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    • 3. 发明申请
    • ANTI-HEBBIAN AND HEBBIAN COMPUTING WITH THERMODYNAMIC RAM
    • 抗HEBBAN和HEBBIAN计算与热力学RAM
    • US20150286926A1
    • 2015-10-08
    • US14674428
    • 2015-03-31
    • KnowmTech, LLC
    • Alex Nugent
    • G06N3/08G06N3/04
    • G06N3/049G06N3/063G06N99/005
    • A thermodynamic RAM circuit composed of a group of AHaH (Anti-Hebbian and Hebbian) computing circuits that form one or more kT-RAM circuits. The AHaH computing circuits can be configured as an AHaH computing stack. The kTRAM circuit(s) can include one or core kT-Cores, each partitioned into AHaH nodes of any size via time multiplexing. The kT-Core couples readout electrodes together to form a larger combined kT-Core. AHaH Computing is the theoretical space encompassing the capabilities of AHaH nodes. At this level of development, solutions have been found for problems as diverse as classification, prediction, anomaly detection, clustering, feature learning, actuation, combinatorial optimization, and universal logic.
    • 由一组形成一个或多个kT-RAM电路的AHaH(Anti-Hebbian和Hebbian)计算电路组成的热力学RAM电路。 AHaH计算电路可以配置为AHaH计算堆栈。 kTRAM电路可以包括一个或核心kT核心,每个核心kT核心经由时间复用被划分成任何大小的AHaH节点。 kT-Core将读出电极耦合在一起形成较大的组合kT-Core。 AHaH计算是包含AHaH节点能力的理论空间。 在这种发展水平上,已经发现了分类,预测,异常检测,聚类,特征学习,启动,组合优化和通用逻辑等问题的解决方案。
    • 9. 发明申请
    • ktRAM DESIGN
    • ktRAM设计
    • US20150074029A1
    • 2015-03-12
    • US14460668
    • 2014-08-15
    • KnowmTech, LLC
    • Alex NugentTimothy Molter
    • G06N3/08
    • G06N3/063
    • A ktRAM architecture comprising a memory wherein each input synapse or “bit” of the memory interacts on or with a common electrode through a common “dendritic” electrode, and wherein each input can be individually driven. Each input constitutes a memory cell driving a common electrode. One or more AHaH nodes can be provided wherein read out of data is accomplished via a common summing electrode through memristive components and wherein multiple input cells are simultaneously active.
    • 包括存储器的ktRAM架构,其中存储器的每个输入突触或“位”通过公共“树枝状”电极在公共电极上或与公共电极相互作用,并且其中每个输入可被单独驱动。 每个输入构成驱动公共电极的存储单元。 可以提供一个或多个AHaH节点,其中通过共振求和电极通过忆阻元件实现数据读出,并且其中多个输入单元同时有效。