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1. 发明授权

US06370177B1 Semiconductor laser and method of manufacturing the same 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US06370177B1
公开(公告)日：2002-04-09
申请号：US09281613
申请日：1999-03-30
申请人： Koichi Genei , Makoto Okada
发明人： Koichi Genei , Makoto Okada
IPC分类号： H01S500
CPC分类号： H01S5/028 , Y10S438/913 , Y10S438/93
摘要： A semiconductor laser of present invention is constructed by an aluminum oxide (Al2O3) film on an end surface opposed to a beam emission surface of the semiconductor laser, a silicon nitride (SiNx, or Si3N4) film on the aluminum oxide film, and a silicon oxide (SiO2) film on the silicon nitride film. These films are made successively by a method of Electron Cyclotron Resonance (ECR) sputtering.
摘要翻译：本发明的半导体激光器由与氧化铝膜上的氮化硅（SiN x或Si 3 N 4）膜相对的端面上的氧化铝（Al 2 O 3）膜，和半导体激光氧化物（SiO 2）膜。这些膜是通过电子回旋共振（ECR）溅射法连续制成的。

2. 发明授权

US06667187B2 Semiconductor laser and method of manufacturing the same 有权
公开(公告)号：US06667187B2
公开(公告)日：2003-12-23
申请号：US10057057
申请日：2002-01-25
申请人： Koichi Genei , Makoto Okada
发明人： Koichi Genei , Makoto Okada
IPC分类号： H01L21316
CPC分类号： H01S5/028 , Y10S438/913 , Y10S438/93
摘要： A semiconductor laser of present invention is constructed by an aluminium oxide (Al2O3) film on an end surface opposed to a beam emission surface of the semiconductor laser, a silicon nitride (SiNx, or Si3N4) film on the aluminium oxide film, and a silicon oxide (SiO2) film on the silicon nitride film. These films are made successively by a method of Electron Cyclotron Resonance (ECR) sputtering.

3. 发明授权

US08417072B2 Light emitting device and optical transmission system 有权
标题翻译：发光装置和光传输系统
公开(公告)号：US08417072B2
公开(公告)日：2013-04-09
申请号：US13030433
申请日：2011-02-18
申请人： Koichi Genei , Kenji Fujimoto , Miwa Ishida
发明人： Koichi Genei , Kenji Fujimoto , Miwa Ishida
IPC分类号： G02B6/12
CPC分类号： H01L33/10
摘要： According to one embodiment, a light emitting device includes a substrate, a light emitting layer, a first conductivity type layer, a first and a second distributed Bragg reflector layer. The first conductivity type layer is provided between the substrate and the light emitting layer. The first reflector layer is provided between the first conductivity type layer and the substrate. First and second layers are alternately stacked therein. The second layers have refractive index different from that of the first layers. The first reflector layer has a center wavelength substantially same as emission wavelength of emission light. The second reflector layer is provided between the light emitting layer and the first reflector layer. Third and fourth layers are alternately stacked therein. The fourth layers have refractive index different from that of the third layers. The second reflector layer has a center wavelength longer than the center wavelength of the first reflector layer.
摘要翻译：根据一个实施例，发光器件包括衬底，发光层，第一导电类型层，第一和第二分布布拉格反射器层。第一导电类型层设置在基板和发光层之间。第一反射层设置在第一导电类型层和衬底之间。第一层和第二层交替堆叠在其中。第二层的折射率与第一层的折射率不同。第一反射器层具有与发射光的发射波长基本相同的中心波长。第二反射层设置在发光层与第一反射层之间。第三层和第四层交替堆叠在其中。第四层的折射率与第三层的折射率不同。第二反射层的中心波长比第一反射层的中心波长长。

4. 发明申请

US20120027341A1 LIGHT EMITTING DEVICE AND OPTICAL TRANSMISSION SYSTEM 有权
标题翻译：发光装置和光传输系统
公开(公告)号：US20120027341A1
公开(公告)日：2012-02-02
申请号：US13030433
申请日：2011-02-18
申请人： Koichi Genei , Kenji Fujimoto , Miwa Ishida
发明人： Koichi Genei , Kenji Fujimoto , Miwa Ishida
IPC分类号： G02B6/12 , H01L33/46
CPC分类号： H01L33/10
摘要： According to one embodiment, a light emitting device includes a substrate, a light emitting layer, a first conductivity type layer, a first and a second distributed Bragg reflector layer. The first conductivity type layer is provided between the substrate and the light emitting layer. The first reflector layer is provided between the first conductivity type layer and the substrate. First and second layers are alternately stacked therein. The second layers have refractive index different from that of the first layers. The first reflector layer has a center wavelength substantially same as emission wavelength of emission light. The second reflector layer is provided between the light emitting layer and the first reflector layer. Third and fourth layers are alternately stacked therein. The fourth layers have refractive index different from that of the third layers. The second reflector layer has a center wavelength longer than the center wavelength of the first reflector layer.
摘要翻译：根据一个实施例，发光器件包括衬底，发光层，第一导电类型层，第一和第二分布布拉格反射器层。第一导电类型层设置在基板和发光层之间。第一反射层设置在第一导电类型层和衬底之间。第一层和第二层交替堆叠在其中。第二层的折射率与第一层的折射率不同。第一反射器层具有与发射光的发射波长基本相同的中心波长。第二反射层设置在发光层与第一反射层之间。第三层和第四层交替堆叠在其中。第四层的折射率与第三层的折射率不同。第二反射层的中心波长比第一反射层的中心波长长。

5. 外观设计

USD485376S1 Light emitting device 失效
公开(公告)号：USD485376S1
公开(公告)日：2004-01-13
申请号：US29148028
申请日：2001-09-14
申请人： Seiji Iida , Naohiro Shimada , Kazuo Fukuoka , Koichi Genei , Satoshi Komoto
设计人： Seiji Iida , Naohiro Shimada , Kazuo Fukuoka , Koichi Genei , Satoshi Komoto

6. 外观设计

USD456534S1 Light emitting device 失效
公开(公告)号：USD456534S1
公开(公告)日：2002-04-30
申请号：US29148029
申请日：2001-09-14
申请人： Seiji Iida , Naohiro Shimada , Kazuo Fukuoka , Koichi Genei , Satoshi Komoto
设计人： Seiji Iida , Naohiro Shimada , Kazuo Fukuoka , Koichi Genei , Satoshi Komoto

7. 外观设计

USD454966S1 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：USD454966S1
公开(公告)日：2002-03-26
申请号：US29148026
申请日：2001-09-14
申请人： Seiji Iida , Naohiro Shimada , Kazuo Fukuoka , Koichi Genei , Satoshi Komoto
设计人： Seiji Iida , Naohiro Shimada , Kazuo Fukuoka , Koichi Genei , Satoshi Komoto

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