专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07790565B2 Semiconductor on glass insulator made using improved thinning process 失效
标题翻译：使用改进的薄化工艺制成的玻璃绝缘体上的半导体
公开(公告)号：US07790565B2
公开(公告)日：2010-09-07
申请号：US11729895
申请日：2007-03-29
申请人： Kishor Purushottam Gadkaree , Michael John Moore , Mark Andrew Stocker , Jiangwei Feng , Joseph Frank Mach
发明人： Kishor Purushottam Gadkaree , Michael John Moore , Mark Andrew Stocker , Jiangwei Feng , Joseph Frank Mach
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L21/30604 , H01L21/30608
摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.
摘要翻译：用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主半导体晶片的注入表面进行离子注入工艺以在施主半导体晶片中产生剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露至少一个切割表面; 以及对所述至少一个切割表面进行湿式蚀刻工艺。

2. 发明申请

US20070249139A1 Semiconductor on glass insulator made using improved thinning process 失效
标题翻译：使用改进的薄化工艺制成的玻璃绝缘体上的半导体
公开(公告)号：US20070249139A1
公开(公告)日：2007-10-25
申请号：US11729895
申请日：2007-03-29
申请人： Kishor Purushottam Gadkaree , Michael John Moore , Mark Andrew Stocker , Jiangwei Feng , Joseph Frank Mach
发明人： Kishor Purushottam Gadkaree , Michael John Moore , Mark Andrew Stocker , Jiangwei Feng , Joseph Frank Mach
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/30604 , H01L21/30608
摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.
摘要翻译：用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主半导体晶片的注入表面进行离子注入工艺以在施主半导体晶片中产生剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露至少一个切割表面; 以及对所述至少一个切割表面进行湿式蚀刻工艺。

3. 发明申请

US20090061593A1 Semiconductor Wafer Re-Use in an Exfoliation Process Using Heat Treatment 审中-公开
标题翻译：半导体晶片在使用热处理的剥离工艺中再利用
公开(公告)号：US20090061593A1
公开(公告)日：2009-03-05
申请号：US12170797
申请日：2008-07-10
申请人： Kishor Purushottam Gadkaree , Mark Andrew Stocker
发明人： Kishor Purushottam Gadkaree , Mark Andrew Stocker
IPC分类号： H01L21/30 , B32B17/06
CPC分类号： H01L21/76254
摘要： Methods and apparatus for re-using a semiconductor donor wafer in a semiconductor-on-insulator (SOI) fabrication process provide for: (a) subjecting a first implantation surface of a donor semiconductor wafer to an ion implantation process to create a first exfoliation layer of the donor semiconductor wafer; (b) bonding the first implantation surface of the first exfoliation layer to a first insulator substrate; (c) separating the first exfoliation layer from the donor semiconductor wafer, thereby exposing a first cleaved surface of the donor semiconductor wafer, the first cleaved surface having a first damage thickness; and (d) subjecting the first cleaved surface of the donor semiconductor wafer to one or more elevated temperatures over time to reduce the first damage thickness to a sufficient level to produce a second implantation surface.
摘要翻译：在半导体绝缘体（SOI）制造工艺中重新使用半导体施主晶片的方法和装置提供：（a）使施主半导体晶片的第一注入表面经受离子注入工艺以产生第一剥离层的供体半导体晶片; （b）将第一剥离层的第一注入表面接合到第一绝缘体基板; （c）将第一剥离层与施主半导体晶片分离，从而暴露施主半导体晶片的第一切割表面，第一裂解表面具有第一损伤厚度; 和（d）使供体半导体晶片的第一切割表面经历一个或多个升高的温度随时间而将第一损伤厚度减小到足够的水平以产生第二注入表面。

4. 发明授权

US09257328B2 Glass-ceramic-based semiconductor-on-insulator structures and method for making the same 有权
标题翻译：玻璃陶瓷绝缘体上半导体结构及其制造方法
公开(公告)号：US09257328B2
公开(公告)日：2016-02-09
申请号：US12324576
申请日：2008-11-26
申请人： Christopher Paul Daigler , Kishor Purushottam Gadkaree , Joseph Frank Mach , Steven Alvin Tietje
发明人： Christopher Paul Daigler , Kishor Purushottam Gadkaree , Joseph Frank Mach , Steven Alvin Tietje
IPC分类号： H01L27/12 , H01L21/762 , H01L29/786
CPC分类号： H01L21/76254 , H01L29/78603
摘要： Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer to thereby form an intermediate semiconductor on precursor glass structure; sandwiching the intermediate semiconductor on precursor glass structure between first and second support structures; applying pressure to one or both of the first and second support structures; and subjecting the intermediate semiconductor on precursor glass structure to heat-treatment step to crystallize the precursor glass resulting in the formation of a semiconductor on glass-ceramic structure.
摘要翻译：用于在玻璃 - 陶瓷结构上形成半导体的方法和装置提供：使施主半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到前体玻璃基板上; 将剥离层与施主半导体晶片分离，从而在前体玻璃结构上形成中间半导体; 将中间半导体夹在第一和第二支撑结构之间的前体玻璃结构上; 向第一和第二支撑结构中的一个或两个施加压力; 并且将前体玻璃结构上的中间半导体进行热处理步骤以使前体玻璃结晶，从而在玻璃 - 陶瓷结构上形成半导体。

5. 发明申请

US20120115717A1 FLOW-THROUGH SORBENT COMPRISING A METAL SULFIDE 审中-公开
标题翻译：包含金属硫化物的流通通道
公开(公告)号：US20120115717A1
公开(公告)日：2012-05-10
申请号：US13349804
申请日：2012-01-13
申请人： Kishor Purushottam Gadkaree , Anbo Liu , Joseph Frank Mach
发明人： Kishor Purushottam Gadkaree , Anbo Liu , Joseph Frank Mach
IPC分类号： B01J20/30
CPC分类号： C04B35/6365 , B01D53/02 , B01D53/64 , B01D2251/60 , B01D2253/10 , B01D2253/1128 , B01D2257/60 , B01D2257/602 , B01J20/0218 , B01J20/0222 , B01J20/0225 , B01J20/0237 , B01J20/0285 , B01J20/2803 , B01J20/28042 , B01J20/28045 , B01J20/30 , B01J20/3042 , C04B35/547 , C04B35/632 , C04B35/63476 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3281 , C04B2235/3289 , C04B2235/349 , C04B2235/442 , C04B2235/446 , C04B2235/447 , C04B2235/448 , C04B2235/6021 , Y10T428/24149
摘要： A flow-through sorbent comprising at least 30 wt % of a metal sulfide, and a binder. The sorbent may be used, for example, for the removal of a contaminant, such as mercury, from a fluid stream.
摘要翻译：包含至少30重量％的金属硫化物的流通吸附剂和粘合剂。吸附剂可用于例如从流体流中除去污染物，例如汞。

6. 发明授权

US07553349B2 Composite coatings for thin-walled ceramic honeycomb structures 有权
标题翻译：薄壁陶瓷蜂窝结构复合涂层
公开(公告)号：US07553349B2
公开(公告)日：2009-06-30
申请号：US11213179
申请日：2005-08-26
申请人： Kishor Purushottam Gadkaree , Susan Clair Lauderdale , Joseph Frank Mach , Deborah Lynn Shanley
发明人： Kishor Purushottam Gadkaree , Susan Clair Lauderdale , Joseph Frank Mach , Deborah Lynn Shanley
IPC分类号： B01D46/00 , B01D39/20 , F01N3/022
CPC分类号： B01D39/2068 , C04B41/009 , C04B41/5089 , C04B41/85 , C04B2111/0081 , Y10S55/05 , Y10S55/10 , Y10S55/30 , C04B41/5059 , C04B41/5024 , C04B35/00 , C04B35/195 , C04B38/0006
摘要： A ceramic honeycomb product comprising a thin-walled ceramic honeycomb structure incorporating a plurality of parallel channels bounded by thin channel walls traversing the body from a first end face to a second end face thereof; and a composite coating disposed on at least one end face of the structure comprising a powder of an abrasion-resistant ceramic dispersed in a dried siliceous matrix.
摘要翻译：一种陶瓷蜂窝产品，其包括：薄壁陶瓷蜂窝结构，其包括多个平行通道，所述多个平行通道由从所述主体的第一端面到其第二端面穿过的薄的通道壁限定; 以及复合涂层，其设置在所述结构的至少一个端面上，包括分散在干燥硅质基质中的耐磨陶瓷粉末。

7. 发明授权

US08784764B2 Methods for forming activated carbon material for high energy density ultracapacitors 有权
标题翻译：用于形成高能量密度超级电容器的活性炭材料的方法
公开(公告)号：US08784764B2
公开(公告)日：2014-07-22
申请号：US12335078
申请日：2008-12-15
申请人： Kishor Purushottam Gadkaree , Joseph Frank Mach
发明人： Kishor Purushottam Gadkaree , Joseph Frank Mach
IPC分类号： B01J21/18 , C01B31/08 , H01M4/88 , C01B31/00 , H01M4/13 , H01M4/133 , C01B31/12 , H01M4/583 , H01M4/00 , H01M4/86 , H01M4/02
CPC分类号： H01M4/133 , C01B32/30 , C01B32/348 , H01G11/34 , H01G11/44 , H01M4/00 , H01M4/02 , H01M4/583 , H01M4/86 , H01M4/88 , Y02E60/13
摘要： A method for producing an activated carbon material includes forming an aqueous mixture of a natural, non-lignocellulosic carbon precursor and an inorganic compound, heating the mixture in an inert or reducing atmosphere, cooling the heated mixture to form a first carbon material, and removing the inorganic compound to produce an activated carbon material. The activated carbon material is suitable to form improved carbon-based electrodes for use in high energy density devices.
摘要翻译：一种生产活性炭材料的方法包括形成天然，非木质纤维素碳前体和无机化合物的水性混合物，在惰性或还原气氛中加热混合物，冷却加热的混合物以形成第一碳材料，并除去该无机化合物生产活性炭材料。活性炭材料适用于形成用于高能量密度装置的改进的碳基电极。

8. 发明申请

US20090109599A1 High energy density ultracapacitor 有权
标题翻译：高能量密度超级电容器
公开(公告)号：US20090109599A1
公开(公告)日：2009-04-30
申请号：US11980883
申请日：2007-10-31
申请人： Kishor Purushottam Gadkaree , Joseph Frank Mach
发明人： Kishor Purushottam Gadkaree , Joseph Frank Mach
IPC分类号： H01G9/00 , C01B31/00
CPC分类号： H01G11/34 , H01G11/32 , H01G11/44 , H01G11/86 , Y02E60/13 , Y10T29/417 , Y10T29/53204
摘要： The invention is directed to a carbon composition produced from a carbon precursor, a carbon precursor modifier, and an additive, wherein a mixture of the recited components is formed, the carbon precursor is cured, the resulting mixture carbonized to produce a porous carbon composition. Also disclosed are methods for preparing the carbon composition and for using the carbon composition to fabricate electrodes and electric double layer capacitors comprising the carbon composition.
摘要翻译：本发明涉及由碳前体，碳前体改性剂和添加剂制备的碳组合物，其中形成所述组分的混合物，碳前体被固化，所得混合物被碳化以产生多孔碳组合物。还公开了制备碳组合物和使用碳组合物来制造包含碳组合物的电极和双电层电容器的方法。

9. 发明申请

US20090023271A1 Glass-based SOI structures 审中-公开
标题翻译：基于玻璃的SOI结构
公开(公告)号：US20090023271A1
公开(公告)日：2009-01-22
申请号：US12214857
申请日：2008-06-23
申请人： James Gregory Couillard , Kishor Purushottam Gadkaree , Joseph Frank Mach
发明人： James Gregory Couillard , Kishor Purushottam Gadkaree , Joseph Frank Mach
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/2007
摘要： A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate.
摘要翻译：在玻璃结构上形成半导体的方法包括：在半导体晶片上建立剥离层; 使半导体晶片的剥离层与玻璃基板接触; 在没有真空气氛的情况下向半导体晶片和玻璃基板施加压力，温度和电压，使得通过电解在其间建立结合; 并且施加应力使得剥离层与半导体晶片分离并保持结合到玻璃基板。

10. 发明授权

US07399681B2 Glass-based SOI structures 有权
标题翻译：基于玻璃的SOI结构
公开(公告)号：US07399681B2
公开(公告)日：2008-07-15
申请号：US11150392
申请日：2005-06-10
申请人： James Gregory Couillard , Kishor Purushottam Gadkaree , Joseph Frank Mach
发明人： James Gregory Couillard , Kishor Purushottam Gadkaree , Joseph Frank Mach
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/2007
摘要： A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate.
摘要翻译：在玻璃结构上形成半导体的方法包括：在半导体晶片上建立剥离层; 使半导体晶片的剥离层与玻璃基板接触; 在没有真空气氛的情况下向半导体晶片和玻璃基板施加压力，温度和电压，使得通过电解在其间建立结合; 并且施加应力使得剥离层与半导体晶片分离并保持结合到玻璃基板。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式