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1. 发明授权

US08457463B2 Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device 有权
标题翻译：光束均化器，激光照射装置以及半导体装置的制造方法
公开(公告)号：US08457463B2
公开(公告)日：2013-06-04
申请号：US13116381
申请日：2011-05-26
申请人： Koichiro Tanaka , Tomoaki Moriwaka
发明人： Koichiro Tanaka , Tomoaki Moriwaka
IPC分类号： G02B6/10
CPC分类号： G02B27/0966 , G02B6/4204 , G02B27/0994 , H01S3/005
摘要： The present invention provides a beam homogenizer being able to form a rectangular beam spot having homogeneous energy distribution in a direction of its major axis without using the optical lens requiring to be manufactured with high accuracy. In addition, the present invention provides a laser irradiation apparatus being able to irradiate the laser beam having homogeneous energy distribution in a direction of its major axis. Furthermore, the present invention provides a method for manufacturing a semiconductor device being able to enhance crystallinity in the surface of the substrate and to manufacture TFT with a high operating characteristic.The beam homogenizer, one of the present invention, is to shape the beam spot on the surface to be irradiated into a rectangular spot having an aspect ratio of 10 or more, preferably 100 or more, and comprises an optical waveguide for homogenizing the energy distribution of the rectangular beam spot in the direction of its major axis.
摘要翻译：本发明提供一种光束均化器，其能够在不需要以高精度制造的光学透镜的情况下形成在其长轴方向上具有均匀能量分布的矩形束斑。此外，本发明提供一种激光照射装置，其能够照射具有在其长轴方向上具有均匀能量分布的激光束。此外，本发明提供了一种能够提高基板表面的结晶度并制造具有高工作特性的TFT的半导体器件的制造方法。本发明之一的光束均化器是将待照射的表面上的束斑成形为纵横比为10以上，优选为100以上的矩形斑点，并且包括用于使能量分布均匀化的光波导的矩形束斑在其长轴方向上。

2. 发明申请

US20080318398A1 Method for manufacturing crystalline semiconductor film and semiconductor device 有权
标题翻译：制造晶体半导体膜和半导体器件的方法
公开(公告)号：US20080318398A1
公开(公告)日：2008-12-25
申请号：US11892968
申请日：2007-08-28
申请人： Tomoaki Moriwaka , Koichiro Tanaka
发明人： Tomoaki Moriwaka , Koichiro Tanaka
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L29/4908
摘要： There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized. At that time, an energy period in a length direction in a laser beam spot of the laser beam is 0.5 μm to 10 μm, preferably, 1 μm to 5 μm; an energy distribution in a width direction in a laser beam spot of the laser beam is a Gaussian distribution; and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region.
摘要翻译：提供一种制造结晶半导体膜的方法。在基板上形成绝缘膜; 在绝缘膜上形成非晶半导体膜; 在非晶半导体膜上形成盖膜; 通过盖膜扫描并照射具有大于或等于10MHz的重复率的连续波激光束或激光束的非晶半导体膜; 并使非晶半导体膜熔融并结晶。此时，激光束的激光束点的长度方向的能量周期为0.5μm〜10μm，优选为1〜5μm，激光束的激光束点的宽度方向的能量分布为高斯分布; 并且用激光束扫描非晶半导体膜，以便用激光束照射大于或等于5微秒且小于或等于每个区域100微秒的周期。

3. 发明授权

US07418172B2 Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device 有权
公开(公告)号：US07418172B2
公开(公告)日：2008-08-26
申请号：US10827449
申请日：2004-04-20
申请人： Koichiro Tanaka , Tomoaki Moriwaka
发明人： Koichiro Tanaka , Tomoaki Moriwaka
IPC分类号： G02B6/26
CPC分类号： G02B27/0966 , G02B6/4204 , G02B27/0994 , H01S3/005
摘要： The present invention provides a beam homogenizer being able to form a rectangular beam spot having homogeneous energy distribution in a direction of its major axis without using the optical lens requiring to be manufactured with high accuracy. In addition, the present invention provides a laser irradiation apparatus being able to irradiate the laser beam having homogeneous energy distribution in a direction of its major axis. Furthermore, the present invention provides a method for manufacturing a semiconductor device being able to enhance crystallinity in the surface of the substrate and to manufacture TFT with a high operating characteristic.The beam homogenizer, one of the present invention, is to shape the beam spot on the surface to be irradiated into a rectangular spot having an aspect ratio of 10 or more, preferably 100 or more, and comprises an optical waveguide for homogenizing the energy distribution of the rectangular beam spot in the direction of its major axis.

4. 发明授权

US07953310B2 Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device 有权
标题翻译：光束均化器，激光照射装置以及半导体装置的制造方法
公开(公告)号：US07953310B2
公开(公告)日：2011-05-31
申请号：US12153720
申请日：2008-05-23
申请人： Koichiro Tanaka , Tomoaki Moriwaka
发明人： Koichiro Tanaka , Tomoaki Moriwaka
IPC分类号： G02B6/10
CPC分类号： G02B27/0966 , G02B6/4204 , G02B27/0994 , H01S3/005
摘要： The present invention provides a beam homogenizer being able to form a rectangular beam spot having homogeneous energy distribution in a direction of its major axis without using the optical lens requiring to be manufactured with high accuracy. In addition, the present invention provides a laser irradiation apparatus being able to irradiate the laser beam having homogeneous energy distribution in a direction of its major axis. Furthermore, the present invention provides a method for manufacturing a semiconductor device being able to enhance crystallinity in the surface of the substrate and to manufacture TFT with a high operating characteristic.The beam homogenizer, one of the present invention, is to shape the beam spot on the surface to be irradiated into a rectangular spot having an aspect ratio of 10 or more, preferably 100 or more, and comprises an optical waveguide for homogenizing the energy distribution of the rectangular beam spot in the direction of its major axis.
摘要翻译：本发明提供一种光束均化器，其能够在不需要以高精度制造的光学透镜的情况下形成在其长轴方向上具有均匀能量分布的矩形束斑。此外，本发明提供一种激光照射装置，其能够照射具有在其长轴方向上具有均匀能量分布的激光束。此外，本发明提供了一种能够提高基板表面的结晶度并制造具有高工作特性的TFT的半导体器件的制造方法。本发明之一的光束均化器是将待照射的表面上的束斑成形为纵横比为10以上，优选为100以上的矩形斑点，并且包括用于使能量分布均匀化的光波导的矩形束斑在其长轴方向上。

5. 发明申请

US20080011968A1 Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device 有权
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US20080011968A1
公开(公告)日：2008-01-17
申请号：US11898765
申请日：2007-09-14
申请人： Koichiro Tanaka , Tomoaki Moriwaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Tomoaki Moriwaka , Yoshiaki Yamamoto
IPC分类号： B01J19/12 , B01J19/02
CPC分类号： B23K26/0622 , B23K2101/40
摘要： It is an object of the present invention to provide a laser irradiation apparatus, a laser irradiation method, and a method for manufacturing a semiconductor device using the laser irradiation method that can suppress the energy distribution of the laser beam. The present invention provides a laser irradiation apparatus including a laser oscillator oscillating a pulsed laser beam, a lens assembly having a plurality of optical systems, position control means for controlling the position of the lens assembly to select at least two from the plurality of optical systems in synchronization with oscillations of a plurality of pulses of the pulsed laser beam, wherein the selected plurality of optical systems forms a plurality of pulses with spatial energy distribution inverted or rotated each other.
摘要翻译：本发明的目的是提供一种激光照射装置，激光照射方法和使用能抑制激光束的能量分布的激光照射方法的半导体装置的制造方法。本发明提供一种激光照射装置，其包括振荡脉冲激光束的激光振荡器，具有多个光学系统的透镜组件，位置控制装置，用于控制透镜组件从多个光学系统中选择至少两个的位置与脉冲激光束的多个脉冲的振荡同步，其中所选择的多个光学系统形成具有反转或相互旋转的空间能量分布的多个脉冲。

6. 发明授权

US07078281B2 Method of manufacturing a semiconductor device by providing a mirror in the attenuation region 失效
标题翻译：通过在衰减区域中设置反射镜来制造半导体器件的方法
公开(公告)号：US07078281B2
公开(公告)日：2006-07-18
申请号：US10227922
申请日：2002-08-27
申请人： Koichiro Tanaka , Tomoaki Moriwaka
发明人： Koichiro Tanaka , Tomoaki Moriwaka
IPC分类号： H01L21/00
CPC分类号： H01L21/2026 , B23K26/066 , H01L21/02683 , H01L21/02686 , H01L21/268 , H01L27/12 , H01L27/1285 , H01S3/005
摘要： Attenuation regions of laser light are removed or reduced in size using a slit located in the immediate vicinity of a surface to be irradiated so that a steep energy distribution is obtained in the end portions of the laser light. The reason why the slit is located in the immediate vicinity of the surface to be irradiated is to suppress the spread of the laser light. In addition, the attenuation regions of the laser light are folded by using a mirror instead of the slit to increase energy densities in the attenuation regions by one another so that a steep energy density distribution is obtained in the end portions of the laser light.
摘要翻译：使用位于要照射的表面附近的狭缝，去除或减小激光的衰减区域，使得在激光的端部获得陡峭的能量分布。狭缝位于待照射表面附近的原因是为了抑制激光的扩散。此外，通过使用反射镜而不是狭缝折射激光的衰减区域，以使衰减区域中的能量密度相互增加，使得在激光的端部获得陡峭的能量密度分布。

7. 发明申请

US20050055016A1 Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device 有权
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US20050055016A1
公开(公告)日：2005-03-10
申请号：US10915438
申请日：2004-08-11
申请人： Koichiro Tanaka , Tomoaki Moriwaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Tomoaki Moriwaka , Yoshiaki Yamamoto
IPC分类号： H01L21/324 , B23K26/06 , A61B18/18
CPC分类号： B23K26/0622 , B23K2101/40
摘要： It is an object of the present invention to provide a laser irradiation apparatus, a laser irradiation method, and a method for manufacturing a semiconductor device using the laser irradiation method that can suppress the energy distribution of the laser beam. The present invention provides a laser irradiation apparatus including a laser oscillator oscillating a pulsed laser beam, a lens assembly having a plurality of optical systems, position control means for controlling the position of the lens assembly to select at least two from the plurality of optical systems in synchronization with oscillations of a plurality of pulses of the pulsed laser beam, wherein the selected plurality of optical systems forms a plurality of pulses with spatial energy distribution inverted or rotated each other.
摘要翻译：本发明的目的是提供一种激光照射装置，激光照射方法和使用能抑制激光束的能量分布的激光照射方法的半导体装置的制造方法。本发明提供了一种激光照射装置，其包括振荡脉冲激光束的激光振荡器，具有多个光学系统的透镜组件，位置控制装置，用于控制透镜组件从多个光学系统中选择至少两个的位置与脉冲激光束的多个脉冲的振荡同步，其中所选择的多个光学系统形成具有反转或相互旋转的空间能量分布的多个脉冲。

8. 发明授权

US06765175B2 Laser irradiation apparatus, laser irradiation method, and manufacturing method for a semiconductor device 有权
公开(公告)号：US06765175B2
公开(公告)日：2004-07-20
申请号：US10303085
申请日：2002-11-25
申请人： Koichiro Tanaka , Tomoaki Moriwaka
发明人： Koichiro Tanaka , Tomoaki Moriwaka
IPC分类号： B23K2606
CPC分类号： G02B27/0983 , B23K26/0608 , B23K26/067 , B23K2101/40 , G02B5/09
摘要： The laser irradiation apparatus of the present invention is configured to include a laser and at least two mirrors each having a concave surface for unidirectionally homogenizing an energy density of laser light emitted from the laser. A focal position of a first mirror exists between the first mirror and an irradiation surface. A focal position of a second mirror does not exist between the second mirror and the irradiation surface, but exists behind the irradiation surface. The laser irradiation apparatus thus configured enables laser irradiation of, for example, semiconductor films.

9. 发明授权

US06750423B2 Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US06750423B2
公开(公告)日：2004-06-15
申请号：US10279054
申请日：2002-10-24
申请人： Koichiro Tanaka , Tomoaki Moriwaka
发明人： Koichiro Tanaka , Tomoaki Moriwaka
IPC分类号： B23K26073
CPC分类号： H01L21/02592 , B23K26/0604 , B23K26/0608 , B23K26/067 , B23K26/0732 , B23K26/0736 , B23K26/0738 , H01L27/1285
摘要： In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution.
摘要翻译：在本发明中，从多个激光器发射的各激光被分割，并且使用另一个这样的激光合成包括从不同激光器发射并且具有不同能量分布的至少一个激光的激光或激光包括具有不同能量分布的至少一种激光通过与每个激光行进的方向成一定角度的凸透镜与另一激光合成，以形成具有优异的能量分布均匀性的激光。

10. 发明授权

US08530788B2 Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device 有权
公开(公告)号：US08530788B2
公开(公告)日：2013-09-10
申请号：US10866802
申请日：2004-06-15
申请人： Koichiro Tanaka , Tomoaki Moriwaka
发明人： Koichiro Tanaka , Tomoaki Moriwaka
IPC分类号： B23K26/00
CPC分类号： H01L21/02592 , B23K26/0604 , B23K26/0608 , B23K26/067 , B23K26/0732 , B23K26/0736 , B23K26/0738 , H01L27/1285
摘要： In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution.

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