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    • 4. 发明申请
    • BATTERY STATE MONITORING CIRCUIT AND BATTERY DEVICE
    • 电池状态监测电路和电池装置
    • US20100194343A1
    • 2010-08-05
    • US12699593
    • 2010-02-03
    • Kazuaki SanoWataru SakamotoToshiyuki KoikeMuneharu Kawana
    • Kazuaki SanoWataru SakamotoToshiyuki KoikeMuneharu Kawana
    • H02J7/00
    • H02J7/0016H02J7/0021H02J7/0026
    • Provided are a battery state monitoring circuit and a battery device which are capable of inhibiting discharge without enabling an overdischarge cell balance function when an overcurrent detection circuit detects a discharge overcurrent, without the need for an additional terminal of the battery state monitoring circuit. A detection signal of the overcurrent detection circuit is input to each of a communication terminal for overdischarge signal and a communication terminal for overcharge signal included in the battery state monitoring circuit provided on a side of the overcurrent detection circuit. An overdischarge cell balance circuit outputs a cell balance signal when an overdischarge detection signal indicates an overdischarge non-detected state, an overdischarge signal indicates an overdischarge detected state, and an overcharge signal indicates an overcharge non-detected state.
    • 提供一种电池状态监视电路和电池装置,其能够在过电流检测电路检测到放电过电流时能够抑制放电,而不需要过放电电池平衡功能,而不需要电池状态监视电路的附加端子。 过电流检测电路的检测信号输入到过放电信号的通信端子和设置在过电流检测电路一侧的电池状态监视电路中的过充电信号的通信端子。 当过放电检测信号表示过放电未检测状态,过放电信号表示过放电检测状态,过充电单元平衡电路输出单元平衡信号,过充电信号表示过充电未检测状态。
    • 5. 发明授权
    • Battery state monitoring circuit and battery device
    • 电池状态监测电路和电池装置
    • US08138719B2
    • 2012-03-20
    • US12699593
    • 2010-02-03
    • Kazuaki SanoWataru SakamotoToshiyuki KoikeMuneharu Kawana
    • Kazuaki SanoWataru SakamotoToshiyuki KoikeMuneharu Kawana
    • H02J7/00
    • H02J7/0016H02J7/0021H02J7/0026
    • Provided are a battery state monitoring circuit and a battery device which are capable of inhibiting discharge without enabling an overdischarge cell balance function when an overcurrent detection circuit detects a discharge overcurrent, without the need for an additional terminal of the battery state monitoring circuit. A detection signal of the overcurrent detection circuit is input to each of a communication terminal for overdischarge signal and a communication terminal for overcharge signal included in the battery state monitoring circuit provided on a side of the overcurrent detection circuit. An overdischarge cell balance circuit outputs a cell balance signal when an overdischarge detection signal indicates an overdischarge non-detected state, an overdischarge signal indicates an overdischarge detected state, and an overcharge signal indicates an overcharge non-detected state.
    • 提供一种电池状态监视电路和电池装置,其能够在过电流检测电路检测到放电过电流时能够抑制放电,而不需要过放电电池平衡功能,而不需要电池状态监视电路的附加端子。 过电流检测电路的检测信号输入到过放电信号的通信端子和设置在过电流检测电路一侧的电池状态监视电路中的过充电信号的通信端子。 当过放电检测信号表示过放电未检测状态,过放电信号表示过放电检测状态,过充电单元平衡电路输出单元平衡信号,过充电信号表示过充电未检测状态。
    • 9. 发明授权
    • Nonvolatile semiconductor memory device and method for manufacturing same
    • 非易失性半导体存储器件及其制造方法
    • US08598649B2
    • 2013-12-03
    • US12792378
    • 2010-06-02
    • Takayuki OkamuraNoboru OoikeWataru SakamotoTakashi Izumida
    • Takayuki OkamuraNoboru OoikeWataru SakamotoTakashi Izumida
    • H01L29/792H01L21/3205H01L21/4763
    • H01L27/11565H01L21/28282H01L27/11568
    • A nonvolatile semiconductor memory device according to embodiment includes: a semiconductor substrate having an upper portion being partitioned into a plurality of semiconductor portions extending in a first direction; a charge storage film provided on the semiconductor portion; a word-line electrode provided on the semiconductor substrate and extending in a second direction intersecting with the first direction; and a pair of selection gate electrodes provided on both sides of the word-line electrode in the first direction on the semiconductor substrate and extending in the second direction, a shortest distance between a corner portion of each of the semiconductor portions and each of the selection gate electrodes being longer than a shortest distance between the corner portion of the semiconductor portion and the word-line electrode in a cross section parallel to the second direction.
    • 根据实施例的非易失性半导体存储器件包括:半导体衬底,其具有被分隔成沿第一方向延伸的多个半导体部分的上部; 设置在半导体部分上的电荷存储膜; 字线电极,其设置在所述半导体基板上并沿与所述第一方向交叉的第二方向延伸; 以及一对选择栅电极,其设置在所述半导体基板上的所述字线电极的所述第一方向的两侧,并且沿所述第二方向延伸,所述半导体部分的每个的角部与所述选择中的每一个之间的最短距离 栅电极比与半导体部分的角部和字线电极之间的平行于第二方向的截面中的最短距离更长。