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1. 发明授权

US07745288B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07745288B2
公开(公告)日：2010-06-29
申请号：US11717053
申请日：2007-03-13
申请人： Koichi Toba , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Kentaro Saito , Toshikazu Matsui , Takashi Hashimoto , Kosuke Okuyama
发明人： Koichi Toba , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Kentaro Saito , Toshikazu Matsui , Takashi Hashimoto , Kosuke Okuyama
IPC分类号： H01L21/336
CPC分类号： H01L29/42324 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11526 , H01L27/11531 , H01L29/66825 , H01L29/66833 , H01L29/7885
摘要： A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.
摘要翻译：公开了一种具有非易失性存储器的半导体器件，其干扰缺陷可被减弱或防止。非易失性存储器的存储单元具有通过用于电荷存储的绝缘膜形成在半导体衬底的主表面上的存储栅电极。第一侧壁形成在存储栅电极的侧面上，在第一侧壁的侧面形成有第二侧壁。在存储单元中用于源极的n +型半导体区域的上表面上形成硅化物层，其存储栅极电极MG侧的端部由第二侧壁限定。

2. 发明授权

US08530958B2 Semiconductor device having split gate type, non-volatile memory cells and a method of manufacturing the same 有权
标题翻译：具有分裂门型，非易失性存储单元的半导体器件及其制造方法
公开(公告)号：US08530958B2
公开(公告)日：2013-09-10
申请号：US12718002
申请日：2010-03-05
申请人： Koichi Toba , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Kentaro Saito , Toshikazu Matsui , Takashi Hashimoto , Kosuke Okuyama
发明人： Koichi Toba , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Kentaro Saito , Toshikazu Matsui , Takashi Hashimoto , Kosuke Okuyama
IPC分类号： H01L29/792
CPC分类号： H01L29/42324 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11526 , H01L27/11531 , H01L29/66825 , H01L29/66833 , H01L29/7885
摘要： A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.
摘要翻译：公开了一种具有非易失性存储器的半导体器件，其干扰缺陷可被减弱或防止。非易失性存储器的存储单元具有通过用于电荷存储的绝缘膜形成在半导体衬底的主表面上的存储栅电极。第一侧壁形成在存储栅电极的侧面上，在第一侧壁的侧面形成有第二侧壁。在存储单元中用于源极的n +型半导体区域的上表面上形成硅化物层，其存储栅极电极MG侧的端部由第二侧壁限定。

3. 发明申请

US20070228446A1 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070228446A1
公开(公告)日：2007-10-04
申请号：US11717053
申请日：2007-03-13
申请人： Koichi Toba , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Kentaro Saito , Toshikazu Matsui , Takashi Hashimoto , Kosuke Okuyama
发明人： Koichi Toba , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Kentaro Saito , Toshikazu Matsui , Takashi Hashimoto , Kosuke Okuyama
IPC分类号： H01L29/76
CPC分类号： H01L29/42324 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11526 , H01L27/11531 , H01L29/66825 , H01L29/66833 , H01L29/7885
摘要： A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.
摘要翻译：公开了一种具有非易失性存储器的半导体器件，其干扰缺陷可被减弱或防止。非易失性存储器的存储单元具有通过用于电荷存储的绝缘膜形成在半导体衬底的主表面上的存储栅电极。第一侧壁形成在存储栅电极的侧面上，在第一侧壁的侧面形成有第二侧壁。在存储单元中用于源极的n + + / - 型半导体区域的上表面上形成硅化物层，其存储栅电极MG侧的端部由第二侧壁限定。

4. 发明申请

US20100237404A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100237404A1
公开(公告)日：2010-09-23
申请号：US12718002
申请日：2010-03-05
申请人： KOICHI TOBA , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Kentaro Saito , Toshikazu Matsui , Takashi Hashimoto , Kosuke Okuyama
发明人： KOICHI TOBA , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Kentaro Saito , Toshikazu Matsui , Takashi Hashimoto , Kosuke Okuyama
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/42324 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11526 , H01L27/11531 , H01L29/66825 , H01L29/66833 , H01L29/7885
摘要： A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.
摘要翻译：公开了一种具有非易失性存储器的半导体器件，其干扰缺陷可被减弱或防止。非易失性存储器的存储单元具有通过用于电荷存储的绝缘膜形成在半导体衬底的主表面上的存储栅电极。第一侧壁形成在存储栅电极的侧面上，在第一侧壁的侧面形成有第二侧壁。在存储单元中用于源极的n +型半导体区域的上表面上形成硅化物层，其存储栅极电极MG侧的端部由第二侧壁限定。

5. 发明授权

US07863670B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07863670B2
公开(公告)日：2011-01-04
申请号：US12490147
申请日：2009-06-23
申请人： Yasushi Ishii , Takashi Hashimoto , Yoshiyuki Kawashima , Koichi Toba , Satoru Machida , Kozo Katayama , Kentaro Saito , Toshikazu Matsui
发明人： Yasushi Ishii , Takashi Hashimoto , Yoshiyuki Kawashima , Koichi Toba , Satoru Machida , Kozo Katayama , Kentaro Saito , Toshikazu Matsui
IPC分类号： H01L29/792
CPC分类号： H01L27/115 , H01L21/823462 , H01L27/0629 , H01L27/0922 , H01L27/105 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L29/6653
摘要： In a semiconductor device which includes a split-gate type memory cell having a control gate and a memory gate, a low withstand voltage MISFET and a high withstand voltage MISFET, variations of the threshold voltage of the memory cell are suppressed. A gate insulating film of a control gate is thinner than a gate insulating film of a high withstand voltage MISFET, the control gate is thicker than a gate electrode 14 of the low withstand voltage MISFET and the ratio of thickness of a memory gate with respect to the gate length of the memory gate is larger than 1. The control gate and a gate electrode 15 are formed in a multilayer structure including an electrode material film 8A and an electrode material layer 8B, and the gate electrode 14 is a single layer structure formed at the same time as the electrode material film 8A of the control gate.
摘要翻译：在包括具有控制栅极和存储器栅极的分离栅极型存储单元，低耐压MISFET和高耐压MISFET的半导体器件中，抑制了存储单元的阈值电压的变化。控制栅极的栅极绝缘膜比高耐压MISFET的栅极绝缘膜薄，控制栅极比低耐压MISFET的栅电极14厚，存储栅的厚度比相对于存储器栅极的栅极长度大于1.控制栅极和栅电极15形成为包括电极材料膜8A和电极材料层8B的多层结构，并且栅电极14是形成的单层结构同时作为控制栅极的电极材料膜8A。

6. 发明申请

US20070262382A1 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070262382A1
公开(公告)日：2007-11-15
申请号：US11727591
申请日：2007-03-27
申请人： Yasushi Ishii , Takashi Hashimoto , Yoshiyuki Kawashima , Koichi Toba , Satoru Machida , Kozo Katayama , Kentaro Saito , Toshikazu Matsui
发明人： Yasushi Ishii , Takashi Hashimoto , Yoshiyuki Kawashima , Koichi Toba , Satoru Machida , Kozo Katayama , Kentaro Saito , Toshikazu Matsui
IPC分类号： H01L27/12 , H01L27/01 , H01L31/0392 , H01L21/8234 , H01L21/336
CPC分类号： H01L27/115 , H01L21/823462 , H01L27/0629 , H01L27/0922 , H01L27/105 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L29/6653
摘要： In a semiconductor device which includes a split-gate type memory cell having a control gate and a memory gate, a low withstand voltage MISFET and a high withstand voltage MISFET, variations of the threshold voltage of the memory cell are suppressed. A gate insulating film of a control gate is thinner than a gate insulating film of a high withstand voltage MISFET, the control gate is thicker than a gate electrode 14 of the low withstand voltage MISFET and the ratio of thickness of a memory gate with respect to the gate length of the memory gate is larger than 1. The control gate and a gate electrode 15 are formed in a multilayer structure including an electrode material film 8A and an electrode material layer 8B, and the gate electrode 14 is a single layer structure formed at the same time as the electrode material film 8A of the control gate.
摘要翻译：在包括具有控制栅极和存储器栅极的分离栅极型存储单元，低耐压MISFET和高耐压MISFET的半导体器件中，抑制了存储单元的阈值电压的变化。控制栅极的栅极绝缘膜比高耐压MISFET的栅极绝缘膜薄，控制栅极比低耐压MISFET的栅电极14厚，存储栅的厚度比相对于存储器栅极的栅极长度大于1.控制栅极和栅极电极15形成为包括电极材料膜8A和电极材料层8B的多层结构，并且栅电极14是单层结构与控制门的电极材料膜8A同时形成。

7. 发明申请

US20090256193A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090256193A1
公开(公告)日：2009-10-15
申请号：US12490147
申请日：2009-06-23
申请人： YASUSHI ISHII , Takashi Hashimoto , Yoshiyuki Kawashima , Koichi Toba , Satoru Machida , Kozo Katayama , Kentaro Saito , Toshikazu Matsui
发明人： YASUSHI ISHII , Takashi Hashimoto , Yoshiyuki Kawashima , Koichi Toba , Satoru Machida , Kozo Katayama , Kentaro Saito , Toshikazu Matsui
IPC分类号： H01L29/792
CPC分类号： H01L27/115 , H01L21/823462 , H01L27/0629 , H01L27/0922 , H01L27/105 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L29/6653
摘要： In a semiconductor device which includes a split-gate type memory cell having a control gate and a memory gate, a low withstand voltage MISFET and a high withstand voltage MISFET, variations of the threshold voltage of the memory cell are suppressed. A gate insulating film of a control gate is thinner than a gate insulating film of a high withstand voltage MISFET, the control gate is thicker than a gate electrode 14 of the low withstand voltage MISFET and the ratio of thickness of a memory gate with respect to the gate length of the memory gate is larger than 1. The control gate and a gate electrode 15 are formed in a multilayer structure including an electrode material film 8A and an electrode material layer 8B, and the gate electrode 14 is a single layer structure formed at the same time as the electrode material film 8A of the control gate.
摘要翻译：在包括具有控制栅极和存储器栅极的分离栅极型存储单元，低耐压MISFET和高耐压MISFET的半导体器件中，抑制了存储单元的阈值电压的变化。控制栅极的栅极绝缘膜比高耐压MISFET的栅极绝缘膜薄，控制栅极比低耐压MISFET的栅电极14厚，存储栅的厚度比相对于存储器栅极的栅极长度大于1.控制栅极和栅电极15形成为包括电极材料膜8A和电极材料层8B的多层结构，并且栅电极14是形成的单层结构同时作为控制栅极的电极材料膜8A。

8. 发明授权

US07557005B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07557005B2
公开(公告)日：2009-07-07
申请号：US11727591
申请日：2007-03-27
申请人： Yasushi Ishii , Takashi Hashimoto , Yoshiyuki Kawashima , Koichi Toba , Satoru Machida , Kozo Katayama , Kentaro Saito , Toshikazu Matsui
发明人： Yasushi Ishii , Takashi Hashimoto , Yoshiyuki Kawashima , Koichi Toba , Satoru Machida , Kozo Katayama , Kentaro Saito , Toshikazu Matsui
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L21/823462 , H01L27/0629 , H01L27/0922 , H01L27/105 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L29/6653
摘要： In a semiconductor device which includes a split-gate type memory cell having a control gate and a memory gate, a low withstand voltage MISFET and a high withstand voltage MISFET, variations of the threshold voltage of the memory cell are suppressed. A gate insulating film of a control gate is thinner than a gate insulating film of a high withstand voltage MISFET, the control gate is thicker than a gate electrode 14 of the low withstand voltage MISFET and the ratio of thickness of a memory gate with respect to the gate length of the memory gate is larger than 1. The control gate and a gate electrode 15 are formed in a multilayer structure including an electrode material film 8A and an electrode material layer 8B, and the gate electrode 14 is a single layer structure formed at the same time as the electrode material film 8A of the control gate.
摘要翻译：在包括具有控制栅极和存储器栅极的分离栅极型存储单元，低耐压MISFET和高耐压MISFET的半导体器件中，抑制了存储单元的阈值电压的变化。控制栅极的栅极绝缘膜比高耐压MISFET的栅极绝缘膜薄，控制栅极比低耐压MISFET的栅电极14厚，存储栅的厚度比相对于存储器栅极的栅极长度大于1.控制栅极和栅电极15形成为包括电极材料膜8A和电极材料层8B的多层结构，并且栅电极14是形成的单层结构同时作为控制栅极的电极材料膜8A。

9. 发明申请

US20080029825A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080029825A1
公开(公告)日：2008-02-07
申请号：US11882594
申请日：2007-08-02
申请人： Kentaro Saito , Yasushi Ishii , Munekatsu Nakagawa , Satoru Machida , Masaru Nakamichi
发明人： Kentaro Saito , Yasushi Ishii , Munekatsu Nakagawa , Satoru Machida , Masaru Nakamichi
IPC分类号： H01L29/76 , H01L21/3205
CPC分类号： H01L27/1104 , H01L21/28518 , H01L21/76889 , H01L21/76895 , H01L21/76897 , H01L27/11 , H01L29/6656 , H01L29/7833
摘要： Even if it is the semiconductor device provided with the wiring on an isolation insulating film, the sidewall formed on the side surface of this wiring, and the shared contact which connects the wiring and the impurity diffusion on an active region, the semiconductor device which can suppress the generation of the leakage current from shared contact to a semiconductor substrate, and its manufacturing method are offered. The semiconductor device concerning the present invention is provided with an isolation insulating film selectively formed on the main front surface of a semiconductor substrate, an active region specified by an isolation insulating film on the main front surface of a semiconductor substrate, a recess which reaches an active region on the isolation insulating film, the first insulating film formed so that a recess might be covered, the second insulating film which is formed on a first insulating film, is filled up with a recess, and differs in a material from the first insulating film, an impurity diffused layer formed on the main front surface of the active region of the position which adjoins the recess, and an electric conduction film formed on the impurity diffused layer.
摘要翻译：即使是在隔离绝缘膜上设置布线的半导体器件，形成在该布线的侧面上的侧壁和将布线和有源区域上的杂质扩散连接的共用接点，也可以是可以抑制从共用接触到半导体基板的漏电流的产生，提供其制造方法。关于本发明的半导体器件具有选择性地形成在半导体衬底的主表面上的隔离绝缘膜，由半导体衬底的主表面上的隔离绝缘膜指定的有源区，到达在隔离绝缘膜上的有源区，形成为可以覆盖凹部的第一绝缘膜，形成在第一绝缘膜上的第二绝缘膜填充有凹部，并且材料与第一绝缘膜不同膜，形成在邻接凹部的位置的有源区的主表面上的杂质扩散层和形成在杂质扩散层上的导电膜。

10. 发明授权

US09159843B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09159843B2
公开(公告)日：2015-10-13
申请号：US13476356
申请日：2012-05-21
申请人： Kentaro Saito , Kazumasa Yanagisawa , Yasushi Ishii , Koichi Toba
发明人： Kentaro Saito , Kazumasa Yanagisawa , Yasushi Ishii , Koichi Toba
IPC分类号： H01L29/778 , H01L21/336 , H01L29/792 , H01L21/28 , H01L27/115 , H01L29/423 , H01L29/66 , G11C16/04
CPC分类号： H01L29/792 , G11C16/0466 , H01L21/28282 , H01L27/11573 , H01L29/4234 , H01L29/66833
摘要： To improve the electric performance and reliability of a semiconductor device. A memory gate electrode of a split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 6a and a silicon film 6b over the metal film 6a. In an upper end part of the metal film 6a, a metal oxide portion 17 is formed by oxidation of a part of the metal film 6a. A control gate electrode of the split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 4a and the silicon film 4b over the metal film 4a.
摘要翻译：提高半导体器件的电气性能和可靠性。分闸式非易失性存储器的存储栅极是由金属膜6a上的金属膜6a和硅膜6b的叠层膜形成的金属栅电极。在金属膜6a的上端部分，通过氧化金属膜6a的一部分而形成金属氧化物部分17。分闸式非易失性存储器的控制栅电极是由金属膜4a的叠层膜和金属膜4a上的硅膜4b形成的金属栅电极。

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