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1. 发明授权

US09424904B2 Magnetic memory devices including oxide multiferroic material 有权
标题翻译：磁记忆装置包括氧化物多铁性材料
公开(公告)号：US09424904B2
公开(公告)日：2016-08-23
申请号：US14526489
申请日：2014-10-28
申请人： Kilho Lee , Sangyong Kim , Woojin Kim , KyungTae Nam
发明人： Kilho Lee , Sangyong Kim , Woojin Kim , KyungTae Nam
IPC分类号： G11C11/02 , G11C11/16 , G11C11/22
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/221
摘要： A magnetic memory device is provided. The magnetic memory device includes a plurality of variable resistance devices connected to a word line, and a plurality of bit lines, each of which provides an electrical pathway between a corresponding one of the variable resistance devices and a read and write circuit. Each of the variable resistance devices includes a free layer and a pinned layer spaced apart from each other and having a tunnel barrier interposed therebetween, an assistant layer spaced apart from the tunnel barrier and having the free layer interposed therebetween, and an exchange coupling layer arranged between the free layer and the assistant layer. The exchange coupling layer has an electric polarization, which results from its ferroelectric property, and having a direction that can be changed by a voltage applied to the corresponding one of the bit lines.
摘要翻译：提供磁存储器件。磁存储器件包括连接到字线的多个可变电阻器件和多个位线，每个位线提供相应的一个可变电阻器件与读写电路之间的电路径。每个可变电阻装置包括自由层和钉扎层，彼此间隔开并具有插入其间的隧道势垒，辅助层与隧道势垒间隔开并且具有插入其间的自由层，并且布置有交换耦合层在自由层和辅助层之间。交换耦合层具有由其铁电性质产生的电极化，并且具有可以通过施加到相应的一个位线的电压而改变的方向。

2. 发明申请

US20120217599A1 MAGNETIC MEMORY DEVICES WITH THIN CONDUCTIVE BRIDGES 有权
标题翻译：具有薄导电桥的磁记忆装置
公开(公告)号：US20120217599A1
公开(公告)日：2012-08-30
申请号：US13469979
申请日：2012-05-11
申请人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
发明人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
IPC分类号： H01L29/82
CPC分类号： H01L43/12
摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
摘要翻译：磁存储器件包括在衬底上的自由层和引导层。绝缘层介于自由层和引导层之间。至少一个导电桥通过绝缘层并电连接自由层和引导层。可以在引导层和绝缘层之间插入扩散阻挡层。该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。还描述了相关的制造方法。

3. 发明授权

US08575667B2 Magnetic memory devices with thin conductive bridges 有权
标题翻译：具有薄导电桥的磁存储器件
公开(公告)号：US08575667B2
公开(公告)日：2013-11-05
申请号：US13469979
申请日：2012-05-11
申请人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
发明人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
IPC分类号： H01L21/02
CPC分类号： H01L43/12
摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
摘要翻译：磁存储器件包括在衬底上的自由层和引导层。绝缘层介于自由层和引导层之间。至少一个导电桥通过绝缘层并电连接自由层和引导层。可以在引导层和绝缘层之间插入扩散阻挡层。该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。还描述了相关的制造方法。

4. 发明申请

US20100041168A1 METHODS OF FABRICATING MAGNETIC MEMORY DEVICES WITH THIN CONDUCTIVE BRIDGES 有权
标题翻译：制造具有薄导电桥的磁记忆体装置的方法
公开(公告)号：US20100041168A1
公开(公告)日：2010-02-18
申请号：US12539747
申请日：2009-08-12
申请人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
发明人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
IPC分类号： H01L43/00
CPC分类号： H01L43/12
摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
摘要翻译：磁存储器件包括在衬底上的自由层和引导层。绝缘层介于自由层和引导层之间。至少一个导电桥通过绝缘层并电连接自由层和引导层。可以在引导层和绝缘层之间插入扩散阻挡层。该装置还可以包括在与绝缘层相对的自由层侧面上具有固定磁化方向的参考层和参考层与自由层之间的隧道势垒。还描述了相关的制造方法。

5. 发明授权

US08722211B2 Magnetic memory devices and methods of manufacturing such magnetic memory devices 有权
标题翻译：磁存储器件和制造这种磁存储器件的方法
公开(公告)号：US08722211B2
公开(公告)日：2014-05-13
申请号：US12656145
申请日：2010-01-19
申请人： Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
发明人： Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
IPC分类号： G11C11/15 , G11B5/39 , G11C11/14 , G01R33/09 , H01F10/10 , H01F10/14 , H01F10/16
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11C11/15 , G11C11/161 , H01F10/10 , H01F10/14 , H01F10/16 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T428/1114
摘要： A magnetic memory device may include a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer arranged on a substrate. The tunnel barrier layer may include a crystal structure and may be arranged between the first ferromagnetic layer and the second ferromagnetic layer. At least the first ferromagnetic layer may include a first layer in contact with the tunnel barrier layer and a second layer in contact with the first layer, and an orientation of the first layer with respect to the tunnel barrier layer may be greater than an orientation of the second layer with respect to the tunnel barrier layer.
摘要翻译：磁存储器件可以包括第一铁磁层，第二铁磁层和布置在衬底上的隧道势垒层。隧道势垒层可以包括晶体结构，并且可以布置在第一铁磁层和第二铁磁层之间。至少第一铁磁层可以包括与隧道势垒层接触的第一层和与第一层接触的第二层，并且第一层相对于隧道势垒层的取向可以大于相对于隧道势垒层的第二层。

6. 发明授权

US08198102B2 Methods of fabricating magnetic memory devices with thin conductive bridges 有权
标题翻译：用薄导电桥制造磁存储器件的方法
公开(公告)号：US08198102B2
公开(公告)日：2012-06-12
申请号：US12539747
申请日：2009-08-12
申请人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
发明人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
IPC分类号： H01L21/00
CPC分类号： H01L43/12
摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
摘要翻译：磁存储器件包括在衬底上的自由层和引导层。绝缘层介于自由层和引导层之间。至少一个导电桥通过绝缘层并电连接自由层和引导层。可以在引导层和绝缘层之间插入扩散阻挡层。该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。还描述了相关的制造方法。

7. 发明申请

US20100183902A1 Magnetic memory devices and methods of manufacturing such magnetic memory devices 有权
标题翻译：磁存储器件和制造这种磁存储器件的方法
公开(公告)号：US20100183902A1
公开(公告)日：2010-07-22
申请号：US12656145
申请日：2010-01-19
申请人： Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
发明人： Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
IPC分类号： G11B5/39
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11C11/15 , G11C11/161 , H01F10/10 , H01F10/14 , H01F10/16 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T428/1114
摘要： A magnetic memory device may include a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer arranged on a substrate. The tunnel barrier layer may include a crystal structure and may be arranged between the first ferromagnetic layer and the second ferromagnetic layer. At least the first ferromagnetic layer may include a first layer in contact with the tunnel barrier layer and a second layer in contact with the first layer, and an orientation of the first layer with respect to the tunnel barrier layer may be greater than an orientation of the second layer with respect to the tunnel barrier layer.
摘要翻译：磁存储器件可以包括第一铁磁层，第二铁磁层和布置在衬底上的隧道势垒层。隧道势垒层可以包括晶体结构，并且可以布置在第一铁磁层和第二铁磁层之间。至少第一铁磁层可以包括与隧道势垒层接触的第一层和与第一层接触的第二层，并且第一层相对于隧道势垒层的取向可以大于相对于隧道势垒层的第二层。

8. 发明授权

US08852960B2 Method of fabricating semiconductor device and apparatus for fabricating the same 有权
标题翻译：制造半导体器件的方法及其制造方法
公开(公告)号：US08852960B2
公开(公告)日：2014-10-07
申请号：US13305377
申请日：2011-11-28
申请人： Woojin Kim , Jangeun Lee , Sechung Oh , Junho Jeong , Heeju Shin
发明人： Woojin Kim , Jangeun Lee , Sechung Oh , Junho Jeong , Heeju Shin
IPC分类号： H01L21/00 , H01L27/22 , C23C16/46 , C23C16/40 , H01L43/10 , C23C16/455 , C23C16/34
CPC分类号： C23C16/345 , C23C16/403 , C23C16/45536 , C23C16/46 , G11C11/161 , H01L27/222 , H01L43/10
摘要： Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes forming a plurality of magnetic memory patterns spaced apart from each other on a substrate, with each of the magnetic memory patterns including a free pattern, a tunnel barrier pattern, and a reference pattern which are stacked on the substrate, performing a magnetic thermal treatment process on the magnetic memory patterns, and forming a passivation layer on the magnetic memory patterns. The magnetic thermal treatment process and the forming of the passivation layer are simultaneously performed in one reactor.
摘要翻译：提供一种制造半导体器件的方法。制造半导体器件的方法包括在衬底上形成彼此间隔开的多个磁存储器图案，其中每个磁存储器图案包括堆叠在基板上的自由图案，隧道势垒图案和参考图案对磁存储器图案执行磁热处理工艺，以及在磁存储器图案上形成钝化层。磁性热处理工艺和钝化层的形成同时在一个反应器中进行。

9. 发明授权

US08692342B2 Magnetic memory devices having a uniform perpendicular nonmagnetic metal rich anisotropy enhanced pattern 有权
标题翻译：磁记忆装置具有均匀的垂直非磁性富金属各向异性增强图案
公开(公告)号：US08692342B2
公开(公告)日：2014-04-08
申请号：US13181957
申请日：2011-07-13
申请人： Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
发明人： Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
IPC分类号： H01L29/82 , H01L43/00 , H01L23/552 , H01L29/34 , H01L29/74 , H01L31/111
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.
摘要翻译：提供了磁存储器件，电子系统和包括其的存储卡，其制造方法以及控制磁性图案的磁化方向的方法。在磁存储器件中，不平行于自由图案的一个表面的原子磁矩在自由图案中增加。因此，可以减小磁存储器件的临界电流密度，使得磁存储器件的功耗被降低或最小化，和/或磁存储器件被改进或优化以达到更高的集成度。

10. 发明申请

US20100328568A1 LIQUID CRYSTAL DISPLAY 有权
标题翻译：液晶显示器
公开(公告)号：US20100328568A1
公开(公告)日：2010-12-30
申请号：US12621888
申请日：2009-11-19
申请人： Kyuheon LEE , Jongki Ahn , Woojin Kim , Daesung Park
发明人： Kyuheon LEE , Jongki Ahn , Woojin Kim , Daesung Park
IPC分类号： G02F1/1333
CPC分类号： G02F1/133308 , G02F2001/133317 , G02F2001/13332 , G02F2001/133328 , G02F2201/465
摘要： A liquid crystal display is provided to improve workability for fastening and reduce production costs. The liquid crystal display includes: a liquid crystal panel; a film member having a source IC for driving the liquid crystal panel mounted therein; a source PCB electrically connected to the liquid crystal panel through the film member; lamps for generating light; a panel guide having a guide space where the source PCB is positioned provided on an upper outer surface thereof; a bottom cover; and a top case having a first frame member surrounding both of the film member and the source PCB and fixing the liquid crystal panel at a portion of the upper side of the liquid crystal panel and a plurality of frame members physically separated from the first frame member and fixing the liquid crystal panel at a portion of the lower side of the liquid crystal panel.
摘要翻译：提供液晶显示器以提高紧固的可操作性并降低生产成本。液晶显示器包括：液晶面板; 具有用于驱动安装在其中的液晶面板的源极IC的膜构件; 源PCB，其经由所述膜构件电连接到所述液晶面板; 发光灯; 面板引导件，其具有位于其上外表面上的源PCB的引导空间; 底盖; 以及顶壳，其具有围绕所述膜构件和所述源PCB两者的第一框架构件，并且将所述液晶面板固定在所述液晶面板的上侧的一部分，以及与所述第一框架构件物理分离的多个框架构件并将液晶面板固定在液晶面板的下侧的一部分。

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