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1. 发明申请

US20050056220A1 Method and apparatus for forming silicon oxide film 失效
标题翻译：用于形成氧化硅膜的方法和装置
公开(公告)号：US20050056220A1
公开(公告)日：2005-03-17
申请号：US10879034
申请日：2004-06-30
申请人： Kimiya Aoki , Katsushi Suzuki , Asami Shirakawa , Kenji Tago , Keisuke Suzuki , Kazuo Saki , Shinji Mori
发明人： Kimiya Aoki , Katsushi Suzuki , Asami Shirakawa , Kenji Tago , Keisuke Suzuki , Kazuo Saki , Shinji Mori
IPC分类号： H01L21/316 , C23C16/00 , H01L21/00 , H01L21/205 , H01L21/31
CPC分类号： H01L21/67109 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.
摘要翻译：在形成氧化硅膜的方法中，将表面上具有硅层的目标基板装载到反应容器内的处理区域中，同时将处理区域设定为负载温度为400℃以下。然后，将装载目标基板的处理区域从加载温度加热到650℃以上的处理温度。在处理区域的加热期间，将水蒸汽供应到反应容器中，同时将水蒸汽设置为在处理区域的气氛中具有第一浓度，并将处理区域设定为具有第一减压。在将处理区域加热到处理温度之后，将氧化气体供应到反应容器中，从而氧化硅层以形成氧化硅膜。

2. 发明授权

US07700156B2 Method and apparatus for forming silicon oxide film 失效
标题翻译：用于形成氧化硅膜的方法和装置
公开(公告)号：US07700156B2
公开(公告)日：2010-04-20
申请号：US10879034
申请日：2004-06-30
申请人： Kimiya Aoki , Katsushi Suzuki , Asami Shirakawa , Kenji Tago , Keisuke Suzuki , Kazuo Saki , Shinji Mori
发明人： Kimiya Aoki , Katsushi Suzuki , Asami Shirakawa , Kenji Tago , Keisuke Suzuki , Kazuo Saki , Shinji Mori
IPC分类号： C23C16/00 , C23C14/10 , C23C16/40
CPC分类号： H01L21/67109 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.
摘要翻译：在形成氧化硅膜的方法中，将表面上具有硅层的目标基板装载到反应容器内的处理区域中，同时将处理区域设定为负载温度为400℃以下。然后，将装载目标基板的处理区域从加载温度加热到650℃以上的处理温度。在处理区域的加热期间，将水蒸汽供应到反应容器中，同时将水蒸汽设置为在处理区域的气氛中具有第一浓度，并将处理区域设定为具有第一减压。在将处理区域加热到处理温度之后，将氧化气体供应到反应容器中，从而氧化硅层以形成氧化硅膜。

3. 发明申请

US20070026149A1 Semiconductor manufacturing apparatus and method of manufacturing semiconductor device 审中-公开
标题翻译：半导体制造装置及半导体装置的制造方法
公开(公告)号：US20070026149A1
公开(公告)日：2007-02-01
申请号：US11494735
申请日：2006-07-28
申请人： Takashi Shimizu , Kazuo Saki , Kazuhiro Nishiki , Akihito Yamamoto , Shinji Mori
发明人： Takashi Shimizu , Kazuo Saki , Kazuhiro Nishiki , Akihito Yamamoto , Shinji Mori
IPC分类号： C23C16/00
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/3144 , H01L22/20
摘要： In a process of annealing an insulating film such as a silicon oxide film (SiO2) or a silicon oxynitride film (SiON) provided in a processing chamber 6 within an atmosphere of an inert gas 2 guided from a first mass flow controller 3 via a gas inlet 7, an amount of SiO sublimated from the surface of the insulating film in the processing chamber 6 is measured by a mass spectrometer 10, and an amount of oxygen gas 4 guided to the processing chamber 6 from a second mass flow controller 5 is controlled by a controller 1 so that the SiO concentration does not exceed a predetermined level, thereby effectively controlling the SiO sublimation. As a result, the film deterioration caused by the SiO sublimation is prevented and an insulating film having a high reliability and good characteristics can be formed in a controllable manner.
摘要翻译：在将惰性气体2的气氛2中引导的处理室6中设置的氧化硅膜（SiO 2/2）或氧氮化硅膜（SiON）等绝缘膜退火的工序中，通过气体入口7的第一质量流量控制器3，通过质谱仪10测量从处理室6中的绝缘膜的表面升华的SiO的量，并且从处理室6中引导到处理室6的量的氧气第二质量流量控制器5由控制器1控制，使得SiO浓度不超过预定水平，从而有效地控制SiO升华。结果，防止了由SiO升华引起的膜劣化，并且可以以可控的方式形成具有高可靠性和良好特性的绝缘膜。

4. 发明申请

US20050202686A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20050202686A1
公开(公告)日：2005-09-15
申请号：US10884987
申请日：2004-07-07
申请人： Kazuo Saki , Shinji Mori , Takashi Shimizu
发明人： Kazuo Saki , Shinji Mori , Takashi Shimizu
IPC分类号： H01L21/76 , H01L21/302 , H01L21/31 , H01L21/318 , H01L21/3205 , H01L21/322 , H01L21/336 , H01L29/78
CPC分类号： H01L29/78 , H01L21/0214 , H01L21/02164 , H01L21/02332 , H01L21/02337 , H01L21/2254 , H01L21/28176 , H01L21/3105 , H01L21/823418 , H01L21/823462 , H01L21/823481
摘要： A method of manufacturing a semiconductor device according to an embodiment of the present invention comprises forming a semiconductor element on a semiconductor substrate, forming a silicon oxide film containing nitrogen on the semiconductor element and injecting heavy hydrogen into the silicon oxide film containing nitrogen.
摘要翻译：根据本发明实施例的制造半导体器件的方法包括在半导体衬底上形成半导体元件，在半导体元件上形成含有氮的氧化硅膜，并将重氢注入到含氮的氧化硅膜中。

5. 发明授权

US5960297A Shallow trench isolation structure and method of forming the same 失效
标题翻译：通过各向同性蚀刻具有暴露的顶部结构的衬垫氮化物层形成浅沟槽隔离结构的方法
公开(公告)号：US5960297A
公开(公告)日：1999-09-28
申请号：US887137
申请日：1997-07-02
申请人： Kazuo Saki
发明人： Kazuo Saki
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8242 , H01L27/108
CPC分类号： H01L21/76224
摘要： An isolation structure is provided by a method which includes forming a pad oxide layer on a semiconductor substrate and then forming a pad nitride layer on the pad oxide layer. An opening is then formed which extends through the pad nitride layer, the pad oxide layer, and into the semiconductor substrate. The pad nitride layer is then isotropically etched, thereby pulling-back the pad nitride layer from the portion of the opening extending through the pad oxide layer. An insulating layer is formed to fill in the opening including the portion of the opening formed by the pulling-back of the pad nitride layer. The deposited insulating layer is then planarized using the pulled-back nitride layer as a stopper layer. The pulled-back pad nitride layer and the pad oxide layer are then removed.
摘要翻译：通过一种方法提供隔离结构，该方法包括在半导体衬底上形成衬垫氧化层，然后在衬垫氧化物层上形成衬垫氮化物层。然后形成延伸穿过衬垫氮化物层，衬垫氧化物层并进入半导体衬底的开口。然后对衬垫氮化物层进行各向同性蚀刻，从而从延伸穿过焊盘氧化物层的开口的部分拉回焊盘氮化物层。形成绝缘层以填充包括由衬垫氮化物层的拉回形成的开口的部分的开口。然后使用拉回的氮化物层作为阻挡层来平坦化沉积的绝缘层。然后去除拉回衬垫氮化物层和衬垫氧化物层。

6. 发明授权

US06759314B1 Method for manufacturing semiconductor devices using thermal nitride films as gate insulating films 有权
标题翻译：使用氮化硅膜作为栅极绝缘膜的半导体器件的制造方法
公开(公告)号：US06759314B1
公开(公告)日：2004-07-06
申请号：US09670520
申请日：2000-09-26
申请人： Wakako Moriyama , Naoki Kai , Hiroaki Hazama , Keiki Nagai , Yuji Fukazawa , Kazuo Saki , Yoshio Ozawa , Yasumasa Suizu
发明人： Wakako Moriyama , Naoki Kai , Hiroaki Hazama , Keiki Nagai , Yuji Fukazawa , Kazuo Saki , Yoshio Ozawa , Yasumasa Suizu
IPC分类号： H01L21425
CPC分类号： H01L21/28202 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/28273 , H01L21/31662 , H01L27/115 , H01L27/11521 , H01L29/511 , H01L29/518
摘要： A thermal nitride film is formed as a gate insulating film on a silicon substrate, and after a gate electrode material is formed on the insulating film, it is patterned to form gate electrodes. After processing the electrodes, part of the gate insulating film other than a portion thereof which lies under the gate electrodes is removed. Further, an insulating film (a post oxidation film) is formed on side walls and upper surfaces of the stacked gate structures and the exposed main surface of the silicon substrate by use of thermal oxidation method.
摘要翻译：在硅衬底上形成作为栅极绝缘膜的热氮化膜，在绝缘膜上形成栅极电极材料之后，形成栅电极。在处理电极之后，除去位于栅电极下方的栅极绝缘膜的除了其一部分之外的部分。此外，通过使用热氧化法在堆叠的栅极结构的侧壁和上表面以及硅衬底的暴露的主表面上形成绝缘膜（后氧化膜）。

7. 发明申请

US20060269691A1 Plasma treatment apparatus and plasma treatment method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20060269691A1
公开(公告)日：2006-11-30
申请号：US11259050
申请日：2005-10-27
申请人： Kazuo Saki
发明人： Kazuo Saki
IPC分类号： H05H1/24 , C23C16/00 , B05C11/00
CPC分类号： C23C8/36 , C23C16/34 , C23C16/40 , C23C16/4404 , H01J37/32862 , H01J37/32935
摘要： A plasma treatment apparatus includes a susceptor, a silica cover covering a plasma generating area above the susceptor, a chamber housing the susceptor and the silica cover, a gas inlet introducing conditioning gas into the chamber, a plasma generator generating a plasma of the conditioning gas configured to perform conditioning of the silica cover, an analyzing unit configured to monitor changes in a nitride layer on the surface of the silica cover, and a control unit connected to the analyzing unit configured to determine completion of the conditioning based on the change in the nitride layer.
摘要翻译：一种等离子体处理装置，包括基座，覆盖基座上方的等离子体产生区域的二氧化硅盖，容纳基座和二氧化硅盖的腔室，将入口引入调节气体的气体入口，等离子体发生器，其产生调节气体的等离子体被配置为执行所述二氧化硅覆盖物的调节;分析单元，被配置为监测所述二氧化硅覆盖层的表面上的氮化物层的变化;以及控制单元，其连接到所述分析单元，所述控制单元被配置为基于所述二氧化硅覆盖物的变化来确定所述调节的完成氮化物层。

8. 发明授权

US07082346B2 Semiconductor manufacturing apparatus and semiconductor device manufacturing method 失效
标题翻译：半导体制造装置及半导体装置的制造方法
公开(公告)号：US07082346B2
公开(公告)日：2006-07-25
申请号：US10457353
申请日：2003-06-10
申请人： Kazuo Saki , Yukihiro Ushiku
发明人： Kazuo Saki , Yukihiro Ushiku
IPC分类号： G06F19/00
CPC分类号： H01L21/67276 , C23C16/52 , C23C16/54
摘要： A semiconductor manufacturing apparatus which continuously executes oxidation and CVD in a multiprocess apparatus includes an internal apparatus controller which selects the type of process and supplies a start signal and stop signal for the process to the multiprocess apparatus, and a process controller which calculates the process state for each process on the basis of the internal information of the apparatus. Upon receiving the stop signal from the controller, the controller sends the stop signal to the multiprocess apparatus to stop the current process by the multiprocess apparatus and switches to the next process.
摘要翻译：一种在多处理装置中连续执行氧化和CVD的半导体制造装置，具有：内部装置控制器，其选择所述处理的种类，并向所述多处理装置供给所述处理的起始信号和停止信号;以及处理控制器，根据设备的内部信息为每个过程。在从控制器接收到停止信号时，控制器向多处理装置发送停止信号，以停止多处理装置的当前进程并切换到下一个进程。

9. 发明授权

US06291300B1 Manufacturing method of semiconductor devices 失效
公开(公告)号：US06291300B1
公开(公告)日：2001-09-18
申请号：US09661442
申请日：2000-09-13
申请人： Yuji Fukazawa , Kazuo Saki
发明人： Yuji Fukazawa , Kazuo Saki
IPC分类号： H01L21336
CPC分类号： H01L21/76224
摘要： An element isolation method of a semiconductor device comprises the steps of forming an oxide film on a semiconductor substrate; forming a nitride film on the oxide film; forming an isolation trench on the semiconductor device, the isolation trench being formed through the nitride film and oxide film; forming an oxide insulation layer on the semiconductor substrate to fill the isolation trench and cover the nitride film; flattening the surface of the semiconductor substrate to expose the nitride film by removing a surface portion of the oxide insulation layer in the isolation trench and the oxide insulation layer on the nitride film; heating the flattened semiconductor substrate in a nitrogen-containing gas atmosphere under reduced pressure to form an oxy-nitride film at an interface between an inside wall of the isolation trench and the oxide insulation layer in the isolation trench; and removing the nitride film and the oxide film on the semiconductor substrate.

10. 发明申请

US20100089316A1 Plasma treatment apparatus and plasma treatment method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20100089316A1
公开(公告)日：2010-04-15
申请号：US12591989
申请日：2009-12-07
申请人： Kazuo Saki
发明人： Kazuo Saki
IPC分类号： C23C16/52
CPC分类号： C23C8/36 , C23C16/34 , C23C16/40 , C23C16/4404 , H01J37/32862 , H01J37/32935
摘要： A plasma treatment apparatus includes a susceptor, a silica cover covering a plasma generating area above the susceptor, a chamber housing the susceptor and the silica cover, a gas inlet introducing conditioning gas into the chamber, a plasma generator generating a plasma of the conditioning gas configured to perform conditioning of the silica cover, an analyzing unit configured to monitor changes in a nitride layer on the surface of the silica cover, and a control unit connected to the analyzing unit configured to determine completion of the conditioning based on the change in the nitride layer.
摘要翻译：一种等离子体处理装置，包括基座，覆盖基座上方的等离子体产生区域的二氧化硅盖，容纳基座和二氧化硅盖的腔室，将入口引入调节气体的气体入口，等离子体发生器，其产生调节气体的等离子体被配置为执行所述二氧化硅覆盖物的调节;分析单元，被配置为监测所述二氧化硅覆盖层的表面上的氮化物层的变化;以及控制单元，其连接到所述分析单元，所述控制单元被配置为基于所述二氧化硅覆盖物的变化来确定所述调节的完成氮化物层。

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