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    • 3. 发明申请
    • USE OF ERROR CORRECTION POINTERS TO HANDLE ERRORS IN MEMORY
    • 使用错误修正指针来处理存储器中的错误
    • US20150089310A1
    • 2015-03-26
    • US14129070
    • 2013-09-24
    • Ravi H. MotwaniKiran Pangal
    • Ravi H. MotwaniKiran Pangal
    • G06F11/10G06F11/07
    • G06F11/073G06F11/076G06F11/0772G06F11/1048
    • Methods, apparatuses, and systems related to use of error correction pointers (ECPs) to handle hard errors in memory are described herein. In embodiments, a read module of a memory controller may read a codeword stored in a memory. The read module may determine a number of hard errors in the codeword. Responsive to a determination that the number of hard errors exceeds a threshold, the read module may store ECP information associated with the hard errors. The read module may include an error correction code (ECC) module to perform an ECC process on the codeword. The read module may use the ECP information to decode the codeword to recover the data responsive to a determination that the ECC process failed. Other embodiments may be described and claimed.
    • 这里描述了使用纠错指针(ECP)来处理存储器中的硬错误的方法,装置和系统。 在实施例中,存储器控制器的读取模块可以读取存储在存储器中的代码字。 读取模块可以确定码字中的许多硬错误。 响应于确定硬错误的数量超过阈值,读取模块可以存储与硬错误相关联的ECP信息。 读取模块可以包括用于对码字执行ECC处理的纠错码(ECC)模块。 读取模块可以使用ECP信息来解码码字以响应于ECC过程失败的确定来恢复数据。 可以描述和要求保护其他实施例。
    • 5. 发明申请
    • MEMORY CONTROLLER WITH DISTRIBUTION TRANSFORMER
    • 带分配变压器的内存控制器
    • US20150135036A1
    • 2015-05-14
    • US14129066
    • 2013-09-25
    • Ravi H. MotwaniKiran Pangal
    • Ravi H. MotwaniKiran Pangal
    • G06F11/10
    • G06F11/1076G06F11/1012G06F13/16G06F13/1694G11C7/1006G11C13/0004G11C13/0069
    • Methods, apparatuses, and systems are described related to memory controllers for memory. In one embodiment, a memory controller may include a distribution transformer configured to receive data to be stored into a memory, wherein the data has a distribution of m1:n1 ratio for bits having a first logic value and bits having a second logic value, where m1 and n1 are real numbers. The distribution transformer may transform the data into skewed data, wherein the skewed data has a distribution of m2:n2 ratio for bits having the first logic value and bits having the second logic value, where m2 and n2 are real numbers that are different from one another and respectively differ from m1 and n1. The distribution transformer may output the skewed data for storage in the memory. Other embodiments may be described and claimed.
    • 描述与存储器的存储器控​​制器相关的方法,装置和系统。 在一个实施例中,存储器控制器可以包括被配置为接收要存储到存储器中的数据的分配变压器,其中所述数据具有用于具有第一逻辑值的位和具有第二逻辑值的位的m1:n1比率分布,其中 m1和n1是实数。 分配变压器可以将数据变换为偏斜数据,其中偏斜数据具有具有第一逻辑值的位和具有第二逻辑值的位的m2:n2比的分布,其中m2和n2是不同于一个的实数 另一个,分别不同于m1和n1。 配电变压器可以输出偏斜数据以存储在存储器中。 可以描述和要求保护其他实施例。
    • 8. 发明授权
    • Reconstructing codewords using a side channel
    • 使用侧面信道重建码字
    • US09043681B2
    • 2015-05-26
    • US13996151
    • 2012-03-28
    • Pranav KalavadeRavi H. Motwani
    • Pranav KalavadeRavi H. Motwani
    • H03M13/00G06F11/14H03M13/11H03M13/29G06F11/10
    • G06F11/1412G06F11/1044G06F11/1402H03M13/1102H03M13/2906H03M13/2927
    • Embodiments of the present disclosure describe device, methods, computer-readable media and system configurations for decoding codewords using a side channel. In various embodiments, a memory controller may be configured to determine that m of n die of non-volatile memory (“NVM”) have failed iterative decoding. In various embodiments, the memory controller may be further configured to generate a side channel from n-m non-failed die and the m failed die other than a first failed die. In various embodiments, the memory controller may be further configured to reconstruct, using iterative decoding, a codeword stored on the first failed die of the m failed die based on the generated side channel and on soft input to an attempt to iteratively decode data stored on the first failed die. In various embodiments, the iterative decoding may include low-density parity-check decoding. Other embodiments may be described and/or claimed.
    • 本公开的实施例描述了使用侧信道对码字进行解码的设备,方法,计算机可读介质和系统配置。 在各种实施例中,存储器控制器可以被配置为确定非易失性存储器(“NVM”)的n个管芯的m具有失败的迭代解码。 在各种实施例中,存储器控制器还可以被配置为从n-m非故障芯片和除了第一故障芯片之外的m个故障模具产生侧通道。 在各种实施例中,存储器控制器还可以被配置为基于生成的侧信道和软输入来重建使用迭代解码存储在m个失败管芯的第一个故障管芯上的代码字,以尝试迭代地解码存储在 第一个失败的死亡 在各种实施例中,迭代解码可以包括低密度奇偶校验解码。 可以描述和/或要求保护其他实施例。