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    • 4. 发明授权
    • Method for manufacturing electronic component
    • 电子元件制造方法
    • US08382934B2
    • 2013-02-26
    • US13183511
    • 2011-07-15
    • Hiroki HoriguchiYuji KimuraKazuhiro Yoshida
    • Hiroki HoriguchiYuji KimuraKazuhiro Yoshida
    • B29C65/02B32B37/14
    • G01P15/18B81B2201/0235B81B2203/0118B81C1/00269G01P1/023G01P15/0802G01P15/123G01P2015/0828H01L21/50H01L23/10H01L2924/0002Y10T29/49002Y10T156/10H01L2924/00
    • A triaxial acceleration sensor which has a structure including a cover joined to a substrate including a mechanically operable functional unit to be sealed, is adapted in such a way that the joined state can be reliably obtained so as to not interfere with a displacement of the functional unit. A sealing frame is made of a heated polyimide on a periphery of an upper main surface of a substrate provided with a functional unit, and a sealing layer made of a polyimide is formed over an entire lower main surface of a cover. For integrating the substrate and the cover so as to seal the functional unit, the sealing frame and the sealing layer are joined to each other by heating and pressurizing the sealing frame and the sealing layer at a temperature that is about 50° C. to about 150° C. higher than a glass transition temperature of the polyimide while bringing the sealing frame and the sealing layer into contact with each other. In this case, a recess is formed in the vicinity of a portion of the sealing layer to be brought into contact with the sealing frame so that a bump, generated from the sealing layer which is deformed in the joining step, is prevented from protruding toward the functional unit.
    • 一种三轴加速度传感器,其具有包括接合到包括要被密封的机械可操作功能单元的基板的盖的结构,使得可以可靠地获得接合状态,以便不干扰功能的位移 单元。 密封框架由设置有功能单元的基板的上主表面的周边上的加热的聚酰亚胺制成,并且在盖的整个下主表面上形成由聚酰亚胺制成的密封层。 为了整合基板和盖以便密封功能单元,密封框架和密封层通过在约50℃到约50℃的温度下加热和加压密封框架和密封层而彼此接合 比使聚酰亚胺的玻璃化转变温度高150℃,同时使密封框和密封层相互接触。 在这种情况下,在密封层的一部分附近形成凹部以与密封框架接触,从而防止在接合步骤中变形的密封层产生的凸块朝向 功能单元。
    • 7. 发明授权
    • Semiconductor device having a dummy gate
    • 具有虚拟栅极的半导体器件
    • US08026536B2
    • 2011-09-27
    • US11391286
    • 2006-03-29
    • Kazuhiro Yoshida
    • Kazuhiro Yoshida
    • H01L23/52
    • H01L27/092H01L23/5222H01L27/0207H01L2924/0002H01L2924/00
    • A semiconductor device includes a plurality of MOS transistors, wherein each of the MOS transistors has a drain region, a pair of source regions sandwiching therebetween the drain region, and a pair of normal gates each overlying a space between the drain region and a corresponding one of the source regions. A plurality of dummy gates are provided each between adjacent two of the MOS transistors. The dummy gate electrodes are maintained at an equi-potential with the adjacent drain regions. MOS transistors include a row of pMOS transistors and nMOS transistors, wherein each of pMOS transistors and a corresponding nMOS transistor configure a CMOS gate, and a plurality of CMOS gates configure a ring oscillator.
    • 一种半导体器件包括多个MOS晶体管,其中每个MOS晶体管具有漏极区域,一对源极区域夹在它们之间的漏极区域以及一对法向栅极,每对栅极覆盖漏极区域和相应的一个漏极区域之间的空间 的源地区。 在相邻的两个MOS晶体管之间设置多个伪栅极。 虚拟栅极电极与相邻的漏极区域保持等电位。 MOS晶体管包括一行pMOS晶体管和nMOS晶体管,其中pMOS晶体管和相应的nMOS晶体管中的每一个构成CMOS栅极,并且多个CMOS栅极配置环形振荡器。
    • 8. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07952164B2
    • 2011-05-31
    • US12607450
    • 2009-10-28
    • Kazuhiro Yoshida
    • Kazuhiro Yoshida
    • H01L29/00H01L29/8605
    • H01L27/101H01L27/0802
    • The semiconductor device includes a resistor cell that includes a diffused layer resistor, a P-well contact and an N-well contact. The diffused layer resistor is arranged on a semiconductor substrate and is formed by a diffused layer. The P-well contact surrounds an outer rim of the diffused layer resistor and is formed by another diffused layer. The N-well contact is arranged surrounding the outer rim of the P-well contact and is formed by a further diffused layer. Both the P-well and N-well contacts are partitioned into contact portions. Control electrode layer portions are arranged between neighboring contact sections of the P-well contact so the contact sections of the P-well contact and the control electrode layer portions alternate. Control electrode layer portions are arranged between neighboring contact sections of the N-well contact so that the contact sections of the N-well contact and the control electrode layer portions alternate with one another.
    • 该半导体器件包括电阻单元,其包括扩散层电阻器,P阱触点和N阱触点。 扩散层电阻器布置在半导体衬底上并且由扩散层形成。 P阱接触包围扩散层电阻器的外缘,并由另一个扩散层形成。 N阱接触设置在P阱接触的外缘周围,并由另外的扩散层形成。 P阱和N阱触点都被分隔成接触部分。 控制电极层部分布置在P阱触点的相邻接触部分之间,使得P阱触点和控制电极层部分的接触部分交替。 控制电极层部分布置在N阱接触的相邻接触部分之间,使得N阱接触部分和控制电极层部分的接触部分彼此交替。
    • 9. 发明申请
    • PUMP MOTOR MOUNTING STRUCTURE FOR ICE MAKING MACHINE
    • 用于制冰机的泵电机安装结构
    • US20100307182A1
    • 2010-12-09
    • US12734705
    • 2008-07-30
    • Kazuhiro YoshidaYuji WakatsukiHideji OhtaHiroki YamaguchiYushi Yonekura
    • Kazuhiro YoshidaYuji WakatsukiHideji OhtaHiroki YamaguchiYushi Yonekura
    • F25C1/00
    • F25C1/04F25C1/25F25C2400/14
    • The object is to prevent decrease in efficiency in making ice, penetration of dust into an ice making chamber, and the like and also simplify operation of taking in and out an ice making water tank. A tank housing area 30 is provided from an ice making chamber across a machine chamber 12, and an ice making water tank T is housed, allowing it to be drawn out, in the tank housing area 30. A motor mounting member 36 sectioning the machine chamber 12 and the tank housing area 30 is detachably placed on an upper end placement portion 32B of a partition wall 32 sectioning the machine chamber 12 and the tank housing area 30. A pump motor PM is mounted on a side of the motor mounting member 36 facing the machine chamber 12, and a pump WP is mounted on a side of the motor mounting member 36 facing the tank housing area 30. The motor mounting member 36 is supported from below by motor support pieces 74 provided in the ice making water tank T.
    • 其目的在于防止制冰时的效率降低,灰尘进入制冰室等,并简化了制冰水箱的进出运转。 从制冰室穿过机器室12提供储罐容纳区域30,并且容纳制冰水箱T,使其能够被抽出到罐容纳区域30中。将机器分段的马达安装构件36 室12和储罐容纳区域30可拆卸地放置在分隔壁12的上部端部放置部分32B上,该分隔壁32将机器室12和罐容纳区域30分段。泵电动机PM安装在电动机安装件36的一侧 面对机器室12,并且泵WP安装在电机安装构件36的面向箱体容纳区域30的一侧。电动机安装构件36由设置在制冰水箱T中的电动机支撑件74从下方支撑 。