会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Chip type tantalum capacitor
    • 片式钽电容
    • US4417298A
    • 1983-11-22
    • US150656
    • 1980-05-16
    • Koreaki NakataTsunehiko TodorokiMasahiro OitaNobumasa Oshima
    • Koreaki NakataTsunehiko TodorokiMasahiro OitaNobumasa Oshima
    • H01G9/00H01G9/012H05K3/34
    • H01G9/012H05K3/3442
    • A chip type tantalum capacitor has an insulating resin frame, a pair of substantially flat metal foil terminals bonded to both sides of the frame, at least one of the frame sides having a slit therethrough and open to the outside of the metal foil terminal on the one frame side, the metal foil terminal on the one frame side being a metal selected from the group consisting of copper and nickel. A tantalum capacitor element having a pair of terminals is enclosed in the frame, at least one of the element terminals being a lead wire made of tantalum, the lead wire extending through the slit and outside the metal foil terminal on the one side of the frame and being bent at the outside surface of the metal foil terminal with the bent portion of the lead wire outside the metal foil terminal extending along the surface of the metal foil terminal and being welded to the metal foil terminal surface for being fixed thereto, the other element terminal being electrically connected to the other metal foil terminal. An insulating resin is potted in the space inside the frame and around the capacitor element.
    • 芯片型钽电容器具有绝缘树脂框架,一对基本上平坦的金属箔端子,其结合到框架的两侧,至少一个框架侧面具有穿过其中的狭缝并且在金属箔端子的外侧开口 一个框架侧,一个框架侧的金属箔端子是选自铜和镍的金属。 具有一对端子的钽电容器元件被封装在框架中,至少一个元件端子是由钽制成的引线,引线延伸穿过狭缝并且在框架的一侧上的金属箔端子外部 并且金属箔端子的外表面弯曲,金属箔端子外侧的引线的弯曲部分沿金属箔端子的表面延伸并焊接到金属箔端子表面以固定在其上,另一个 元件端子与另一金属箔端子电连接。 绝缘树脂封装在框架内部和电容器元件周围。
    • 3. 发明授权
    • Method of forming tantalum capacitor anodes and making the capacitors
    • 形成钽电容器阳极并制造电容器的方法
    • US4450049A
    • 1984-05-22
    • US359837
    • 1982-03-19
    • Koreaki NakataJiro UenoYasuhiro Ogawa
    • Koreaki NakataJiro UenoYasuhiro Ogawa
    • C25D11/26H01G9/00C25D5/44C25D3/66C25D11/00
    • H01G9/0032C25D11/26
    • A solid tantalum electrolytic capacitor is formed by a method comprisinganodizing a tantalum sintered body for substantial dielectric film growth in a substantially aqueous electrolyte;anodically treating said anodized tantalum body in at least one fused salt selected from the group of nitrates of alkali metals, nitrates of alkaline earth metals and nitrites of alkali metals with an applied voltage which is as high as possible but within a range wherein capacitance-decrease of the anode formed in the aqueous electrolyte is not caused; andanodically treating said fused salt-treated tantalum body in a substantially aqueous electrolyte with an applied voltage which is as high as possible but within a range wherein re-anodization will not occur, the temperature of said fused salt being in the range of 250.degree. C. to 350.degree. C.
    • 一种固体钽电解电容器通过一种方法形成,该方法包括阳极氧化钽烧结体,用于在基本上含水电解质中实质上电介质膜生长; 在选自碱金属的硝酸盐,碱土金属的硝酸盐和碱金属亚硝酸盐的至少一种熔融盐中,以尽可能高的施加电压但在电容降低的范围内对所述阳极氧化的钽体进行阳极氧化处理 不会引起在电解液中形成的阳极; 并且在施加电压尽可能高但在不再发生阳极氧化的范围内的基本上含水电解质中阳极处理所述熔融盐处理的钽体,所述熔融盐的温度在250℃的范围内 C.至350℃