专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07897868B2 Stacked photovoltaic element and method for producing the same 失效
标题翻译：叠层光电元件及其制造方法
公开(公告)号：US07897868B2
公开(公告)日：2011-03-01
申请号：US10807103
申请日：2004-03-24
申请人： Koichi Matsuda , Makoto Higashikawa , Tetsuro Nakamura
发明人： Koichi Matsuda , Makoto Higashikawa , Tetsuro Nakamura
IPC分类号： H01L31/0392 , H01L31/0376
CPC分类号： H01L31/0687 , H01L31/046 , H01L31/0549 , H01L31/076 , H01L31/1824 , H01L31/202 , Y02E10/52 , Y02E10/544 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A stacked photovoltaic element comprising a plurality of unit photovoltaic elements each composed of a pn- or pin-junction, connected to each other in series, wherein a zinc oxide layer is provided at least one position between the unit photovoltaic elements, and the zinc oxide layer has resitivity varying in the thickness direction.
摘要翻译：一种堆叠的光伏元件，包括多个单元光电元件，每个单元光伏元件各自由pn或pin-junction组成，彼此串联连接，其中氧化锌层设置在单元光电元件和氧化锌之间的至少一个位置层具有在厚度方向上变化的电位。

2. 发明申请

US20050034665A1 Apparatus for forming a film by CVD 审中-公开
标题翻译：用于通过CVD形成膜的装置
公开(公告)号：US20050034665A1
公开(公告)日：2005-02-17
申请号：US10948342
申请日：2004-09-24
申请人： Takaharu Kondo , Masafumi Sano , Koichi Matsuda , Makoto Higashikawa
发明人： Takaharu Kondo , Masafumi Sano , Koichi Matsuda , Makoto Higashikawa
IPC分类号： C23C16/24 , C23C16/509 , C23C16/54 , C30B25/10 , H01L21/205 , H01L31/0376 , H01L31/04 , H01L31/18 , C23C16/00
CPC分类号： C23C16/24 , C23C16/5096 , C23C16/545 , C30B25/105 , C30B29/06 , H01L21/0237 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/0376 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.
摘要翻译：通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件在基底和地球之间。所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

3. 发明授权

US06706336B2 Silicon-based film, formation method therefor and photovoltaic element 失效
标题翻译：硅基薄膜，其形成方法和光电元件
公开(公告)号：US06706336B2
公开(公告)日：2004-03-16
申请号：US10055974
申请日：2002-01-28
申请人： Takaharu Kondo , Masafumi Sano , Koichi Matsuda , Makoto Higashikawa
发明人： Takaharu Kondo , Masafumi Sano , Koichi Matsuda , Makoto Higashikawa
IPC分类号： C23C1624
CPC分类号： H01J37/32467 , C23C16/24 , C23C16/4404 , H01L21/02422 , H01L21/02425 , H01L21/02491 , H01L21/02505 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L31/022466 , H01L31/022475 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： A silicon-based film of excellent photoelectric characteristics can be obtained by introducing a source gas containing silicon halide and hydrogen into the interior of a vacuum vessel, at least a part of the interior being covered with a silicon-containing solid, generating plasma in the space of the interior of the vacuum vessel, and forming a silicon-based film on a substrate provided in the interior of the vacuum vessel.
摘要翻译：通过将含有卤化硅和氢气的源气体引入真空容器的内部可以获得优异的光电特性的硅基膜，至少一部分内部被含硅固体覆盖，在真空容器内部的空间，并且在设置在真空容器内部的基板上形成硅基膜。

4. 发明授权

US06706335B2 Method of forming silicon-based thin film 有权
标题翻译：形成硅基薄膜的方法
公开(公告)号：US06706335B2
公开(公告)日：2004-03-16
申请号：US09865549
申请日：2001-05-29
申请人： Takaharu Kondo , Koichi Matsuda , Makoto Higashikawa
发明人： Takaharu Kondo , Koichi Matsuda , Makoto Higashikawa
IPC分类号： H05H102
CPC分类号： H01L31/202 , C23C16/24 , C23C16/509 , C30B25/105 , C30B29/06 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/03767 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： In a high frequency plasma CVD using a source gas comprising a silicon halide and hydrogen, the value of Q defined by Q=Po×PR/S/d is controlled so as to be 50 or more, wherein Po (W) is a supplied power, S (cm2) is the area of a high frequency introducing electrode, d (cm) is a distance between the high frequency introducing electrode and a substrate, and PR (mTorr) is a pressure. Thereby, a method of forming a silicon thin film, a silicon thin film and a photovoltaic element excellent in photoelectric characteristics are provided which attain a film forming rate of an industrially practical level.
摘要翻译：在使用包含硅卤化物和氢的源气体的高频等离子体CVD中，由Q = PoxPR / S / d定义的Q值为50以上，其中Po（W）为供电电力， S（cm 2）是高频引入电极的面积，d（cm）是高频引入电极和衬底之间的距离，PR（mTorr）是压力。因此，提供了一种形成硅薄膜，硅薄膜和光电特性优异的光电元件的方法，其获得了工业实用水平的成膜速率。

5. 发明授权

US06812499B2 Silicon-based film and photovoltaic element 失效
标题翻译：硅基薄膜和光电元件
公开(公告)号：US06812499B2
公开(公告)日：2004-11-02
申请号：US09982845
申请日：2001-10-22
申请人： Takaharu Kondo , Makoto Higashikawa , Masafumi Sano , Koichi Matsuda
发明人： Takaharu Kondo , Makoto Higashikawa , Masafumi Sano , Koichi Matsuda
IPC分类号： H01L3300
CPC分类号： H01L31/075 , H01L31/03682 , H01L31/03767 , H01L31/076 , H01L31/1804 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A silicon based film is provided which comprises a crystal phase formed on a substrate with a surface shape represented by a function f, wherein the silicon-based film is formed on a substrate with a surface shape having a standard deviation of an inclination arctan (df/dx) from 15° to 55° within the range of a sampling length dx from 20 nm to 100 nm. Raman scattering strength resulting from an amorphous component in the silicon-based film is not more than a Raman scattering strength resulting from a crystalline component. A difference between a spacing in a direction parallel to a principal surface of the substrate and a spacing of a single crystal silicon is within the range of 0.2% to 1.0% with regard to the spacing of the single crystal silicon.
摘要翻译：提供了一种硅基膜，其包括形成在具有由功能f表示的表面形状的基板上的晶相，其中所述硅基膜形成在具有倾斜度的标准偏差（df）的表面形状的基板上 / dx）在20nm至100nm的采样长度dx的范围内从15°至55°。由硅基膜中的无定形成分产生的拉曼散射强度不大于由结晶成分产生的拉曼散射强度。相对于单晶硅的间隔，平行于基板的主面的方向的间隔和单晶硅的间隔之间的差在0.2％〜1.0％的范围内。

6. 发明授权

US06803080B2 Method of forming crystalline silicon film by CVD 失效
标题翻译：通过CVD形成晶体硅膜的方法
公开(公告)号：US06803080B2
公开(公告)日：2004-10-12
申请号：US10231308
申请日：2002-08-30
申请人： Takaharu Kondo , Masafumi Sano , Koichi Matsuda , Makoto Higashikawa
发明人： Takaharu Kondo , Masafumi Sano , Koichi Matsuda , Makoto Higashikawa
IPC分类号： H05H102
CPC分类号： C23C16/24 , C23C16/5096 , C23C16/545 , C30B25/105 , C30B29/06 , H01L21/0237 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/0376 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.
摘要翻译：通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件在基底和地球之间。所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

7. 发明授权

US06472248B2 Microcrystalline series photovoltaic element and process for fabrication of same 有权
标题翻译：微晶系列光电元件及其制造方法
公开(公告)号：US06472248B2
公开(公告)日：2002-10-29
申请号：US09758345
申请日：2001-01-12
申请人： Atsushi Shiozaki , Masafumi Sano , Toshimitsu Kariya , Takaharu Kondo , Makoto Higashikawa , Koichi Matsuda
发明人： Atsushi Shiozaki , Masafumi Sano , Toshimitsu Kariya , Takaharu Kondo , Makoto Higashikawa , Koichi Matsuda
IPC分类号： H01L2100
CPC分类号： H01L31/03685 , H01L21/0237 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02675 , H01L31/028 , H01L31/03926 , H01L31/048 , H01L31/075 , H01L31/076 , H01L31/1824 , H01L31/1872 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.
摘要翻译：一种具有叠层结构的光电元件，包括不含结晶相的第一半导体层，含有近似球形微晶相的第二半导体层，以及包含柱状微晶相的第三半导体层，该第三半导体层依次层叠，其中所述所述第三半导体层侧的第二半导体层的平均尺寸大于所述第二半导体层在所述第一半导体层一侧的所述球形微晶相的平均尺寸。

8. 发明申请

US20110085228A1 REFLECTION TYPE DISPLAY APPARATUS 失效
标题翻译：反射型显示装置
公开(公告)号：US20110085228A1
公开(公告)日：2011-04-14
申请号：US12969649
申请日：2010-12-16
申请人： Hajime Ikeda , Makoto Higashikawa
发明人： Hajime Ikeda , Makoto Higashikawa
IPC分类号： G02B26/00
CPC分类号： G02F1/1506
摘要： A display apparatus using electroplating on an electrode for modulating light includes a layer formed on the electrode. The layer has an insulator with a gap therein, and conductive fine particles are dispersed in the gap.
摘要翻译：在用于调制光的电极上使用电镀的显示装置包括在电极上形成的层。该层具有在其中具有间隙的绝缘体，并且导电细颗粒分散在间隙中。

9. 发明授权

US06252158B1 Photovoltaic element and solar cell module 有权
标题翻译：光伏元件和太阳能电池组件
公开(公告)号：US06252158B1
公开(公告)日：2001-06-26
申请号：US09333002
申请日：1999-06-15
申请人： Makoto Higashikawa
发明人： Makoto Higashikawa
IPC分类号： H01L3100
CPC分类号： H01L31/0725 , Y02E10/50
摘要： A photovoltaic element has a first conduction type semiconductor layer 103 of the n+-type or the p+-type, an intrinsic semiconductor layer 108 of the i-type, and a second conduction type semiconductor layer 105 of the p+-type or the n+-type successively stacked on a substrate 101. When a unit 107 is defined as a set of a first microcrystal silicon base semiconductor layer 103 and a second microcrystal silicon base semiconductor layer 104 of mutually different absorption coefficients at 800 nm, the i-type layer 108 includes at least two such units. This makes it possible to provide the photovoltaic element that can absorb the light efficiently with avoiding the light degradation phenomenon (Staebler-Wronski effect) specific to amorphous semiconductors and that has good electric characteristics (mobility &mgr;, lifetime &tgr;) and the like.
摘要翻译：光电元件具有n +型或p +型的第一导电型半导体层103，i型的本征半导体层108和p +型或n +型的第二导电型半导体层105。当单元107被定义为在800nm处具有相互不同的吸收系数的第一微晶硅基底半导体层103和第二微晶硅基底半导体层104的集合时，i型层108 包括至少两个这样的单元。这使得可以提供能够有效地吸收光的光电元件，同时避免特定于非晶半导体的光劣化现象（Staebler-Wronski效应）并且具有良好的电特性（迁移率μ，寿命）等。

10. 发明授权

US5981934A Photovoltaic element having a transparent conductive layer with specified fractal dimension and fractal property 失效
$Photovoltaic element having a transparent conductive layer with specified fractal dimension and fractal property$
标题翻译：具有具有特定分形维数和分形特性的透明导电层的光伏元件
公开(公告)号：US5981934A
公开(公告)日：1999-11-09
申请号：US925751
申请日：1997-09-09
申请人： Makoto Higashikawa
发明人： Makoto Higashikawa
IPC分类号： H01L31/0236 , H01L31/052 , H01L31/075 , H01L31/18 , H01L31/20 , H01J40/14
CPC分类号： H01L31/0236 , H01L31/056 , H01L31/075 , H01L31/1884 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： This invention is to provide a photovoltaic element capable of improving the production yield in the manufacturing process and the reliability such as the weather resistance and the durability, while also improving the photoelectric conversion efficiency by the light enclosing effect. For attaining such object, the photovoltaic element is featured by a fact that the transparent conductive layer, positioned between the substrate and the semiconductor layers, is provided, at a face in contact with the semiconductor layers, with a fractal structure of a fractal dimension D within a range of 1.01.ltoreq.D.ltoreq.1.20 at least within a dimensional range from 40 to 400 nm.
摘要翻译：本发明提供能够提高制造工序中的制造成品率和耐候性，耐久性等可靠性的光电元件，同时通过光封闭效果提高光电转换效率。为了实现上述目的，光电元件的特征在于，位于基板和半导体层之间的透明导电层在与半导体层接触的面上具有分形维数D的分形结构至少在40至400nm的尺寸范围内，在1.01≤D≤1.020的范围内。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式