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    • 3. 发明申请
    • Vapor phase growth apparatus
    • 气相生长装置
    • US20070163504A1
    • 2007-07-19
    • US10589348
    • 2005-02-15
    • Eiichi ShimizuNobuhito MakinoManabu Kawabe
    • Eiichi ShimizuNobuhito MakinoManabu Kawabe
    • C23C16/00
    • C30B25/10C23C16/4583
    • It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer holder) installed within the reactor and having a wafer mounting portion (pocket hole) on a surface thereof for holding a wafer, a gas supply member (gas inlet pipe) for supplying raw material gas towards the wafer, a heating member (heater) for heating the wafer, and a heat uniformizing member (susceptor) for holding the wafer containing member and uniformizing heat from the heating member, wherein raw material gas is supplied into the reactor in a high temperature environment while heating the wafer by using the heating member via the heat uniformizing member and the wafer containing member, to form a film grown on a surface of the wafer, and wherein a recess portion depressed in a dome shape is formed at a back side of the wafer containing member.
    • 本发明提供一种气相生长装置,其能够在整个晶片的表面上实现均匀性均匀的薄膜的气相生长。 气相生长装置至少包括可密封的反应器,安装在反应器内的晶片容纳构件(晶片保持器),并且在其表面上具有用于保持晶片的晶片安装部分(凹穴),气体供给构件 用于向晶片供应原料气体的加热构件(加热器),用于保持晶片容纳构件的热均匀化构件(基座),并且来自加热构件的均匀化热量,其中提供原料气体 在高温环境下进入反应器,同时通过使用加热构件经由热均匀化构件和晶片容纳构件加热晶片,以形成在晶片的表面上生长的膜,并且其中凹陷的圆顶形状的凹部 形成在晶片容纳构件的背面。
    • 9. 发明授权
    • Vapor phase growth apparatus
    • 气相生长装置
    • US07670434B2
    • 2010-03-02
    • US10589348
    • 2005-02-15
    • Eiichi ShimizuNobuhito MakinoManabu Kawabe
    • Eiichi ShimizuNobuhito MakinoManabu Kawabe
    • H01L21/00C23C14/00C23C16/00
    • C30B25/10C23C16/4583
    • It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer holder) installed within the reactor and having a wafer mounting portion (pocket hole) on a surface thereof for holding a wafer, a gas supply member (gas inlet pipe) for supplying raw material gas towards the wafer, a heating member (heater) for heating the wafer, and a heat uniformizing member (susceptor) for holding the wafer containing member and uniformizing heat from the heating member, wherein raw material gas is supplied into the reactor in a high temperature environment while heating the wafer by using the heating member via the heat uniformizing member and the wafer containing member, to form a film grown on a surface of the wafer, and wherein a recess portion depressed in a dome shape is formed at a back side of the wafer containing member.
    • 本发明提供一种气相生长装置,其能够在整个晶片的表面上实现均匀性均匀的薄膜的气相生长。 气相生长装置至少包括可密封的反应器,安装在反应器内的晶片容纳构件(晶片保持器),并且在其表面上具有用于保持晶片的晶片安装部分(凹穴),气体供给构件 用于向晶片供应原料气体的加热构件(加热器),用于保持晶片容纳构件的热均匀化构件(基座),并且来自加热构件的均匀化热量,其中提供原料气体 在高温环境下进入反应器,同时通过使用加热构件经由热均匀化构件和晶片容纳构件加热晶片,以形成在晶片的表面上生长的膜,并且其中凹陷的圆顶形状的凹部 形成在晶片容纳构件的背面。