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1. 发明授权

US09424904B2 Magnetic memory devices including oxide multiferroic material 有权
标题翻译：磁记忆装置包括氧化物多铁性材料
公开(公告)号：US09424904B2
公开(公告)日：2016-08-23
申请号：US14526489
申请日：2014-10-28
申请人： Kilho Lee , Sangyong Kim , Woojin Kim , KyungTae Nam
发明人： Kilho Lee , Sangyong Kim , Woojin Kim , KyungTae Nam
IPC分类号： G11C11/02 , G11C11/16 , G11C11/22
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/221
摘要： A magnetic memory device is provided. The magnetic memory device includes a plurality of variable resistance devices connected to a word line, and a plurality of bit lines, each of which provides an electrical pathway between a corresponding one of the variable resistance devices and a read and write circuit. Each of the variable resistance devices includes a free layer and a pinned layer spaced apart from each other and having a tunnel barrier interposed therebetween, an assistant layer spaced apart from the tunnel barrier and having the free layer interposed therebetween, and an exchange coupling layer arranged between the free layer and the assistant layer. The exchange coupling layer has an electric polarization, which results from its ferroelectric property, and having a direction that can be changed by a voltage applied to the corresponding one of the bit lines.
摘要翻译：提供磁存储器件。磁存储器件包括连接到字线的多个可变电阻器件和多个位线，每个位线提供相应的一个可变电阻器件与读写电路之间的电路径。每个可变电阻装置包括自由层和钉扎层，彼此间隔开并具有插入其间的隧道势垒，辅助层与隧道势垒间隔开并且具有插入其间的自由层，并且布置有交换耦合层在自由层和辅助层之间。交换耦合层具有由其铁电性质产生的电极化，并且具有可以通过施加到相应的一个位线的电压而改变的方向。

2. 发明申请

US20120217599A1 MAGNETIC MEMORY DEVICES WITH THIN CONDUCTIVE BRIDGES 有权
标题翻译：具有薄导电桥的磁记忆装置
公开(公告)号：US20120217599A1
公开(公告)日：2012-08-30
申请号：US13469979
申请日：2012-05-11
申请人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
发明人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
IPC分类号： H01L29/82
CPC分类号： H01L43/12
摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
摘要翻译：磁存储器件包括在衬底上的自由层和引导层。绝缘层介于自由层和引导层之间。至少一个导电桥通过绝缘层并电连接自由层和引导层。可以在引导层和绝缘层之间插入扩散阻挡层。该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。还描述了相关的制造方法。

3. 发明授权

US08575667B2 Magnetic memory devices with thin conductive bridges 有权
标题翻译：具有薄导电桥的磁存储器件
公开(公告)号：US08575667B2
公开(公告)日：2013-11-05
申请号：US13469979
申请日：2012-05-11
申请人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
发明人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
IPC分类号： H01L21/02
CPC分类号： H01L43/12
摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
摘要翻译：磁存储器件包括在衬底上的自由层和引导层。绝缘层介于自由层和引导层之间。至少一个导电桥通过绝缘层并电连接自由层和引导层。可以在引导层和绝缘层之间插入扩散阻挡层。该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。还描述了相关的制造方法。

4. 发明申请

US20100041168A1 METHODS OF FABRICATING MAGNETIC MEMORY DEVICES WITH THIN CONDUCTIVE BRIDGES 有权
标题翻译：制造具有薄导电桥的磁记忆体装置的方法
公开(公告)号：US20100041168A1
公开(公告)日：2010-02-18
申请号：US12539747
申请日：2009-08-12
申请人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
发明人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
IPC分类号： H01L43/00
CPC分类号： H01L43/12
摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
摘要翻译：磁存储器件包括在衬底上的自由层和引导层。绝缘层介于自由层和引导层之间。至少一个导电桥通过绝缘层并电连接自由层和引导层。可以在引导层和绝缘层之间插入扩散阻挡层。该装置还可以包括在与绝缘层相对的自由层侧面上具有固定磁化方向的参考层和参考层与自由层之间的隧道势垒。还描述了相关的制造方法。

5. 发明授权

US08722211B2 Magnetic memory devices and methods of manufacturing such magnetic memory devices 有权
标题翻译：磁存储器件和制造这种磁存储器件的方法
公开(公告)号：US08722211B2
公开(公告)日：2014-05-13
申请号：US12656145
申请日：2010-01-19
申请人： Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
发明人： Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
IPC分类号： G11C11/15 , G11B5/39 , G11C11/14 , G01R33/09 , H01F10/10 , H01F10/14 , H01F10/16
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11C11/15 , G11C11/161 , H01F10/10 , H01F10/14 , H01F10/16 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T428/1114
摘要： A magnetic memory device may include a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer arranged on a substrate. The tunnel barrier layer may include a crystal structure and may be arranged between the first ferromagnetic layer and the second ferromagnetic layer. At least the first ferromagnetic layer may include a first layer in contact with the tunnel barrier layer and a second layer in contact with the first layer, and an orientation of the first layer with respect to the tunnel barrier layer may be greater than an orientation of the second layer with respect to the tunnel barrier layer.
摘要翻译：磁存储器件可以包括第一铁磁层，第二铁磁层和布置在衬底上的隧道势垒层。隧道势垒层可以包括晶体结构，并且可以布置在第一铁磁层和第二铁磁层之间。至少第一铁磁层可以包括与隧道势垒层接触的第一层和与第一层接触的第二层，并且第一层相对于隧道势垒层的取向可以大于相对于隧道势垒层的第二层。

6. 发明授权

US08198102B2 Methods of fabricating magnetic memory devices with thin conductive bridges 有权
标题翻译：用薄导电桥制造磁存储器件的方法
公开(公告)号：US08198102B2
公开(公告)日：2012-06-12
申请号：US12539747
申请日：2009-08-12
申请人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
发明人： KyungTae Nam , Jangeun Lee , Sechung Oh , Woojin Kim , Dae Kyom Kim , Junho Jeong
IPC分类号： H01L21/00
CPC分类号： H01L43/12
摘要： A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.
摘要翻译：磁存储器件包括在衬底上的自由层和引导层。绝缘层介于自由层和引导层之间。至少一个导电桥通过绝缘层并电连接自由层和引导层。可以在引导层和绝缘层之间插入扩散阻挡层。该装置还可以包括在与绝缘层相对的自由层的一侧上具有固定的磁化方向的参考层和参考层与自由层之间的隧道势垒。还描述了相关的制造方法。

7. 发明申请

US20100183902A1 Magnetic memory devices and methods of manufacturing such magnetic memory devices 有权
标题翻译：磁存储器件和制造这种磁存储器件的方法
公开(公告)号：US20100183902A1
公开(公告)日：2010-07-22
申请号：US12656145
申请日：2010-01-19
申请人： Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
发明人： Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
IPC分类号： G11B5/39
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11C11/15 , G11C11/161 , H01F10/10 , H01F10/14 , H01F10/16 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T428/1114
摘要： A magnetic memory device may include a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer arranged on a substrate. The tunnel barrier layer may include a crystal structure and may be arranged between the first ferromagnetic layer and the second ferromagnetic layer. At least the first ferromagnetic layer may include a first layer in contact with the tunnel barrier layer and a second layer in contact with the first layer, and an orientation of the first layer with respect to the tunnel barrier layer may be greater than an orientation of the second layer with respect to the tunnel barrier layer.
摘要翻译：磁存储器件可以包括第一铁磁层，第二铁磁层和布置在衬底上的隧道势垒层。隧道势垒层可以包括晶体结构，并且可以布置在第一铁磁层和第二铁磁层之间。至少第一铁磁层可以包括与隧道势垒层接触的第一层和与第一层接触的第二层，并且第一层相对于隧道势垒层的取向可以大于相对于隧道势垒层的第二层。

8. 发明授权

US09934950B2 Sputtering apparatuses and methods of manufacturing a magnetic memory device using the same 有权
公开(公告)号：US09934950B2
公开(公告)日：2018-04-03
申请号：US15202597
申请日：2016-07-06
申请人： Joonmyoung Lee , Woojin Kim
发明人： Joonmyoung Lee , Woojin Kim
IPC分类号： H01J37/34 , C23C14/34 , H01J37/32 , H01L43/08 , H01L43/10 , H01L43/12 , C23C14/08 , C23C14/50
CPC分类号： H01J37/3488 , C23C14/08 , C23C14/3464 , C23C14/505 , H01J37/32715 , H01J37/34 , H01J37/3426 , H01J37/3447 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A sputtering apparatus includes a process chamber in which a sputtering process is performed, a substrate holder provided in the process chamber and fixing a horizontal position of a substrate during the sputtering process, and a first sputter gun provided to be vertically spaced apart from the substrate in the process chamber. The first sputter gun is spaced apart from the substrate by a first horizontal distance during the sputtering process. The first sputter gun is fixed during the sputtering process. The first horizontal distance is a horizontal distance between the substrate and the first sputter gun when viewed from a plan view.

9. 发明授权

US09484529B2 Magnetic memory device 有权
公开(公告)号：US09484529B2
公开(公告)日：2016-11-01
申请号：US15098503
申请日：2016-04-14
申请人： Jangeum Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woochang Lim
发明人： Jangeum Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woochang Lim
IPC分类号： H01L27/22 , H01L43/10 , H01L43/08
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
摘要： A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

10. 发明授权

US09324941B2 Semiconductor devices and methods for fabricating the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US09324941B2
公开(公告)日：2016-04-26
申请号：US14306976
申请日：2014-06-17
申请人： Whankyun Kim , Woojin Kim , Woo Chang Lim
发明人： Whankyun Kim , Woojin Kim , Woo Chang Lim
IPC分类号： H01L21/00 , H01L43/12 , C23C14/35 , H01L43/08 , C23C14/04 , H01J37/34 , H01L27/22
CPC分类号： H01L43/12 , C23C14/046 , C23C14/35 , H01J37/3408 , H01L27/228 , H01L43/08
摘要： A method of fabricating a semiconductor device includes providing a wafer in a chamber of a point-cusp magnetron physical vapor deposition (PCM-PVD) apparatus, the chamber including a metal target. The method further includes providing an inert gas and a reactive gas in the chamber and forming an amorphous conductive layer on the wafer by reacting the reactive gas with a metal atom separated from the metal target by the inert gas.
摘要翻译：制造半导体器件的方法包括在点尖磁控管物理气相沉积（PCM-PVD）设备的腔室中提供晶片，所述腔室包括金属靶。该方法还包括在室中提供惰性气体和反应性气体，并通过使惰性气体与金属靶分离的金属原子反应而在晶片上形成非晶形导电层。

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