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1. 发明授权

US09359527B2 Gas barrier film 有权
标题翻译：阻气膜
公开(公告)号：US09359527B2
公开(公告)日：2016-06-07
申请号：US14759525
申请日：2014-01-09
申请人： Konica Minolta, Inc.
发明人： Kazutoshi Murota
IPC分类号： C09D183/16 , H05B33/04 , C09D183/00 , H01L51/52
CPC分类号： C09D183/16 , C08G77/62 , C09D183/00 , H01L51/524 , H05B33/04 , C08K5/17 , C08K5/06
摘要： The purpose of the present invention is to provide a gas barrier film which exhibits excellent storage stability, in particular, excellent storage stability even under harsh conditions (high temperature and high moisture conditions).The present invention pertains to a gas barrier film which comprises a substrate and a silicon-containing film that has a chemical composition represented by the following Chemical Formula (1) and that satisfies the relationships represented by Mathematical Formula 1 and Mathematical Formula 2: [Mathematical Formula 1] 0.001≦Y/(X+Y)≦0.25 Mathematical Formula 1 3.30≦3Y+2X≦4.80 Mathematical Formula 2 in Chemical Formula (1), M represents at least one selected from a group consisting of the elements belonging to Group 2 to Group 14 in the long period type Periodic Table (with the proviso that, silicon and carbon are excluded), x represents an atomic ratio of oxygen relative to silicon, y represents an atomic ratio of nitrogen relative to silicon, and z represents an atomic ratio of M relative to silicon, which is 0.01 to 0.3, and in Mathematical Formula 1 and Mathematical Formula 2, X=x/(1+(az/4)), and Y=y/(1+(az/4)) (with the proviso that, a is the valency of the element M).
摘要翻译：本发明的目的是提供即使在恶劣条件（高温和高湿度条件）下也具有优异的储存稳定性，特别是优异的储存稳定性的阻气膜。本发明涉及一种阻气膜，其包含具有由以下化学式（1）表示的化学组成并满足由数学式1和数学式2表示的关系的基材和含硅膜：[数学式1] 0.001＆nlE; Y /（X + Y）＆nlE; 0.25数学式1 3.30＆nlE; 3Y + 2X＆nlE; 4.80化学式（1）中的数学式2，M表示选自元素属于长周期型周期表中第2组至第14组（条件是不包括硅和碳），x表示氧相对于硅的原子比，y表示氮相对于硅的原子比， z表示相对于硅的M的原子比，其为0.01〜0.3，在数学式1和数学式2中，X = x /（1 +（az / 4）），Y = y /（1 + az / 4））（条件是a是th的化合价 e元素M）。

2. 发明授权

US09481010B2 Method for producing gas barrier film 有权
标题翻译：阻气膜的制造方法
公开(公告)号：US09481010B2
公开(公告)日：2016-11-01
申请号：US14398580
申请日：2013-04-30
申请人： Konica Minolta, Inc.
发明人： Kazutoshi Murota
IPC分类号： B05D3/00 , C08J7/04 , B32B37/24 , C08J7/12 , B05D3/06 , B05D3/04 , B05D5/00 , C09D183/16 , B32B38/00 , C08G77/62
CPC分类号： B05D3/002 , B05D3/046 , B05D3/067 , B05D5/00 , B32B37/24 , B32B2037/243 , B32B2038/0092 , B32B2310/0831 , B32B2457/20 , B32B2457/208 , C08G77/62 , C08J7/04 , C08J7/123 , C08J2383/04 , C09D183/16
摘要： Provided is a method for producing a gas barrier film having a base and a gas barrier layer being arranged on the base, containing a step (1) for preparing a base having a moisture content of 0.01 to 1% by mass, a step (2) for obtaining a coating film by coating a coating liquid containing polysilazane onto the base, and a step (3) for forming a gas barrier layer by irradiating the coating film with vacuum ultraviolet rays.
摘要翻译：本发明提供一种阻气膜的制造方法，该阻气膜具有设置在基材上的基材和阻气层，含有制备水分含量为0.01〜1质量％的碱的工序（1），工序（2 ），通过将含有聚硅氮烷的涂布液涂布在基材上得到涂膜，以及通过用真空紫外线照射涂膜形成阻气层的工序（3）。

3. 发明申请

US20150111046A1 METHOD FOR PRODUCING GAS BARRIER FILM 有权
标题翻译：气体阻隔膜生产方法
公开(公告)号：US20150111046A1
公开(公告)日：2015-04-23
申请号：US14398580
申请日：2013-04-30
申请人： Konica Minolta, Inc.
发明人： Kazutoshi Murota
IPC分类号： B05D3/00 , C09D183/16 , B05D3/04 , B05D5/00 , B05D3/06
CPC分类号： B05D3/002 , B05D3/046 , B05D3/067 , B05D5/00 , B32B37/24 , B32B2037/243 , B32B2038/0092 , B32B2310/0831 , B32B2457/20 , B32B2457/208 , C08G77/62 , C08J7/04 , C08J7/123 , C08J2383/04 , C09D183/16
摘要： [Subject] To provide a method for producing a gas barrier film having an excellent gas barrier property.[Solving means] A method for producing a gas barrier film having a base and a gas barrier layer being arranged on the base, comprising a step (1) for preparing a base having a moisture content of 0.01 to 1% by mass, a step (2) for obtaining a coating film by coating a coating liquid containing polysilazane onto the base, and a step (3) for forming a gas barrier layer by irradiating the coating film with vacuum ultraviolet rays.
摘要翻译：本发明提供一种阻气性优异的阻气膜的制造方法。 [解决方案]一种制备在基体上具有基体和阻气层的阻气膜的方法，包括步骤（1），其用于制备水分含量为0.01至1质量％的碱，步骤（2）通过将含有聚硅氮烷的涂布液涂布在基材上得到涂膜，以及通过用真空紫外线照射涂膜形成阻气层的工序（3）。

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