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    • 2. 发明授权
    • Method for producing ceramic passivation layers on silicon for solar cell manufacture
    • 太阳能电池制造用硅制造陶瓷钝化层的方法
    • US08482106B2
    • 2013-07-09
    • US13060324
    • 2009-08-26
    • Klaus RodeHartmut Wiezer
    • Klaus RodeHartmut Wiezer
    • H01L23/58
    • H01L21/3125C23C18/1208C23C18/1245H01L21/02126H01L21/02222H01L21/02282H01L21/02318H01L31/1868Y02E10/50Y02P70/521
    • The invention relates to a method for producing passivation layers on crystalline silicon by a) coating the silicon with a solution containing at least one polysilazane of the general formula (1): —(SiR′R″—NR′″)-n, wherein R′, R″, R′″ are the same or different and stand independently of each other for hydrogen or a possibly substituted alkyl, aryl, vinyl, or (trialkoxysilyl)alkyl group, wherein n is an integer and n is chosen such that the polysilazane has a number average molecular weight of 150 to 150,000 g/mol, b) subsequently removing the solvent by evaporation, whereby polysilazane layers of 50-500 nm thickness remain on the silicon wafer, and c) heating the polysilazane layer at normal pressure to 200-1000° C. in the presence of air or nitrogen, wherein upon tempering the ceramic layers release hydrogen for bulk passivation of the silicon.
    • 本发明涉及一种用于在晶体硅上制备钝化层的方法,其方法是:a)用含有至少一种通式(1)的聚硅氮烷的溶液涂覆硅: - (SiR'R“-NR”') - n 其中R',R“,R”'相同或不同并且彼此独立地表示氢或可能被取代的烷基,芳基,乙烯基或(三烷氧基甲硅烷基)烷基,其中n是整数,n 选择为聚硅氮烷的数均分子量为150〜150,000g / mol,b)随后通过蒸发除去溶剂,由此在硅晶片上残留50-500nm厚度的聚硅氮烷层,以及c)加热聚硅氮烷 层,在空气或氮气存在下在常压至200-1000℃,其中在回火后,陶瓷层释放氢以便硅的体积钝化。
    • 3. 发明申请
    • Method For Producing Ceramic Passivation Layers on Silicon For Solar Cell Manufacture
    • 硅太阳能电池制造中陶瓷钝化层的制备方法
    • US20110156221A1
    • 2011-06-30
    • US13060324
    • 2009-08-26
    • Klaus RodeHartmut Wiezer
    • Klaus RodeHartmut Wiezer
    • H01L23/58H01L21/30
    • H01L21/3125C23C18/1208C23C18/1245H01L21/02126H01L21/02222H01L21/02282H01L21/02318H01L31/1868Y02E10/50Y02P70/521
    • The invention relates to a method for producing passivation layers on crystalline silicon by a) coating the silicon with a solution containing at least one polysilazane of the general formula (1): —(SiR′R″—NR′″)-n, wherein R′, R″, R′″ are the same or different and stand independently of each other for hydrogen or a possibly substituted alkyl, aryl, vinyl, or (trialkoxysilyl)alkyl group, wherein n is an integer and n is chosen such that the polysilazane has a number average molecular weight of 150 to 150,000 g/mol, b) subsequently removing the solvent by evaporation, whereby polysilazane layers of 50-500 nm thickness remain on the silicon wafer, and c) heating the polysilazane layer at normal pressure to 200-1000° C. in the presence of air or nitrogen, wherein upon tempering the ceramic layers release hydrogen for bulk passivation of the silicon.
    • 本发明涉及一种在晶体硅上制备钝化层的方法,其方法是:a)用含有至少一种通式(1)的聚硅氮烷:(SiR'R“-NR'”) - n的溶液涂覆硅,其中 芳基,乙烯基或(三烷氧基甲硅烷基)烷基中,R',R“,R”“相同或不同并且彼此独立地表示氢或可能被取代的烷基,芳基,乙烯基或(三烷氧基甲硅烷基)烷基,其中n是整数, 聚硅氮烷的数均分子量为150〜150,000g / mol,b)随后通过蒸发除去溶剂,由此在硅晶片上残留50-500nm厚度的聚硅氮烷层,以及c)在常压下加热聚硅氮烷层 在空气或氮气存在下为200-1000℃,其中在回火后,陶瓷层释放氢以进行硅的体积钝化。