并随时间劣化的变化的显示装置元件。本发明的一个特征在于，包括发光元件的显示装置包括第一电极，与第一电极相对的第二电极以及设置在第一电极和第二电极之间的金属氧化物和有机化合物的混合层，经历老化驱动。

3. 发明申请

US20060102910A1 Method for manufacturing light emitting device 审中-公开
公开(公告)号：US20060102910A1
公开(公告)日：2006-05-18
申请号：US11259689
申请日：2005-10-26
申请人： Shunpei Yamazaki , Masahiko Hayakawa , Koichiro Kamata , Hiroyuki Tomatsu , Hisao Ikeda , Junichiro Sakata
发明人： Shunpei Yamazaki , Masahiko Hayakawa , Koichiro Kamata , Hiroyuki Tomatsu , Hisao Ikeda , Junichiro Sakata
IPC分类号： H01L31/12
CPC分类号： G09G3/3258 , G09G3/007 , G09G3/2022 , G09G2300/0819 , G09G2300/0842 , G09G2310/0251 , G09G2310/0256 , G09G2310/027 , G09G2320/029 , G09G2320/043 , G09G2330/08 , H01L51/5265 , H01L2251/562 , Y02B10/14
摘要： An object of the present invention is to provide a new light emitting element with little initial deterioration, and a display device in which initial deterioration is reduced and variation in deterioration over time is reduced by a new method for driving a display device having the light emitting element. One feature of the invention is that a display device comprising a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a mixed layer of metal oxide and an organic compound provided between the first electrode and the second electrode is subjected to aging drive.

4. 发明申请

US20110014730A1 Method for Manufacturing Light Emitting Device 有权
标题翻译：制造发光装置的方法
公开(公告)号：US20110014730A1
公开(公告)日：2011-01-20
申请号：US12890893
申请日：2010-09-27
申请人： Shunpei Yamazaki , Masahiko Hayakawa , Koichiro Kamata , Hiroyuki Tomatsu , Hisao Ikeda , Junichiro Sakata
发明人： Shunpei Yamazaki , Masahiko Hayakawa , Koichiro Kamata , Hiroyuki Tomatsu , Hisao Ikeda , Junichiro Sakata
IPC分类号： H01L33/00
CPC分类号： G09G3/3258 , G09G3/007 , G09G3/2022 , G09G2300/0819 , G09G2300/0842 , G09G2310/0251 , G09G2310/0256 , G09G2310/027 , G09G2320/029 , G09G2320/043 , G09G2330/08 , H01L51/5265 , H01L2251/562 , Y02B10/14
摘要： An object of the present invention is to provide a new light emitting element with little initial deterioration, and a display device in which initial deterioration is reduced and variation in deterioration over time is reduced by a new method for driving a display device having the light emitting element. One feature of the invention is that a display device comprising a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a mixed layer of metal oxide and an organic compound provided between the first electrode and the second electrode is subjected to aging drive.
摘要翻译：本发明的目的是提供一种初始劣化很少的新的发光元件，以及通过新的驱动具有发光的显示装置的新方法，降低初始劣化并随时间劣化的变化的显示装置元件。本发明的一个特征在于，包括发光元件的显示装置包括第一电极，与第一电极相对的第二电极以及设置在第一电极和第二电极之间的金属氧化物和有机化合物的混合层，经历老化驱动。

5. 发明授权

US09117701B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09117701B2
公开(公告)日：2015-08-25
申请号：US13459537
申请日：2012-04-30
申请人： Hiroyuki Tomatsu , Hidetomo Kobayashi , Yutaka Shionoiri
发明人： Hiroyuki Tomatsu , Hidetomo Kobayashi , Yutaka Shionoiri
IPC分类号： G11C11/00 , G11C7/00 , H01L27/115 , G11C7/02 , G11C11/408 , G11C11/4091 , G11C11/4094
CPC分类号： H01L27/1156 , G11C7/02 , G11C11/4085 , G11C11/4091 , G11C11/4094
摘要： Noise generated on a word line is reduced without increasing a load on the word line. A semiconductor device is provided in which a plurality of storage elements each including at least one switching element are provided in matrix; each of the plurality of storage elements is electrically connected to a word line and a bit line; the word line is connected to a gate (or a source and a drain) of a transistor in which minority carriers do not exist substantially; and capacitance of the transistor in which minority carriers do not exist substantially can be controlled by controlling a potential of a source and a drain (or a gate) the transistor in which minority carriers do not exist substantially. The transistor in which minority carriers do not exist substantially may include a wide band gap semiconductor.
摘要翻译：在字线上产生的噪声减小，而不增加字线上的负载。提供一种半导体器件，其中包括至少一个开关元件的多个存储元件设置为矩阵; 多个存储元件中的每一个电连接到字线和位线; 字线连接到其中少数载体基本不存在的晶体管的栅极（或源极和漏极）; 并且通过控制其中不存在少数载流子的晶体管的源极和漏极（或栅极）的电位，可以控制其中不存在少数载流子的晶体管的电容。少数载流子不存在的晶体管可以包括宽带隙半导体。

6. 发明申请

US20120268849A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120268849A1
公开(公告)日：2012-10-25
申请号：US13448496
申请日：2012-04-17
申请人： Hiroyuki Tomatsu
发明人： Hiroyuki Tomatsu
IPC分类号： H02H9/04 , H01L25/00
CPC分类号： H01L27/0266 , H01L27/0688
摘要： To provide a protection circuit having a small area, redundancy, and small leak current. In the protection circuit, a plurality of nonlinear elements is provided so as to overlap with each other and so as to be electrically connected in series. At least one nonlinear element in the protection circuit is a diode-connected transistor including an oxide semiconductor in its channel formation region. The other nonlinear element is a diode-connected transistor including silicon in its channel formation region or a diode including silicon in its junction region.
摘要翻译：提供具有小面积，冗余性和小泄漏电流的保护电路。在保护电路中，多个非线性元件被设置为彼此重叠并且串联电连接。保护电路中的至少一个非线性元件是在其沟道形成区域中包括氧化物半导体的二极管连接的晶体管。另一非线性元件是在其沟道形成区域中包括硅的二极管连接的晶体管或在其结区域中包括硅的二极管。

7. 发明申请

US20120195115A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120195115A1
公开(公告)日：2012-08-02
申请号：US13356828
申请日：2012-01-24
申请人： Masashi Fujita , Yutaka Shionoiri , Hiroyuki Tomatsu , Hidetomo Kobayashi
发明人： Masashi Fujita , Yutaka Shionoiri , Hiroyuki Tomatsu , Hidetomo Kobayashi
IPC分类号： G11C11/34 , H01L27/108
CPC分类号： H01L27/1225 , H01L21/84 , H01L27/088 , H01L27/108 , H01L27/1156 , H01L27/1203 , H01L27/1222 , H01L27/1251
摘要： A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal.
摘要翻译：提供在绝缘区域上方设置有在第一半导体区域和第二半导体区域上设置绝缘区域的衬底上的第一场效应晶体管; 设置在所述基板上的绝缘层; 第二场效应晶体管，其设置在所述绝缘层的一个平面上，并且包括氧化物半导体层; 并提供控制终端。控制端子以与第二场效应晶体管的源极和漏极相同的步骤形成，并且用于控制第一场效应晶体管的阈值电压的电压被提供给控制端子。

8. 发明授权

US08941958B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08941958B2
公开(公告)日：2015-01-27
申请号：US13448496
申请日：2012-04-17
申请人： Hiroyuki Tomatsu
发明人： Hiroyuki Tomatsu
IPC分类号： H02H3/22 , H01L27/02 , H01L27/06
CPC分类号： H01L27/0266 , H01L27/0688
摘要： To provide a protection circuit having a small area, redundancy, and small leak current. In the protection circuit, a plurality of nonlinear elements is provided so as to overlap with each other and so as to be electrically connected in series. At least one nonlinear element in the protection circuit is a diode-connected transistor including an oxide semiconductor in its channel formation region. The other nonlinear element is a diode-connected transistor including silicon in its channel formation region or a diode including silicon in its junction region.
摘要翻译：提供具有小面积，冗余性和小泄漏电流的保护电路。在保护电路中，多个非线性元件被设置为彼此重叠并且串联电连接。保护电路中的至少一个非线性元件是在其沟道形成区域中包括氧化物半导体的二极管连接的晶体管。另一非线性元件是在其沟道形成区域中包括硅的二极管连接的晶体管或在其结区域中包括硅的二极管。

9. 发明授权

US08937304B2 Semiconductor device and electronic device 有权
标题翻译：半导体器件和电子器件
公开(公告)号：US08937304B2
公开(公告)日：2015-01-20
申请号：US13356828
申请日：2012-01-24
申请人： Masashi Fujita , Yutaka Shionoiri , Hiroyuki Tomatsu , Hidetomo Kobayashi
发明人： Masashi Fujita , Yutaka Shionoiri , Hiroyuki Tomatsu , Hidetomo Kobayashi
IPC分类号： H01L27/108 , G11C11/34 , H01L21/84 , H01L27/115 , H01L27/12
CPC分类号： H01L27/1225 , H01L21/84 , H01L27/088 , H01L27/108 , H01L27/1156 , H01L27/1203 , H01L27/1222 , H01L27/1251
摘要： A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal.
摘要翻译：提供在绝缘区域上方设置有在第一半导体区域和第二半导体区域上设置绝缘区域的衬底上的第一场效应晶体管; 设置在所述基板上的绝缘层; 第二场效应晶体管，其设置在所述绝缘层的一个平面上，并且包括氧化物半导体层; 并提供控制终端。控制端子以与第二场效应晶体管的源极和漏极相同的步骤形成，并且用于控制第一场效应晶体管的阈值电压的电压被提供给控制端子。

10. 发明授权

US08466014B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08466014B2
公开(公告)日：2013-06-18
申请号：US13558368
申请日：2012-07-26
申请人： Masashi Tsubuku , Shuhei Yoshitomi , Takahiro Tuji , Miyuki Hosoba , Junichiro Sakata , Hiroyuki Tomatsu , Masahiko Hayakawa
发明人： Masashi Tsubuku , Shuhei Yoshitomi , Takahiro Tuji , Miyuki Hosoba , Junichiro Sakata , Hiroyuki Tomatsu , Masahiko Hayakawa
IPC分类号： H01L21/00 , H01L21/84 , H01L21/335
CPC分类号： H01L27/1262 , H01L21/02554 , H01L21/02565 , H01L21/02595 , H01L21/02631 , H01L21/02667 , H01L27/1248 , H01L27/127 , H01L29/66765 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
摘要翻译：本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。形成保护绝缘层以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，以及在比第一热处理低的温度下进行第二热处理，其中，重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以制造。

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