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1. 发明授权

US08173302B2 Sulfur-carbon material 有权
标题翻译：硫碳材料
公开(公告)号：US08173302B2
公开(公告)日：2012-05-08
申请号：US12136846
申请日：2008-06-11
申请人： Kimber L. Stamm , Monique N. Richard , Linda F. Nazar , Xiulei Ji , Kyu-Tae Lee
发明人： Kimber L. Stamm , Monique N. Richard , Linda F. Nazar , Xiulei Ji , Kyu-Tae Lee
IPC分类号： H01M4/13 , H01M4/58 , H01M4/64 , H01M4/72 , H01M4/80
CPC分类号： H01M4/583 , H01M4/364 , H01M4/38 , H01M4/581 , H01M4/62 , H01M10/0525 , H01M2004/021 , Y10T428/249967 , Y10T428/249978
摘要： An electrode material having carbon and sulfur is provided. The carbon is in the form of a porous matrix having nanoporosity and the sulfur is sorbed into the nanoporosity of the carbon matrix. The carbon matrix can have a volume of nanoporosity between 10 and 99%. In addition, the sulfur can occupy between 5 to 99% of the nanoporosity. A portion of the carbon structure that is only partially filled with the sulfur remains vacant allowing electrolyte egress. In some instances, the nanoporosity has nanopores and nanochannels with an average diameter between 1 nanometer and 999 nanometers. The sulfur is sorbed into the nanoporosity using liquid transport or other mechanisms providing a material having intimate contact between the electronically conductive carbon structure and the electroactive sulfur.
摘要翻译：提供了具有碳和硫的电极材料。碳是具有纳米孔隙度的多孔基体的形式，并且硫被吸附到碳基质的纳米孔隙中。碳基质可以具有10至99％之间的纳米孔隙体积。此外，硫可以占据5至99％的纳米孔隙度。仅部分填充硫的碳结构的一部分保持空位，允许电解质排出。在一些情况下，纳米孔隙度具有纳米孔和平均直径在1纳米到999纳米之间的纳米通道。使用液体输送或提供在电子导电性碳结构和电活性硫之间具有紧密接触的材料的其它机理，将硫吸收到纳米孔隙中。

2. 发明申请

US20140039850A1 METHOD AND APPARATUS OF FORMING SOLAR RADIATION MODEL APPLYING TOPOGRAPHICAL EFFECTS 审中-公开
标题翻译：形成太阳辐射模型的方法和装置应用地形影响
公开(公告)号：US20140039850A1
公开(公告)日：2014-02-06
申请号：US13565976
申请日：2012-08-03
申请人： Joon-Bum Jee , Kyu-Tae Lee , Young-Jean Choi , Il-Sung Zo
发明人： Joon-Bum Jee , Kyu-Tae Lee , Young-Jean Choi , Il-Sung Zo
IPC分类号： G06F17/10
CPC分类号： G06F17/5009 , F24S2201/00 , G01V1/28
摘要： Provided are a method and an apparatus of forming a solar radiation model applying topographical effects, the method comprising: calculating a slope angle and a slope aspect of a selected point on a digital elevation model data; calculating a final direct solar radiation of the selected point; calculating a final diffuse solar radiation of the selected point using the slope angle of the selected point, a sky-view factor of the selected point, and a diffuse solar radiation on the horizontal surface of the selected point; and calculating a global solar radiation using the final direct solar radiation and the final diffuse solar radiation.
摘要翻译：提供一种形成应用地形效应的太阳辐射模型的方法和装置，所述方法包括：在数字高程模型数据上计算所选点的倾斜角和斜率方面; 计算所选点的最终直接太阳辐射; 使用所选点的倾斜角，所选点的天空因子和所选点的水平表面上的漫射太阳辐射来计算所选点的最终漫射太阳辐射; 并使用最终的直接太阳辐射和最终的漫射太阳辐射计算全球太阳辐射。

3. 发明申请

US20130226537A1 METHOD AND APPARATUS FOR PROVIDING ONE LAYER SOLAR RADIATION MODEL FOR CALCULATION OF INSOLATION 审中-公开
标题翻译：提供单层太阳辐射模型计算绝缘的方法和装置
公开(公告)号：US20130226537A1
公开(公告)日：2013-08-29
申请号：US13598816
申请日：2012-08-30
申请人： Joon-Bum Jee , Kyu-Tae Lee , Il-Sung Zo , Young-Jean Choi
发明人： Joon-Bum Jee , Kyu-Tae Lee , Il-Sung Zo , Young-Jean Choi
IPC分类号： G06F17/10
CPC分类号： G06F17/10 , G06F17/5009 , G06F2217/16
摘要： A method of providing a one layer solar radiation model for calculation of insolation includes: calculating direct solar radiation at a selected position, based on extraterrestrial radiation, eccentricity of the earth from the sun, and transmittance of gases in the atmosphere; calculating final diffuse solar radiation at the selected position, by using diffuse solar radiation due to air molecules, diffuse solar radiation due to aerosol, and multi-diffuse solar radiation with the atmosphere and the surface of the earth; accumulating the calculated direct solar radiation and final diffuse solar radiation for a predetermined wavelength region; calculating the direct solar radiation reaching the surface of the earth and the final diffuse solar radiation reaching the surface of the earth by applying the amount of cloud; and calculating global solar radiation at the selected positions.
摘要翻译：提供用于计算日照的单层太阳辐射模型的方法包括：基于地外辐射，地球从太阳的偏心率和大气中的气体的透射率计算在选定位置处的直接太阳辐射; 通过使用由于空气分子引起的漫射太阳辐射，由于气溶胶引起的漫射太阳辐射，以及与大气和地球表面的多漫射太阳辐射，计算选定位置处的最终漫射太阳辐射; 将计算的直接太阳辐射和最终的漫射太阳辐射累积到预定波长区域; 计算到达地球表面的直接太阳辐射和通过应用云量到达地球表面的最终漫射太阳辐射; 并计算所选位置的全球太阳辐射。

4. 发明申请

US20080038182A1 Spherical carbons and method for preparing the same 审中-公开
标题翻译：球形碳及其制备方法
公开(公告)号：US20080038182A1
公开(公告)日：2008-02-14
申请号：US11907496
申请日：2007-10-12
申请人： Ou-Jung Kwon , Seung-Mo Oh , Ki-Young Lee , Myung-Hwan Kim , Kyu-Tae Lee
发明人： Ou-Jung Kwon , Seung-Mo Oh , Ki-Young Lee , Myung-Hwan Kim , Kyu-Tae Lee
IPC分类号： C01B31/02
CPC分类号： H01M4/583 , C01B32/05 , C01B32/20 , C01P2004/32 , C01P2004/61 , C01P2006/12 , H01M4/133 , H01M10/052
摘要： The present invention provides a method for preparing spherical carbon comprising step of heat-treating a mixture of a carbon precursor and dispersion media, a spherical non-graphitizable carbon using the same, and a method for preparing spherical artificial graphite.
摘要翻译：本发明提供一种制备球形碳的方法，其包括用碳前体和分散介质的混合物进行热处理的步骤，使用该方法的球形不可石墨化碳，以及制备球形人造石墨的方法。

5. 发明授权

US07297320B2 Spherical carbons and method for preparing the same 有权
标题翻译：球形碳及其制备方法
公开(公告)号：US07297320B2
公开(公告)日：2007-11-20
申请号：US10297174
申请日：2002-04-17
申请人： Ou-Jung Kwon , Seung-Mo Oh , Ki-Young Lee , Myung-Hwan Kim , Kyu-Tae Lee
发明人： Ou-Jung Kwon , Seung-Mo Oh , Ki-Young Lee , Myung-Hwan Kim , Kyu-Tae Lee
IPC分类号： C01B31/02
CPC分类号： H01M4/583 , C01B32/05 , C01B32/20 , C01P2004/32 , C01P2004/61 , C01P2006/12 , H01M4/133 , H01M10/052
摘要： The present invention provides a method for preparing spherical carbon comprising step of heat-treating a mixture of a carbon precursor and dispersion media, a spherical non-graphitizable carbon using the same, and a method for preparing spherical artificial graphite.
摘要翻译：本发明提供一种制备球形碳的方法，其包括用碳前体和分散介质的混合物进行热处理的步骤，使用其的球形不可石墨化碳，以及制备球形人造石墨的方法。

6. 发明申请

US20050122443A1 Array substrate for liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置用阵列基板及其制造方法
公开(公告)号：US20050122443A1
公开(公告)日：2005-06-09
申请号：US10964922
申请日：2004-10-15
申请人： Jin-Young Kim , Gyoo-Chul Jo , Kyu-Tae Lee , Beung-Hwa Jeong , Jin-Gyu Kang
发明人： Jin-Young Kim , Gyoo-Chul Jo , Kyu-Tae Lee , Beung-Hwa Jeong , Jin-Gyu Kang
IPC分类号： G02F1/136 , G02F1/1362
CPC分类号： G02F1/136286 , G02F2001/13629
摘要： A semiconductor device includes a substrate having source and drain regions, a gate insulating layer on the substrate, a gate electrode on the gate insulating layer, an interlayer on the gate electrode, a source electrode connected to the source region, and a drain electrode connected to the drain region, wherein at least one of the gate electrode, the source electrode and the drain electrode includes a first metal layer of molybdenum (Mo)-titanium (Ti) alloy, a second metal layer of one of metallic metals including copper (Cu), aluminum (Al), silver (Ag) and gold (Au) on the first metal layer.
摘要翻译：半导体器件包括具有源极和漏极区域的衬底，衬底上的栅极绝缘层，栅极绝缘层上的栅极电极，栅极电极上的中间层，连接到源极区域的源极和连接到漏极电极的漏电极其中所述栅电极，所述源电极和所述漏电极中的至少一个包括钼（Mo） - 钛（Ti）合金的第一金属层，包括铜的金属金属之一的第二金属层 Cu），铝（Al），银（Ag）和金（Au）。

7. 发明申请

US20090162753A1 SPHERICAL CARBONS AND METHOD FOR PREPARING THE SAME 审中-公开
标题翻译：球形碳及其制备方法
公开(公告)号：US20090162753A1
公开(公告)日：2009-06-25
申请号：US12348092
申请日：2009-01-02
申请人： Ou-Jung Kwon , Seung-Mo Oh , Ki-Young Lee , Myung-Hwan Kim , Kyu-Tae Lee
发明人： Ou-Jung Kwon , Seung-Mo Oh , Ki-Young Lee , Myung-Hwan Kim , Kyu-Tae Lee
IPC分类号： H01M4/58 , C01B31/00
CPC分类号： H01M4/583 , C01B32/05 , C01B32/20 , C01P2004/32 , C01P2004/61 , C01P2006/12 , H01M4/133 , H01M10/052
摘要： The present invention provides a method for preparing spherical carbon comprising step of heat-treating a mixture of a carbon precursor and dispersion media, a spherical non-graphitizable carbon using the same, and a method for preparing spherical artificial graphite.
摘要翻译：本发明提供一种制备球形碳的方法，其包括用碳前体和分散介质的混合物进行热处理的步骤，使用其的球形不可石墨化碳和制备球形人造石墨的方法。

8. 发明授权

US07336324B2 Array substrate for liquid crystal display device and fabricating method thereof 有权
标题翻译：液晶显示装置用阵列基板及其制造方法
公开(公告)号：US07336324B2
公开(公告)日：2008-02-26
申请号：US10964922
申请日：2004-10-15
申请人： Jin-Young Kim , Gyoo-Chul Jo , Kyu-Tae Lee , Beung-Hwa Jeong , Jin-Gyu Kang
发明人： Jin-Young Kim , Gyoo-Chul Jo , Kyu-Tae Lee , Beung-Hwa Jeong , Jin-Gyu Kang
IPC分类号： G02F1/136 , H01I29/06
CPC分类号： G02F1/136286 , G02F2001/13629
摘要： A semiconductor device includes a substrate having source and drain regions, a gate insulating layer on the substrate, a gate electrode on the gate insulating layer, an interlayer on the gate electrode, a source electrode connected to the source region, and a drain electrode connected to the drain region, wherein at least one of the gate electrode, the source electrode and the drain electrode includes a first metal layer of molybdenum (Mo)-titanium (Ti) alloy, a second metal layer of one of metallic metals including copper (Cu), aluminum (Al), silver (Ag) and gold (Au) on the first metal layer.
摘要翻译：半导体器件包括具有源极和漏极区域的衬底，衬底上的栅极绝缘层，栅极绝缘层上的栅极电极，栅极电极上的中间层，连接到源极区域的源极和连接到漏极电极的漏电极其中所述栅电极，所述源电极和所述漏电极中的至少一个包括钼（Mo） - 钛（Ti）合金的第一金属层，包括铜的金属金属之一的第二金属层 Cu），铝（Al），银（Ag）和金（Au）。

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