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    • 8. 发明授权
    • Photoresist composition
    • 光刻胶组成
    • US08846294B2
    • 2014-09-30
    • US13434251
    • 2012-03-29
    • Koji IchikawaYukako AnryuSatoshi Yamaguchi
    • Koji IchikawaYukako AnryuSatoshi Yamaguchi
    • G03F7/004G03F7/30G03F7/38G03F7/039G03F7/20
    • G03F7/0045G03F7/0392G03F7/0397G03F7/2041G03F7/38Y10S430/111
    • The present invention provides a photoresist composition comprising the following components (A), (B) and (X): (A) a resin being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid, (B) an acid generator, (X) at least one compound selected from the group consisting of a compound represented by the formula (I-a): wherein Z1 represent a C1-C20 divalent saturated aliphatic hydrocarbon group in which one or more —CH2— may be replaced by —O— or —CO—, and a compound represented by the formula (I-b): wherein R1 represents a C1-C20 monovalent saturated aliphatic hydrocarbon group in which one or more hydrogen atoms may be substituted with a hydroxyl group and one or more —CH2— may be replaced by —O— or —CO—, and n represents 0 or 1.
    • 本发明提供了包含以下组分(A),(B)和(X))的光致抗蚀剂组合物:(A)在碱性水溶液中不溶或难溶的树脂,但是通过 酸,(B)酸产生剂,(X)至少一种选自由式(Ia)表示的化合物的化合物:其中Z1表示C1-C20二价饱和脂族烃基,其中一个或多个 -CH 2 - 可以被-O-或-CO-代替,和由式(Ib)表示的化合物:其中R1表示其中一个或多个氢原子可被一个或多个氢原子取代的C1-C20一价饱和脂族烃基 羟基和一个或多个-CH 2 - 可以被-O-或-CO-代替,并且n表示0或1。