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    • 2. 发明授权
    • Manufacturing method of microstructure and microelectromechanical system
    • 微结构和微机电系统的制造方法
    • US07537953B2
    • 2009-05-26
    • US11557353
    • 2006-11-07
    • Fuminori TateishiKonami IzumiMayumi Yamaguchi
    • Fuminori TateishiKonami IzumiMayumi Yamaguchi
    • G01R31/26
    • B81C1/00476
    • To reduce the number of photomasks which are used to form sacrificial layers for producing spaces of a microstructure, thereby reducing the manufacturing cost. Sacrificial layers are formed by using resist masks which are patterned with the same photomask. Specifically, after forming a first sacrificial layer by etching using a resist mask, a second sacrificial layer is formed by etching using a resist mask which is pattered with same photomask as the resist mask of the first sacrificial layer. By deforming one of the resist masks before etching its corresponding sacrificial layer, for example by increasing or reducing the external dimension of the resist mask, sacrificial layers having different sizes from each other can be formed.
    • 为了减少用于形成用于形成微结构的空间的牺牲层的光掩模的数量,从而降低制造成本。 牺牲层通过使用用相同光掩模图案化的抗蚀剂掩模形成。 具体而言,在使用抗蚀剂掩模蚀刻形成第一牺牲层之后,通过使用与第一牺牲层的抗蚀剂掩模相同的光掩模图案化的抗蚀剂掩模进行蚀刻来形成第二牺牲层。 在蚀刻其相应的牺牲层之前,通过使抗蚀剂掩模之一变形,例如通过增加或减小抗蚀剂掩模的外部尺寸,可以形成具有彼此不同尺寸的牺牲层。