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1. 发明授权

US12119076B2 Semiconductor integrated circuit 有权
公开(公告)号：US12119076B2
公开(公告)日：2024-10-15
申请号：US17679924
申请日：2022-02-24
申请人： KIOXIA CORPORATION
发明人： Takayuki Miyazaki , Yuki Ishizaki
IPC分类号： G11C7/06 , G11C7/10 , G11C7/12
CPC分类号： G11C7/065 , G11C7/1006 , G11C7/1057 , G11C7/106 , G11C7/12
摘要： A semiconductor integrated circuit includes a plurality of sense amplifier units including a first group of sense amplifier units and a second group of sense amplifier units, a first data bus, a second data bus, a transfer circuit between the first data bus and the second data bus, and a data latch connected to the second data bus and to the first data bus through the transfer circuit and the second data bus. Each sense amplifier unit is connected to one of the bit lines. The first data bus is connected to each of the sense amplifier units in the first group. The second data bus is connected to each of the sense amplifier units in the second group. The transfer circuit controls the transfer of data between the first data bus and the second data bus in both directions.

2. 发明授权

US11328770B2 Semiconductor storage device 有权
公开(公告)号：US11328770B2
公开(公告)日：2022-05-10
申请号：US17122063
申请日：2020-12-15
申请人： Kioxia Corporation
发明人： Takayuki Miyazaki
IPC分类号： G11C11/00 , G11C13/00
摘要： A memory includes first-lines, second-lines, and memory cells. Third-lines are provided to respectively correspond to groups each comprising m (m≥2) lines of the first-lines. A first selector selects a certain one of the first-lines from the groups and to connect the selected first-lines to the third-lines corresponding to the groups. Fourth-lines correspond to the third-lines. A second selector selects one of the third-lines and to connect the fourth-line to the selected third-line. A third selector selects a certain one of the second-lines. A first driver applied a voltage to the fourth-line. A second driver is connected to the third selector. The first driver charges the third-line corresponding to the first-line selected from the groups via the fourth-line. The first and second selectors bring the selected first-line and the third-line corresponding the first-line to an electrically floating state. The second driver applies a voltage to the selected second-line.

3. 发明授权

US11715527B2 Semiconductor storage device having first and second memory strings formed on opposite sides of the same pillar and method of performing a read operation therein 有权
公开(公告)号：US11715527B2
公开(公告)日：2023-08-01
申请号：US17458059
申请日：2021-08-26
申请人： KIOXIA CORPORATION
发明人： Kazutaka Ikegami , Hidehiro Shiga , Takashi Maeda , Rieko Funatsuki , Takayuki Miyazaki
IPC分类号： G11C16/04 , G11C16/26 , G11C16/08 , G11C16/30 , G11C16/20 , H10B41/27 , H10B43/27
CPC分类号： G11C16/26 , G11C16/0483 , G11C16/08 , G11C16/20 , G11C16/30 , H10B41/27 , H10B43/27
摘要： A semiconductor storage device includes a semiconductor pillar, a first string having first memory cells connected in series, first word lines connected to the first memory cells, a second string having second memory cells connected in series, and second word lines connected to the second memory cells. Each of the first memory cells faces, and shares a channel in the semiconductor pillar with, one of the second memory cells. When reading data of the k-th first memory cell, a voltage of the first word line connected to the k-th first memory cell reaches a first voltage at a first timing, and a voltage of the second word line connected to at least one of the second memory cells other than the k-th second memory cell in the second string facing the k-th first memory cell reaches the first voltage at a second timing that is later than the first timing.

4. 发明授权

US11081175B2 Semiconductor device and memory device 有权
公开(公告)号：US11081175B2
公开(公告)日：2021-08-03
申请号：US16943638
申请日：2020-07-30
申请人： KIOXIA CORPORATION
发明人： Yusuke Niki , Atsushi Kawasumi , Takayuki Miyazaki
IPC分类号： G11C13/00 , H01L45/00
摘要： According to one embodiment, a device includes first lines transmitting a first signals; second lines receiving the first signals; and a first circuit including a first selector coupled to the first lines, a second selector coupled to the second lines, third lines and a fourth lines between the first and second selectors. Each of the third lines stores the second signals, each of the fourth lines stores the third signals. The first circuit counts a first number of second signals equivalent to the corresponding first signal; counts a second number of third signals equivalent to corresponding first signal of the first signals; and couples either the third or the fourth lines to the first and second lines via the first and second selectors, based on a result of comparison between the first and the second numbers.

5. 发明授权

US11942176B2 Semiconductor memory device 有权
公开(公告)号：US11942176B2
公开(公告)日：2024-03-26
申请号：US17475482
申请日：2021-09-15
申请人： Kioxia Corporation
发明人： Tomoya Sanuki , Xu Li , Masayuki Miura , Takayuki Miyazaki , Toshio Fujisawa , Hiroto Nakai , Hideko Mukaida , Mie Matsuo
IPC分类号： G11C5/00 , G11C5/14 , G11C16/30 , H02M3/158 , H10B41/27 , H10B43/27
CPC分类号： G11C5/14 , G11C16/30 , H02M3/1582 , H10B41/27 , H10B43/27
摘要： A semiconductor memory device has a plastic package including an inductor, a first memory chip including a booster circuit that boosts a voltage from a first voltage to a second voltage using the inductor, and a second memory chip having a terminal supplied with the second voltage from the first memory chip.

6. 发明授权

US11257536B2 Semiconductor storage device and control method thereof 有权
公开(公告)号：US11257536B2
公开(公告)日：2022-02-22
申请号：US17002512
申请日：2020-08-25
申请人： KIOXIA CORPORATION
发明人： Takayuki Miyazaki
IPC分类号： G11C16/04 , G11C11/4074 , G11C11/4076 , G11C5/02 , G11C11/4094 , G11C5/06 , G11C11/408
摘要： A semiconductor storage device includes a first wiring, a second wiring, a memory cell including a first element configured to store data and a second element connected to the first element, the memory cell having a first end connected to the first wiring and a second end connected to the second wiring, and a control circuit configured to apply a voltage that increase with a first slope and then with a second slope that is smaller than the first slope, to the memory cell using the first wiring and the second wiring.

7. 发明授权

US11682455B2 Semiconductor storage device 有权
公开(公告)号：US11682455B2
公开(公告)日：2023-06-20
申请号：US17349095
申请日：2021-06-16
申请人： Kioxia Corporation
发明人： Takayuki Miyazaki
IPC分类号： G11C13/00 , H10B63/00
CPC分类号： G11C13/003 , G11C13/004 , G11C13/0069 , H10B63/30 , H10B63/80 , G11C2213/79
摘要： A memory includes first lines arrayed along a surface of a substrate. Second lines are arrayed along the surface of the substrate either above or below the first lines and intersecting with the first lines. Resistance change memory cells are provided to correspond to intersection regions between the first lines and the second lines, respectively. First switching elements are arranged on a side of first ends of the first lines and transmitting a first voltage for writing or reading data to at least one memory cell among the memory cells. Second switching elements are arranged on a side of second ends of the first lines on an opposite side to the first ends and transmitting the first voltage to at least another one memory cell among the memory cells. The first switching elements and the second switching elements are connected to different ones of the first lines, respectively.

8. 发明申请

US20230010266A1 SEMICONDUCTOR INTEGRATED CIRCUIT 有权
公开(公告)号：US20230010266A1
公开(公告)日：2023-01-12
申请号：US17679924
申请日：2022-02-24
申请人： KIOXIA CORPORATION
发明人： Takayuki Miyazaki , Yuki Ishizaki
IPC分类号： G11C7/06 , G11C7/12
摘要： A semiconductor integrated circuit includes a plurality of sense amplifier units including a first group of sense amplifier units and a second group of sense amplifier units, a first data bus, a second data bus, a transfer circuit between the first data bus and the second data bus, and a data latch connected to the second data bus and to the first data bus through the transfer circuit and the second data bus. Each sense amplifier unit is connected to one of the bit lines. The first data bus is connected to each of the sense amplifier units in the first group. The second data bus is connected to each of the sense amplifier units in the second group. The transfer circuit controls the transfer of data between the first data bus and the second data bus in both directions.

9. 发明授权

US10949132B1 Semiconductor storage device 有权
公开(公告)号：US10949132B1
公开(公告)日：2021-03-16
申请号：US16803883
申请日：2020-02-27
申请人： KIOXIA CORPORATION
发明人： Reika Tanaka , Takayuki Miyazaki , Masumi Saitoh
IPC分类号： G06F3/06 , H01L27/24
摘要： A storage device includes a substrate, first wirings arranged in a first direction and extending in a second direction, second wirings arranged in the second direction and extending in the first direction, resistance portions between the first and second wirings, third wirings between the second wirings and the substrate, arranged in the second direction and extending in a third direction, semiconductor portions each connected to second and third wirings, a fourth wiring extending in the second direction and facing the semiconductor portions, insulating portions between the semiconductor portions and the fourth wiring, and a contact connected to each first wiring. The semiconductor portions include a first portion and a second portion closer to the contact, and a length in the second direction of an insulating portion between the first portion and the fourth wiring is greater than that of another insulating portion between the second portion and the fourth wiring.

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