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1. 发明授权

US07235831B2 Light-receiving element and photoelectric conversion device 有权
标题翻译：光接收元件和光电转换装置
公开(公告)号：US07235831B2
公开(公告)日：2007-06-26
申请号：US10637672
申请日：2003-08-11
申请人： Hiraku Kozuka , Toru Koizumi , Koji Sawada
发明人： Hiraku Kozuka , Toru Koizumi , Koji Sawada
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L31/113
CPC分类号： H01L27/14603 , H01L31/0352 , H01L31/103
摘要： In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element which includes a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provided on the first semiconductor region, a third semiconductor region of the first conductivity type, provided between the second semiconductor region and an insulating film and an electrode region of the second conductivity type, provided in the second semiconductor region where the third semiconductor region is absent on and above the second semiconductor region, and connected to an anode or cathode electrode consisting of a conductor.
摘要翻译：为了降低光接收元件的电容，本发明提供一种光接收元件，其包括第一导电类型的第一半导体区域和第二导电类型的第二半导体区域，设置在第一半导体区域上设置在第二半导体区域和绝缘膜之间的第一导电类型的第三半导体区域和设置在第二半导体区域中的第二导电类型的电极区域，其中第二半导体区域在第二半导体区域之上和之上不存在并连接到由导体组成的阳极或阴极电极。

2. 发明授权

US06528832B1 Photoelectric conversion device and image sensor 有权
标题翻译：光电转换装置和图像传感器
公开(公告)号：US06528832B1
公开(公告)日：2003-03-04
申请号：US09684360
申请日：2000-10-06
申请人： Koji Sawada , Hiraku Kozuka
发明人： Koji Sawada , Hiraku Kozuka
IPC分类号： H01L3106
CPC分类号： H04N5/35518 , H01L27/14609 , H01L27/14656
摘要： An image sensor having a plurality of photodetectors and a source follower, storing photo-charges generated by the photodetectors in gate of a MOS transistor and outputting voltage signals converted from the photo-charges, integrally formed on a single semiconductor substrate. The source follower is configured with p-channel MOS transistors to restrain generation of stray carrier. Further, the p-channel MOS transistor of the source follower on the power source side is formed on an n-type well whose impurity concentration is higher than that of an n-type semiconductor substrate where the p-channel MOS transistor on the ground side is formed. In this configuration, the absolute value of the threshold voltage of the p-channel MOS transistor on the ground side becomes lower than that of the p-channel MOS transistor on the power source side, thus gain of the source follower is increased.
摘要翻译：一种具有多个光电检测器和源极跟随器的图像传感器，其存储由MOS晶体管的栅极中的光电检测器产生的光电荷，并且输出由单个半导体衬底整体形成的从光电荷转换的电压信号。源极跟随器配置有p沟道MOS晶体管以抑制杂散载流子的产生。此外，电源侧的源极跟随器的p沟道MOS晶体管形成在杂质浓度高于n型半导体衬底的n型阱上，其中在地侧的p沟道MOS晶体管形成了。在该结构中，接地侧的p沟道MOS晶体管的阈值电压的绝对值变得低于电源侧的p沟道MOS晶体管的阈值电压的绝对值，因此源极跟随器的增益增加。

3. 发明授权

US06303951B1 Image sensor of a multi-chip type having a plurality of photoelectric conversion chips 有权
标题翻译：具有多个光电转换芯片的多芯片型图像传感器
公开(公告)号：US06303951B1
公开(公告)日：2001-10-16
申请号：US09546707
申请日：2000-04-10
申请人： Koji Sawada , Hiraku Kozuka
发明人： Koji Sawada , Hiraku Kozuka
IPC分类号： H01L31062
CPC分类号： H04N5/3692 , H04N5/3454
摘要： Photoelectric conversion chips having the same structure are disposed in line and electrically connected together to constitute a multi-chip type image sensor. The gate of a load transistor of a source follower circuit of each of the photoelectric conversion chips is connected in common to one constant current source circuit. The constant current source circuit and photoelectric conversion chips are mounted on a substrate. With this structure, the common current source circuit is used for all the source follower circuits so that noises will not be generated on the photoelectric conversion chip unit basis. The multi-chip type image sensor can therefore improve the image quality, and horizontal or vertical stripes to be caused by noises otherwise generated in separate constant current source circuits can be removed.
摘要翻译：具有相同结构的光电转换芯片排列成一行并电连接在一起构成多芯片型图像传感器。每个光电转换芯片的源极跟随器电路的负载晶体管的栅极共同连接到一个恒定电流源电路。恒流源电路和光电转换芯片安装在基板上。利用这种结构，公共电流源电路用于所有源极跟随器电路，从而在光电转换芯片单元的基础上不会产生噪声。因此，多芯片型图像传感器可以提高图像质量，并且可以去除由分立的恒流源电路中产生的噪声引起的水平或垂直条纹。

4. 发明授权

US06184516B2 Photoelectric conversion device and image sensor 失效
标题翻译：光电转换装置和图像传感器
公开(公告)号：US06184516B2
公开(公告)日：2001-02-06
申请号：US09086331
申请日：1998-05-28
申请人： Koji Sawada , Hiraku Kozuka
发明人： Koji Sawada , Hiraku Kozuka
IPC分类号： H01J4014
CPC分类号： H04N5/359 , H01L27/14609 , H01L27/14634 , H01L27/14643 , H04N5/378
摘要： A photoelectric conversion device and an image sensor having a plurality of photodetectors and peripheral circuits, configured with MOS transistors, which are integrally formed on a semiconductor substrate. In the peripheral circuits, including a MOS operational amplifier, for outputting electric signals obtained from the photodetectors to outside, a source follower using an n-channel MOS transistor and a source follower using a p-channel MOS transistor are formed subsequent to the MOS operational amplifier. Output from the MOS operational amplifier enters the gate of the source follower of the n-channel MOS transistor, output from the source follower of the n-channel MOS transistor enters the gate of the source follower using a p-channel MOS transistor, and output from the source follower of the p-channel MOS transistor enters a negative input terminal of the MOS operational amplifier as well as is outputted to outside to drive an external load.
摘要翻译：一种光电转换装置和具有多个光电探测器和外围电路的图像传感器，它们被配置为一体形成在半导体衬底上的MOS晶体管。在包括MOS运算放大器的外围电路中，用于将从光电检测器获得的电信号输出到外部，在MOS操作之后形成使用n沟道MOS晶体管的源极跟随器和使用p沟道MOS晶体管的源极跟随器放大器来自MOS运算放大器的输出进入n沟道MOS晶体管的源极跟随器的栅极，从n沟道MOS晶体管的源极跟随器输出，使用p沟道MOS晶体管进入源极跟随器的栅极，并输出从p沟道MOS晶体管的源极跟随器进入MOS运算放大器的负输入端，并输出到外部以驱动外部负载。

5. 发明授权

US06649951B2 Light-receiving element and photoelectric conversion device 有权
标题翻译：光接收元件和光电转换装置
公开(公告)号：US06649951B2
公开(公告)日：2003-11-18
申请号：US10284296
申请日：2002-10-31
申请人： Hiraku Kozuka , Toru Koizumi , Koji Sawada
发明人： Hiraku Kozuka , Toru Koizumi , Koji Sawada
IPC分类号： H01L31103
CPC分类号： H01L27/14603 , H01L31/0352 , H01L31/103
摘要： In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element comprises a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provided on the first semiconductor region, a third semiconductor region of the first conductivity type, provided between the second semiconductor region and an insulating film and an electrode region of the second conductivity type, provided in the second semiconductor region where the third semiconductor region is absent on and above the second semiconductor region, and connected to an anode or cathode electrode consisting of a conductor.
摘要翻译：为了减小光接收元件的电容，本发明提供了一种光接收元件，其包括第一导电类型的第一半导体区域和设置在第一半导体区域上的第二导电类型的第二半导体区域，设置在第二半导体区域和绝缘膜之间的第一导电类型的第三半导体区域和设置在第二半导体区域中的第二导电类型的电极区域，其中第二半导体区域不在第二半导体区域上方并连接到由导体组成的阳极或阴极电极。

6. 发明授权

US06590242B1 Light-receiving element and photoelectric conversion device 有权
公开(公告)号：US06590242B1
公开(公告)日：2003-07-08
申请号：US09512031
申请日：2000-02-24
申请人： Hiraku Kozuka , Toru Koizumi , Koji Sawada
发明人： Hiraku Kozuka , Toru Koizumi , Koji Sawada
IPC分类号： H01L31068
CPC分类号： H01L27/14603 , H01L31/0352 , H01L31/103
摘要： In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element comprises a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type, provided on the first semiconductor region, a third semiconductor region of the first conductivity type, provided between the second semiconductor region and an insulating film and an electrode region of the second conductivity type, provided in the second semiconductor region where the third semiconductor region is absent on and above the second semiconductor region, and connected to an anode or cathode electrode consisting of a conductor.

7. 发明授权

US06169317A Photoelectric conversion device and image sensor 失效
标题翻译：光电转换装置和图像传感器
公开(公告)号：US06169317A
公开(公告)日：2001-01-02
申请号：US09247950
申请日：1999-02-11
申请人： Koji Sawada , Hiraku Kozuka , Shigeru Nishimura
发明人： Koji Sawada , Hiraku Kozuka , Shigeru Nishimura
IPC分类号： H01L310232
CPC分类号： H01L27/14625 , H01L27/14609 , H01L27/14623
摘要： To make the thickness of an interlevel insulating film uniform and suppress variations in output signal, in a photoelectric conversion element including a plurality of photoelectric conversion portions, and light-shielding units having openings formed above the photoelectric conversion portions, the light-shielding units have first light-shielding layers, and second light-shielding layers formed on the first light-shielding layers via an interlevel insulating film. The first light-shielding layers have gaps (GP) for allowing two adjacent openings (OP) to communicate with each other. The second light-shielding layers have light-shielding portions (12a) above the gaps of the first light-shielding layers.
摘要翻译：为了使层间绝缘膜的厚度均匀并且抑制输出信号的变化，在包括多个光电转换部的光电转换元件和在光电转换部的上方形成有开口的遮光部，遮光部具有第一遮光层和通过层间绝缘膜形成在第一遮光层上的第二遮光层。第一遮光层具有允许两个相邻开口（OP）彼此连通的间隙（GP）。第二遮光层在第一遮光层的间隙上方具有遮光部（12a）。

8. 发明授权

US6150682A Photoelectric conversion device and image sensor 失效
公开(公告)号：US6150682A
公开(公告)日：2000-11-21
申请号：US85083
申请日：1998-05-26
申请人： Koji Sawada , Hiraku Kozuka
发明人： Koji Sawada , Hiraku Kozuka
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H04N5/335 , H04N5/365 , H04N5/372 , H04N5/374 , H04N5/378 , H01L31/06
CPC分类号： H04N5/35518 , H01L27/14609 , H01L27/14656
摘要： An image sensor having a plurality of photodetectors and a source follower, storing photo-charges generated by the photodetectors in gate of a MOS transistor and outputting voltage signals converted from the photo-charges, integrally formed on a single semiconductor substrate. The source follower is configured with p-channel MOS transistors to restrain generation of stray carrier. Further, the p-channel MOS transistor of the source follower on the power source side is formed on an n-type well whose impurity concentration is higher than that of an n-type semiconductor substrate where the p-channel MOS transistor on the ground side is formed. In this configuration, the absolute value of the threshold voltage of the p-channel MOS transistor on the ground side becomes lower than that of the p-channel MOS transistor on the power source side, thus gain of the source follower is increased.

9. 发明申请

US20090007505A1 Window drain 有权
标题翻译：窗户排水
公开(公告)号：US20090007505A1
公开(公告)日：2009-01-08
申请号：US12216310
申请日：2008-07-02
申请人： Koji Sawada
发明人： Koji Sawada
IPC分类号： E06B7/14
CPC分类号： E06B1/702
摘要： A window drain for preventing stains on a building wall and damage caused by frozen rain water, which is installable and sealable easily without impairing the appearance of a building. The present invention relates to a window drain adapted to be positioned at the portion beneath each vertical post of a sash window frame comprising a vertical portion, a sloping portion, a front portion and a horizontal portion for latching itself to an upper portion of an external wall. Further, the present invention relates to the window drain, wherein the horizontal portion has a notch at an end thereof and a sealing pocket. Further, the present invention relates to a window drain, further comprising upstanding portions to regulate a stream of water so that the water is kept between the upstanding portions, at both ends of the window drain wherein one upstanding portion is located at the inner side of the vertical portion of a sash window frame, and the other upstanding portion is located at the outer side of the vertical portion of a sash window frame.
摘要翻译：用于防止建筑物墙壁上的污渍和易受冻雨造成的破坏的窗户，易于安装和密封，而不会损坏建筑物的外观。本发明涉及一种适于定位在窗框框架的每个垂直柱下方的部分处的窗口排水口，其包括垂直部分，倾斜部分，前部分和水平部分，用于将其自身锁定到外部的上部壁。此外，本发明涉及窗口排水，其中水平部分在其一端具有凹口和密封袋。此外，本发明涉及一种窗排水装置，其还包括直立部分以调节水流，使得水保持在直立部分之间，在窗口排水的两端处，其中一个直立部分位于窗框框架的垂直部分，另一直立部分位于窗框框架的垂直部分的外侧。

10. 发明申请

US20050035271A1 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US20050035271A1
公开(公告)日：2005-02-17
申请号：US10887816
申请日：2004-07-12
申请人： Tetsunobu Kochi , Koji Sawada
发明人： Tetsunobu Kochi , Koji Sawada
IPC分类号： H01L27/146 , G06T1/00 , H01L27/00 , H04N1/028 , H04N5/335 , H04N5/369 , H04N5/374
CPC分类号： H04N5/3692 , H04N5/361
摘要： A solid-state imaging device includes a plurality of pixels each including a photoelectric conversion element and a signal amplification element which receives a signal from the photoelectric conversion element to amplify and output the signal, a signal amplifier including a first input terminal which receives the signal from the signal amplification element and a second input terminal into which a reference voltage is input, and a reference electric power supply, which supplies the reference voltage to the second input terminal of the signal amplifier, the reference electric power supply including a circuit configuration equivalent to the signal amplification element.
摘要翻译：固态成像装置包括多个像素，每个像素包括光电转换元件和信号放大元件，信号放大元件接收来自光电转换元件的信号以放大和输出信号;信号放大器，包括接收信号的第一输入端从信号放大元件和输入基准电压的第二输入端子和将参考电压提供给信号放大器的第二输入端的参考电源，该参考电源包括电路配置等效电路到信号放大元件。

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