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1. 发明授权

US07253801B2 Input device of 3-D translation and rotation and its method and recording medium 有权
标题翻译： 3-D平移和旋转的输入装置及其方法和记录介质
公开(公告)号：US07253801B2
公开(公告)日：2007-08-07
申请号：US10728997
申请日：2003-12-05
申请人： Koichi Kato , Kenji Mochizuki , Shinichi Meguro
发明人： Koichi Kato , Kenji Mochizuki , Shinichi Meguro
IPC分类号： G09G5/08 , H04N7/00 , G02B27/22
CPC分类号： G06F3/0325 , G06F3/0346 , G06F3/037 , G06F3/04845
摘要： A photo device condenses the bright spot on the display to project the spot light onto the projection plane, thereby projecting it onto photo detectors the projection plane. A counter counts the time from the time of a vertical sync signal and supplies its output to AND gates. A correspondence detector brings bright spot display positions on the display at multiple times into correspondence with their projection positions on the photo device in accordance to recording time. An extrinsic parameter calculator calculates the 3-D translation and rotation of the photo device with respect to the bright spot scanning surface of the display from at least three sets of the bright spot display positions and their corresponding projection positions.
摘要翻译：照片装置将亮点聚集在显示器上以将光束投影到投影平面上，从而将其投影到投影平面的光电检测器上。计数器从垂直同步信号的时间计数时间，并将其输出提供给与门。对应检测器根据记录时间在显示器上使亮点显示位置与照相装置上的投影位置相对应地多次显示。外部参数计算器从至少三组亮点显示位置及其对应的投影位置计算照相装置相对于显示器的亮点扫描表面的3-D平移和旋转。

2. 发明授权

US06710765B1 Input device of 3-D translation and rotation and its method and recording medium 有权
标题翻译： 3-D平移和旋转的输入装置及其方法和记录介质
公开(公告)号：US06710765B1
公开(公告)日：2004-03-23
申请号：US09678274
申请日：2000-10-03
申请人： Koichi Kato , Kenji Mochizuki , Shinichi Meguro
发明人： Koichi Kato , Kenji Mochizuki , Shinichi Meguro
IPC分类号： G09G508
CPC分类号： G06F3/0325 , G06F3/0346 , G06F3/037 , G06F3/04845
摘要： A device and method can carry out reliable visceral 3-D input over a wide range at arbitrary measuring time intervals without being affected from electric field or temperature, with requiring small installation space. A bright spot is displayed on the display surface of a display by scanning. A photo device condenses the bright spot on the display to project the spot light onto the projection plane, thereby projecting it onto photo detectors the projection plane. A counter counts the time from the time of a vertical sync signal, and supplies its output to AND gates. A correspondence detector brings bright spot display positions on the display at multiple times into correspondence with their projection positions on the photo device in accordance to recording time. An extrinsic parameter calculator calculates the 3-D translation and rotation of the photo device with respect to the bright spot scanning surface of the display from at least three sets of the bright spot display positions and their corresponding projection positions.
摘要翻译：可以任意测量时间间隔在宽范围内进行可靠的内脏3-D输入的设备和方法，而不受电场或温度的影响，并且需要较小的安装空间。通过扫描在显示器的显示面上显示亮点。照片装置将亮点聚集在显示器上以将光束投影到投影平面上，从而将其投影到投影平面的光电检测器上。计数器从垂直同步信号的时间计数时间，并将其输出提供给与门。对应检测器根据记录时间在显示器上使亮点显示位置与照相装置上的投影位置相对应地多次显示。外部参数计算器从至少三组亮点显示位置及其对应的投影位置计算照相装置相对于显示器的亮点扫描表面的3-D平移和旋转。

3. 发明授权

US08426302B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08426302B2
公开(公告)日：2013-04-23
申请号：US13370532
申请日：2012-02-10
申请人： Daisuke Matsushita , Koichi Kato , Yuichiro Mitani
发明人： Daisuke Matsushita , Koichi Kato , Yuichiro Mitani
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L29/7926 , G11C16/0466 , H01L21/02164 , H01L21/02238 , H01L21/02312 , H01L21/28282 , H01L21/32105 , H01L27/11582 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： A method of manufacturing a semiconductor device according to an embodiment, includes: forming a stack structure by alternately stacking control gate electrodes and interlayer insulating films; forming a through-hole that penetrates through the stack structure in a stacking direction of the control gate electrodes and the interlayer insulating films; forming a first insulating film that covers an inner surface of the through-hole; forming a charge storage layer that covers an inner surface of the first insulating film; forming a second insulating film that covers an inner surface of the charge storage layer; forming a semiconductor layer that covers an inner surface of the second insulating film; and oxidizing an interface between the semiconductor layer and the second insulating film by performing a heat treatment in an atmosphere containing O2 gas at a temperature of 600° C. or lower.
摘要翻译：根据实施例的制造半导体器件的方法包括：通过交替堆叠控制栅电极和层间绝缘膜形成堆叠结构; 在所述控制栅电极和所述层间绝缘膜的堆叠方向上形成穿过所述堆叠结构的通孔; 形成覆盖所述通孔的内表面的第一绝缘膜; 形成覆盖所述第一绝缘膜的内表面的电荷存储层; 形成覆盖所述电荷存储层的内表面的第二绝缘膜; 形成覆盖所述第二绝缘膜的内表面的半导体层; 在600℃以下的温度下，在含有O 2气体的气氛中进行热处理，氧化半导体层与第二绝缘膜的界面。

4. 发明申请

US20120163550A1 X-RAY GENERATOR 有权
标题翻译： X射线发生器
公开(公告)号：US20120163550A1
公开(公告)日：2012-06-28
申请号：US13337940
申请日：2011-12-27
申请人： Tomohiro Chaki , Koichi Kato , Masahiro Nonoguchi , Masashi Kageyama , Masaru Kuribayashi
发明人： Tomohiro Chaki , Koichi Kato , Masahiro Nonoguchi , Masashi Kageyama , Masaru Kuribayashi
IPC分类号： H01J35/06
CPC分类号： H01J35/10 , H01J35/06 , H01J35/14 , H01J35/16 , H01J2235/06 , H01J2235/086 , H01J2235/166 , H01J2235/168
摘要： Provided is an X-ray generator for generating X-rays from an X-ray focal point that is a region in which electrons emitted from a filament impinge upon a rotating anode. The X-ray generator has a Wehnelt electrode for surrounding the filament, an attachment part formed integrally with the Wehnelt electrode, a pedestal to which the attachment part is attached, and a casing for housing the pedestal and the anticathode. The width of the space in which the anticathode is housed by the casing is less than the width of the space in which the pedestal is housed by the casing. The Wehnelt electrode extends into the space in which the anticathode is housed by the casing, in a state in which the attachment part is attached to the pedestal.
摘要翻译：提供一种用于从X射线焦点产生X射线的X射线发生器，X射线焦点是从灯丝发射的电子撞击在旋转阳极上的区域。 X射线发生器具有用于围绕灯丝的Wehnelt电极，与Wehnelt电极一体形成的安装部分，安装有附接部件的基座以及用于容纳基座和抗电极的壳体。由外壳容纳防蚁的空间的宽度小于由壳体容纳基座的空间的宽度。 Wehnelt电极在安装部分附接到基座的状态下延伸到由壳体容纳阴极的空间中。

5. 发明授权

US08064807B2 Developer supply system and image forming apparatus incorporating same 有权
标题翻译：显影剂供应系统和包含其的图像形成装置
公开(公告)号：US08064807B2
公开(公告)日：2011-11-22
申请号：US12425804
申请日：2009-04-17
申请人： Maiko Koeda , Koichi Kato , Emi Kita , Keiko Matsumoto , Takuzi Yoneda , Yuki Oshikawa , Kohichi Utsunomiya
发明人： Maiko Koeda , Koichi Kato , Emi Kita , Keiko Matsumoto , Takuzi Yoneda , Yuki Oshikawa , Kohichi Utsunomiya
IPC分类号： G03G15/08
CPC分类号： G03G15/0879 , G03G15/0855 , G03G15/0863 , G03G15/0865 , G03G15/0874 , G03G2215/0682 , G03G2215/0697
摘要： A developer supply system includes a container, a memory, and a positioning mechanism. The container has a deformable bag formed of flexible material to accommodate developer therein. The memory is attached to a given planar surface of the deformable bag to store information for communication to the image forming apparatus. The positioning mechanism holds the container therein while maintaining the given planar surface in position relative to the image forming apparatus when the deformable bag collapses as it discharges developer. An image forming apparatus employing such a developer supply system is also disclosed.
摘要翻译：显影剂供应系统包括容器，存储器和定位机构。容器具有由柔性材料形成的可变形袋，以容纳显影剂。存储器附接到可变形袋的给定平面表面以存储用于与图像形成装置通信的信息。当可变形袋在排出显影剂时，该定位机构将容器保持在其中，同时将给定的平面保持在相对于成像设备的适当位置。还公开了一种采用这种显影剂供应系统的图像形成装置。

6. 发明授权

US07962071B2 Developing device and image forming apparatus using same 有权
标题翻译：显影装置和使用它的成像装置
公开(公告)号：US07962071B2
公开(公告)日：2011-06-14
申请号：US12020172
申请日：2008-01-25
申请人： Kiyonori Tsuda , Koichi Kato , Yuki Oshikawa , Yasufumi Takahashi , Eriko Maruyama , Koichi Sakata , Hitoshi Ishibashi , Kentaroh Tomita , Mugijirou Uno , Keiko Matsumoto , Kohichi Utsunomiya
发明人： Kiyonori Tsuda , Koichi Kato , Yuki Oshikawa , Yasufumi Takahashi , Eriko Maruyama , Koichi Sakata , Hitoshi Ishibashi , Kentaroh Tomita , Mugijirou Uno , Keiko Matsumoto , Kohichi Utsunomiya
IPC分类号： G03G15/08
CPC分类号： G03G15/095 , G03G2215/0827 , G03G2215/0838
摘要： A developing device which can stably supply a developer to a latent image carrier by preventing the scattered developer from being discharged and thereby preventing the developer from being discharged despite that the amount of developer within the developing device does not increase, and an image forming apparatus using the developing device. A block member serving as a scattered developer discharge prevention member is provided so as to block a path through which the developer scattered as a result of a conveyance operation of a supply screw serving as a developer conveying member moves toward a developer discharge port. Accordingly, the scattered developer is prevented from reaching the developer discharge port and being discharged therefrom.
摘要翻译：一种显影装置，其能够通过防止散射的显影剂的排出而稳定地将显影剂供应到潜像载体，从而防止显影剂排出，尽管显影装置内的显影剂的量不增加;以及图像形成装置，其使用显影装置。设置用作散开的显影剂排出部件的块部件，以阻挡作为用作显影剂传送部件的供给螺杆的输送操作而散发的显影剂朝向显影剂排出口移动的路径。因此，防止散开的显影剂到达显影剂排出口并从中排出。

7. 发明申请

US20110003481A1 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20110003481A1
公开(公告)日：2011-01-06
申请号：US12801912
申请日：2010-07-01
申请人： Daisuke Matsushita , Koichi Muraoka , Koichi Kato , Yasushi Nakasaki , Yuichiro Mitani
发明人： Daisuke Matsushita , Koichi Muraoka , Koichi Kato , Yasushi Nakasaki , Yuichiro Mitani
IPC分类号： H01L21/314
CPC分类号： H01L27/11568 , C23C8/02 , C23C8/24 , C23C8/80 , H01L21/2652 , H01L21/28202 , H01L21/28238 , H01L21/28273 , H01L21/3144 , H01L21/3145 , H01L21/3185 , H01L27/115 , H01L27/11521 , H01L29/105 , H01L29/513
摘要： It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.
摘要翻译：可以抑制成膜时的缺陷的产生。一种制造半导体器件的方法，包括：将半导体衬底放置在大气中，从而在所述半导体衬底的表面上形成氮化物膜，所述气氛包含氮化所述半导体衬底的表面的第一氮化气体和第一稀释气体实际上不与半导体衬底反应，第一稀释气体的分压和第一氮化气体的分压与第一氮化气体的分压之和的比率为5以上，气氛为40乇或更低。

8. 发明授权

US07749919B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07749919B2
公开(公告)日：2010-07-06
申请号：US11896860
申请日：2007-09-06
申请人： Kiwamu Sakuma , Daisuke Matsushita , Koichi Kato , Yasushi Nakasaki , Izumi Hirano , Kouichi Muraoka , Yuichiro Mitani , Shigeto Fukatsu , Toshihide Ito
发明人： Kiwamu Sakuma , Daisuke Matsushita , Koichi Kato , Yasushi Nakasaki , Izumi Hirano , Kouichi Muraoka , Yuichiro Mitani , Shigeto Fukatsu , Toshihide Ito
IPC分类号： H01L21/321
CPC分类号： H01L21/28273
摘要： A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region; a charge storage film formed on the first insulating film; a second insulating film formed above the charge storage film and made of a high-permittivity material; a control gate electrode formed above the second insulating film; and a silicon nitride layer including nitrogen atoms having three-coordinate nitrogen bonds, at least one of second-nearest neighbor atoms of the nitrogen atoms being a nitrogen atom. At least one of the charge storage film and the control gate electrode contains silicon, the silicon nitride layer is located between the second insulating film and the at least one of the charge storage film and the control gate electrode.
摘要翻译：半导体器件包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在半导体衬底的一部分上的第一绝缘膜，该部分位于源区和漏区之间; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上方并由高介电常数材料制成的第二绝缘膜; 形成在所述第二绝缘膜上方的控制栅电极; 和包含具有三配位氮键的氮原子的氮化硅层，氮原子的第二最近邻原子中的至少一个为氮原子。电荷存储膜和控制栅电极中的至少一个包含硅，氮化硅层位于第二绝缘膜和电荷存储膜和控制栅电极中的至少一个之间。

9. 发明申请

US20090134388A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090134388A1
公开(公告)日：2009-05-28
申请号：US12203409
申请日：2008-09-03
申请人： Takashi YAMAUCHI , Yoshifumi Nishi , Yoshinori Tsuchiya , Junji Koga , Koichi Kato
发明人： Takashi YAMAUCHI , Yoshifumi Nishi , Yoshinori Tsuchiya , Junji Koga , Koichi Kato
IPC分类号： H01L29/08 , H01L21/06
CPC分类号： H01L21/26513 , H01L21/26506 , H01L21/823814 , H01L29/665 , H01L29/7833
摘要： A semiconductor device having a metal insulator semiconductor field effect transistor (MISFET) with interface resistance-reduced source/drain electrodes is disclosed. This device includes a p-type MISFET formed on a semiconductor substrate. The p-MISFET has a channel region in the substrate, a gate insulating film on the channel region, a gate electrode on the gate insulating film, and a pair of laterally spaced-apart source and drain electrodes on both sides of the channel region. These source/drain electrodes are each formed of a nickel (Ni)-containing silicide layer. The p-MISFET further includes an interface layer which is formed on the substrate side of an interface between the substrate and each source/drain electrode. This interface layer contains magnesium (Mg), calcium (Ca) or barium (Ba) therein. A fabrication method of the semiconductor device is also disclosed.
摘要翻译：公开了一种具有金属绝缘体半导体场效应晶体管（MISFET）的半导体器件，具有接口电阻降低的源/漏电极。该器件包括形成在半导体衬底上的p型MISFET。 p-MISFET在衬底中具有沟道区，沟道区上的栅极绝缘膜，栅极绝缘膜上的栅电极，以及沟道区两侧的一对侧向间隔开的源极和漏极。这些源极/漏极各自由含镍（Ni）的硅化物层形成。 p-MISFET还包括界面层，该界面层形成在基板和每个源极/漏极之间的界面的基板侧上。该界面层中含有镁（Mg），钙（Ca）或钡（Ba）。还公开了半导体器件的制造方法。

10. 发明申请

US20090087214A1 TONER SUPPLY DEVICE AND IMAGE FORMING APPARATUS 有权
标题翻译：调色剂供应装置和图像形成装置
公开(公告)号：US20090087214A1
公开(公告)日：2009-04-02
申请号：US12238815
申请日：2008-09-26
申请人： Kohichi Utsunomiya , Koichi Kato , Junichi Terai , Klyonori Tsuda , Emi Kita , Satoru Yoshida , Yuki Oshikawa
发明人： Kohichi Utsunomiya , Koichi Kato , Junichi Terai , Klyonori Tsuda , Emi Kita , Satoru Yoshida , Yuki Oshikawa
IPC分类号： G03G15/08
CPC分类号： G03G15/0886 , G03G15/0868 , G03G15/0877 , G03G2215/0692
摘要： A toner supply device includes a toner container, a transport-path forming member, an opening, a shutter member, and a first seal member. The opening is provided at a side wall of the transport-path forming member. The shutter member is movable between a closed position to close the transport path by being inserted in the opening and an open position. The first seal member fills a gap between an inner wall of the opening and the shutter member in a toner transport direction in which the toner is transported through the transport path. When the shutter member is inserted in the opening, the shutter member is elastically deformable in a deformation direction perpendicular to both the toner transport direction and a moving direction of the shutter member, and when the shutter member is not inserted in the opening, the shutter member is wider than the opening in the deformation direction.
摘要翻译：调色剂供给装置包括调色剂容器，传送路径形成构件，开口，活门构件和第一密封构件。开口设置在输送路径形成部件的侧壁。挡板构件可以在关闭位置之间移动，以通过插入开口和打开位置来关闭输送路径。第一密封构件在调色剂输送方向上填充开口的内壁和活门构件之间的间隙，其中调色剂通过输送路径输送。当活门构件插入开口中时，活门构件能够在垂直于调色剂输送方向和活门构件的移动方向的变形方向上弹性变形，并且当活门构件未插入开口时，活门构件比变形方向上的开口宽。

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