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    • 1. 发明授权
    • Method for producing thin-film electro luminescent device
    • 薄膜电致发光器件的制造方法
    • US5614133A
    • 1997-03-25
    • US415473
    • 1995-03-31
    • Koichi TanakaMasaru Yoshida
    • Koichi TanakaMasaru Yoshida
    • H05B33/10H05B33/12H05B33/14G09K11/00
    • H05B33/10
    • The present invention is directed to a method and an apparatus for producing thin-film EL devices with short annealing treatment times and excellent productivity.A substrate to be subjected to annealing treatment is mounted on the surface of a stage. The substrate to be treated is constructed by forming lower electrodes, a lower insulating layer, an EL layer and an upper insulating layer in that order on a translucent substrate. Light-irradiating means is provided above and opposite the surface of the stage. The light-irradiating means includes a plurality of light sources and a reflecting panel, and the light sources are situated along each of a plurality of concavities provided in the reflecting panel. Light from the light sources irradiates roughly the entire surface of the substrate to be treated. The light from the light sources is selected so as to include the absorption wavelength band of the electrode material of the lower electrodes on the substrate. When a prescribed temperature is reached, the light irradiation is terminated to allow cooling.
    • 本发明涉及一种用于制造短退火处理时间和优异生产率的薄膜EL器件的方法和设备。 将要进行退火处理的基材安装在载物台的表面上。 通过在半透明基板上依次形成下电极,下绝缘层,EL层和上绝缘层来构成被处理基板。 在舞台的表面的上方和对面设置有光照射装置。 光照射装置包括多个光源和反射面板,并且光源沿着设置在反射面板中的多个凹部中的每一个设置。 来自光源的光大致照射待处理的基板的整个表面。 选择来自光源的光,以便包括基板上的下电极的电极材料的吸收波长带。 当达到规定的温度时,光照射终止以允许冷却。