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    • 1. 发明授权
    • Gate array semiconductor device
    • 门阵列半导体器件
    • US6084255A
    • 2000-07-04
    • US126092
    • 1998-07-30
    • Kimio UedaTakanori HirotaYoshiki WadaKoichiro Mashiko
    • Kimio UedaTakanori HirotaYoshiki WadaKoichiro Mashiko
    • H01L21/82H01L27/02H01L27/118H01L27/12H01L27/10
    • H01L27/0207H01L27/11807H01L27/1203
    • In each of basic cells (BC) arranged in array in an SOI layer, PMOS and NMOS transistors are symmetrically formed. Body regions (11) and (12) are formed to divide source/drain layers (1) and (2), respectively, and gate electrodes (3) and (4) are formed on the body regions (11) and (12) respectively to sandwich gate insulating films therebetween. The gate electrodes (3) and (4) are connected at their both ends to gate contact regions (5) to (8), respectively, and the body regions (11) and (12) are connected at their one ends to body contact regions (9) and (10), respectively. The body contact regions (9) and (10) are so arranged as to sandwich the gate contact regions (5) and (7) together with the gate electrodes (3) and (4), respectively. Being of a SOI type, the device achieves high-speed operation and low power consumption. Further, with positional relation between the body contact regions (9), (10) and the gate contact regions (5), (7), the device is capable of freely setting the transistors to be of either a gate control type or a gate fixed type. As a result, the gate array type semiconductor device achieves high-speed operation and low power consumption.
    • 在以SOI阵列排列的每个基本单元(BC)中,对称地形成PMOS和NMOS晶体管。 主体区域(11)和(12)分别形成为分隔源极/漏极层(1)和(2),并且在主体区域(11)和(12)上形成栅电极(3)和(4) 分别在其间夹着栅极绝缘膜。 栅电极(3)和(4)的两端分别连接到栅极接触区域(5)至(8),并且主体区域(11)和(12)在其一端连接到主体接触 区域(9)和(10)。 主体接触区域(9)和(10)被布置成分别将栅极接触区域(5)和(7)与栅极电极(3)和(4)夹在一起。 作为SOI型,该器件实现了高速操作和低功耗。 此外,通过体接触区域(9),(10)和栅极接触区域(5),(7)之间的位置关系,该器件能够自由地将晶体管设置为栅极控制型或栅极 固定式。 结果,门阵列型半导体器件实现了高速操作和低功耗。
    • 8. 发明授权
    • Semiconductor integrated circuit
    • 半导体集成电路
    • US5945843A
    • 1999-08-31
    • US950421
    • 1997-10-24
    • Takanori HirotaYasushi Hayakawa
    • Takanori HirotaYasushi Hayakawa
    • H03K19/086H03K19/0175
    • H03K19/017527
    • A level conversion circuit as a semiconductor integrated circuit has a first load resistance (R1), a second load resistance (R2), a first NMOS transistor (MN3) and a second NMOS transistor (MN4) connected to them (R1 and R2) in parallel, respectively, that are driven directly by positive CMOS level signals, a first bipolar transistor (Q1), and a second bipolar transistor (Q2). Both emitters of the first and second bipolar transistors (Q1 and Q2) are connected commonly, and a voltage potential that is lower than a voltage potential of a collector of the first bipolar transistor (Q1) by a predetermined voltage potential is supplied into a base of the second bipolar transistor (Q2).
    • 作为半导体集成电路的电平转换电路具有与其连接的第一负载电阻(R1),第二负载电阻(R2),第一NMOS晶体管(MN3)和第二NMOS晶体管(MN4)(R1和R2) 分别由正CMOS电平信号直接驱动,第一双极晶体管(Q1)和第二双极晶体管(Q2)并联。 第一和第二双极晶体管(Q1和Q2)的两个发射极共同连接,并且将低于预定电压电位的第一双极晶体管(Q1)的集电极的电压电位的电压电位供给到基极 的第二双极晶体管(Q2)。